LITE-ON TECHNOLOGY CORPORATION.
Property of Lite-On Only
FEATURES
* SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES
* LOW COST MINIATURE PLASTIC SIDE LOOKING PACKAGE
* MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-5886DHP4-M SERIES OF
PHOTOTRANSISTOR
PACKAGE DIMENSIONS
NOTES:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0.25mm(.010")
unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
Part No. : LTE-329P4-M DATA SHEET (FOR KINPO ONLY)
BNS-OD-C131/A4
Page :
1
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LITE-ON TECHNOLOGY CORPORATION.
Property of Lite-On Only
ABSOLUTE MAXIMUM RATINGS AT T
A
=25
℃
PARAMETER
Power Dissipation
Peak Forward Current (300pps, 10μs pulse)
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm(.063") From Body]
MAXIMUM RATING
75
1
50
5
-10℃ to + 50℃
-40℃ to + 70℃
260℃ for 5 Seconds
UNIT
mW
A
mA
V
Part No. : LTE-329P4-M DATA SHEET (FOR KINPO ONLY)
BNS-OD-C131/A4
Page :
2
of
4
LITE-ON TECHNOLOGY CORPORATION.
Property of Lite-On Only
ELECTRICAL / OPTICAL CHARACTERISTICS AT T
A
=25
℃
PARAMETER
Peak Emission Wavelength
Spectral Line Half-Width
Forward Voltage
Reverse Current
Axis Intensity (Light Current)
Setting of LITE-ON
Production
(Average Light
SYMBOL MIN.
λ
P
Δλ
V
F
I
R
0.605
(I
L
)
0.945
0.550
(I
L
)
0.787
2θ
1/2
R
0.8
930
TYP.
940
50
1.2
MAX.
970
UNIT
nm
nm
TEST
BIN
CONDITION. No.
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
V
R
= 5V
BINA
1.5
10
0.945
V
μA
mA
1.30
1.050
mA
1.560
40
1.0
1.2
deg.
Current of 2
Phototransister,(I
L1
+I
L2
)/2)
Axis Intensity (Light Current)
Setting of LITE-ON Q.C
I
F
= 4mA
Vcc=3.5V
BINB
BINA
BINB
(Average Light Current of 2
Phototransister,(I
L1
+I
L2
)/2)
Viewing Angle (See FIG.6)
Axis Intensity Ratio(I
L1
/I
L2
)
I
F
= 4mA
Vcc=3.5V
INFRARED AXIS INTENSITY TEST METHOD
Part No. : LTE-329P4-M DATA SHEET (FOR KINPO ONLY)
BNS-OD-C131/A4
Page :
3
of
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LITE-ON TECHNOLOGY CORPORATION.
Property of Lite-On Only
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
(25℃ Ambient Temperature Unless Otherwise Noted)
1.0
Relative Radiant Intensity
Forward Current IF (mA)
60
50
40
30
20
10
0
940
Wavelength (nm)
1040
-40 -20 0
20 40 60 80 100
Ambient Temperature Ta (
o
C)
0.5
0
840
FIG.1 SPECTRAL DISTRIBUTION
10
Forward Current (A)
-1
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
1.2
Output Power Relative To
Value at IF=20mA
MIN.
MAX.
1.0
0.8
0.6
0.4
0.2
0
-20
0
20
40
60
o
10
-2
10
-3
10
-4
0 0.2
0.6
1.0
1.4
80
Forward Voltage (V)
Ambient Temperature Ta ( C)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
5.0
Output Power Relative To
Value at IF=20mA
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
0
Relative Radiant Intensity
o
10
o
20
o
o
30
4.0
3.0
2.0
1.0
0
0
20
40
60
80
100
40
1.0
0.9
0.8
0.7
50
60
o
o
o
70
o
80
o
90
0.5 0.3 0.1
0.2 0.4 0.6
o
Foward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
FIG.6 RADIATION DIAGRAM
Part No. : LTE-329P4-M DATA SHEET (FOR KINPO ONLY)
BNS-OD-C131/A4
Page :
4
of
4
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