BLL6G1214L-250
LDMOS L-band radar power transistor
Rev. 3 — 28 January 2016
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 1 ms;
= 10 %; I
Dq
= 150 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
(GHz)
1.2 to 1.4
V
DS
(V)
36
P
L
(W)
250
G
p
(dB)
15
D
(%)
45
t
r
(ns)
15
t
f
(ns)
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
BLL6G1214L-250
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLL6G1214L-250
-
flanged ceramic package; 2 mounting holes; 2 leads
Version
SOT502A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
89
+11
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Z
th(j-c)
Thermal characteristics
Parameter
thermal resistance from
junction to case
transient thermal impedance
from junction to case
Conditions
T
case
= 85
C;
P
L
= 250 W
T
case
= 85
C;
P
L
= 250 W
t
p
= 1000
s;
= 10 %
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
[1]
[1]
Typ
0.244
Unit
K/W
0.124
0.059
0.077
0.088
0.078
K/W
K/W
K/W
K/W
K/W
Z
th(j-c)
values are calculated from results obtained with ANSYS simulations and confirmed with
IR measurements during development stage. During production: guaranteed by design.
BLL6G1214L-250
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 28 January 2016
2 of 13
BLL6G1214L-250
LDMOS L-band radar power transistor
6. Characteristics
Table 6.
DC Characteristics
T
j
= 25
C
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 20 V; I
D
= 336 mA
V
GS
= 0 V; V
DS
= 42 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 336 mA
Min
91.5
1.4
-
50
-
51.6
-
Typ
-
1.9
-
59
-
-
-
Max
2.4
4.2
-
420
-
127
Unit
V
A
A
nA
mS
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3.36 mA
105.5 V
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 11.7 A
Table 7.
AC Characteristics
T
j
= 25
C
Symbol Parameter
C
iss
C
oss
C
rss
input capacitance
output capacitance
Conditions
V
GS
= 0 V; V
DS
= 40 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 40 V; f = 1 MHz
Min Typ Max Unit
-
-
-
285 -
90
3
-
-
pF
pF
pF
reverse transfer capacitance V
GS
= 0 V; V
DS
= 40 V; f = 1 MHz
Table 8.
RF characteristics
Test signal: pulsed RF; t
p
= 1 ms;
= 10 %; RF performance at V
DS
= 36 V; I
Dq
= 150 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
P
L
f
range
t
p
D
t
r
t
f
G
p
P
droop(pulse)
RL
in
[1]
Parameter
output power
frequency range
pulse duration
drain efficiency
rise time
fall time
power gain
pulse droop power
input return loss
Conditions
Min
250
Typ Max
-
-
-
45
-
-
15
-
-
-
1
100
-
200
200
-
0.6
7
Unit
W
ms
s
%
ns
ns
dB
dB
dB
1200 -
= 10 %
= 20 %
P
L
= 250 W
P
L
= 250 W
[1]
[1]
1400 MHz
-
-
42
-
-
13
-
-
The rise and fall time of the input circuit will be 5 ns maximum.
7. Test information
7.1 Ruggedness in class-AB operation
The BLL6G1214L-250 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 36 V;
I
Dq
= 150 mA; P
L
= 250 W; t
p
= 1 ms;
= 10 %.
BLL6G1214L-250
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 28 January 2016
3 of 13
BLL6G1214L-250
LDMOS L-band radar power transistor
7.2 Impedance information
Table 9.
Typical impedance
Typical values unless otherwise specified.
f
(GHz)
1.2
1.3
1.4
Z
S
()
1.077
j2.78
1.352
j2.949
1.881
j2.640
Z
L
()
1.288
j1.014
1.139
j1.086
1.038
j1.132
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Circuit information
C6
C5
C10
C3
R1
C4
C8
C7
C9
C11
C1
C2
aaa-002265
Printed-Circuit Board (PCB): Duroid 6010;
r
= 10.15; thickness = 0.64 mm;
thickness copper plating = 35
m.
See
Table 10
for a list of components.
Fig 2.
Component layout for application circuit
BLL6G1214L-250
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 28 January 2016
4 of 13
BLL6G1214L-250
LDMOS L-band radar power transistor
Table 10. List of components
For test circuit see
Figure 2.
Component
C1, C2, C3, C4, C7
C5, C8
C6, C9
C10
C11
R1
[1]
[2]
[3]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
resistor
Value
56 pF
200 pF
1 nF
10
F,
20 V
22
F,
63 V
10
[1]
[2]
[3]
Remarks
SMD 0603
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 700A or capacitor of same quality.
7.4 Graphical data
18
G
p
(dB)
12
(2)
(3)
(1)
(3)
aaa-002251
50
η
D
(%)
40
aaa-002252
30
(2)
(1)
20
6
10
0
0
100
200
300
P
L
(W)
400
0
0
100
200
300
P
L
(W)
400
t
p
= 100
s;
= 10 %; T
h
= 25
C.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
t
p
= 100
s;
= 10 %; T
h
= 25
C.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 3.
Power gain as a function of output power;
typical values
Fig 4.
Drain efficiency as a function of output power;
typical values
BLL6G1214L-250
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 28 January 2016
5 of 13
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