BLF6G10L-260PRN;
BLF6G10LS-260PRN
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
260 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
920 to 960
V
DS
(V)
28
P
L(AV)
(W)
40
G
p
(dB)
22.0
D
(%)
26.5
ACPR
(dBc)
39
[1]
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an I
Dq
of 1800 mA:
Average output power = 40 W
Power gain = 22.0 dB
Efficiency = 26.5 %
ACPR =
39
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
BLF6G10L(S)-260PRN
Power LDMOS transistor
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 700 MHz to 1000 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF6G10L-260PRN (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLF6G10LS-260PRN (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
3
1
3
4
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G10L-260PRN
-
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Version
SOT539A
Type number
BLF6G10LS-260PRN -
earless flanged balanced LDMOST ceramic package; SOT539B
4 leads
BLF6G10L-260PRN_LS-260PRN#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 15
BLF6G10L(S)-260PRN
Power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
64
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 40 W
Typ
0.28
Unit
K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; values per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 1.8 mA
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V;
I
D
= 1000 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
Min
65
1.4
1.45
-
24.1
-
7.02
Typ
-
1.9
2.1
-
30
-
12
Max
-
2.4
2.55
2.8
-
280
-
Unit
V
V
V
A
A
nA
S
0.053 0.1
0.165
7. Application information
Table 7.
2-carrier W-CDMA Application information
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1 to 64 DPCH; f
1
= 917.5 MHz; f
2
= 922.5 MHz; f
3
= 957.5 MHz; f
4
= 962.5 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 1800 mA; T
case
= 25
C; unless otherwise specified.
Symbol
P
L(AV)
G
p
Parameter
average output power
power gain
P
L(AV)
= 40 W
Conditions
Min
-
19.8
Typ
40
22.0
Max
-
-
Unit
W
dB
BLF6G10L-260PRN_LS-260PRN#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 15
BLF6G10L(S)-260PRN
Power LDMOS transistor
Table 7.
2-carrier W-CDMA Application information
…continued
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1 to 64 DPCH; f
1
= 917.5 MHz; f
2
= 922.5 MHz; f
3
= 957.5 MHz; f
4
= 962.5 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 1800 mA; T
case
= 25
C; unless otherwise specified.
Symbol
RL
in
D
ACPR
Parameter
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
Min
-
25.0
-
Typ
26.5
39
Max
-
35
Unit
dB
%
dBc
10.0 6.0
Table 8.
1 carrier W-CDMA Application information
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3 GPP test model 1;
1 to 64 DPCH; f
1
= 960 MHz; RF performance at VDS = 28 V; I
dq
1800 mA; T
case
= 25
C; unless
otherwise specified.
Symbol Parameter
PAR
0
output peak-to-average
ratio
Conditions
Min
Typ
4.3
Max
-
Unit
dB
PL(AV) = 125 W at 0.01 % 3.8
probability on CCDF
7.1 Ruggedness in class-AB operation
The BLF6G10L-260PRN and BLF6G10L-260PRN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 1800 mA; P
L
= 260 W (CW); f = 920 MHz to 960 MHz.
7.2 Impedance information
Table 9.
Typical impedance per section
I
Dq
= 950 mA; main transistor V
DS
= 28 V
f
MHz
920
940
960
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
0.7
j1.0
1.1
j1.3
1.0
j1.6
Z
L[1]
1.4 + j0.6
1.2 + j0.5
1.2 + j0.3
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLF6G10L-260PRN_LS-260PRN#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 15
BLF6G10L(S)-260PRN
Power LDMOS transistor
7.3 Typical powersweep
7.3.1 CW
014aab123
G
p
(dB)
23
22
(1)
70
60
η
D
(%)
21
20
19
18
17
16
0
(2)
(3)
(4)
(5)
(6)
50
40
30
20
10
0
400
P
L
(W)
100
200
300
(1) % efficiency at 960 MHz
(2) % efficiency at 940 MHz
(3) % efficiency at 920 MHz
(4) dB gain at 940 MHz
(5) dB gain at 920 MHz
(6) dB gain at 960 MHz
Fig 2.
Typical continuous wave 1 (gain; efficiency versus P
O
)
24
RL
in
(dB)
20
(1)
014aab126
16
(2)
12
(3)
8
0
50
100
150
200
250
300
P
L
(W)
350
(1) dB return loss at 940 MHz
(2) dB return loss at 920 MHz
(3) dB return loss at 960 MHz
Fig 3.
BLF6G10L-260PRN_LS-260PRN#3
Typical continuous wave 2 (return loss versus P
O
)
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 15
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
