LITE-ON
SEMICONDUCTOR
STPR2010CT thru 2060CT
REVERSE VOLTAGE
- 100
to
600
Volts
FORWARD CURRENT
- 20
Amperes
SUPER FAST
GLASS PASSIVATED RECTIFIERS
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
B
C
K
PIN
1
2
3
TO-220AB
L
M
D
A
E
TO-220AB
MAX.
MIN.
DIM.
14.22
15.88
A
10.67
B
9.65
3.43
C
2.54
D
6.86
5.84
9.28
8.26
E
6.35
F
-
14.73
12.70
G
H
I
J
K
L
M
2.29
0.51
0.30
3.53
3.56
2.79
1.14
0.64
4.09
4.83
F
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
I
J
N
H H
PIN 1
PIN 3
G
PIN 2
CASE
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
STPR
2010CT
100
70
100
STPR
2020CT
200
140
200
STPR
2030CT
300
210
300
20
125
1.1
1.0
1.25
1.20
1.3
1.2
1.5
1.4
10
500
100
30
35
1.5
50
1.5
1.4
1.7
1.6
STPR
2040CT
400
280
400
STPR
2050CT
500
350
500
STPR
2060CT
600
420
600
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
C
=
95
℃
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
I
FSM
A
I
F
=10A@T
J
=25
℃
Maximum forward Voltage at
I
F
=10A@T
J
=125
℃
Pulse width =300us
I
F
=20A@T
J
=25
℃
2% Duty cycle
I
F
=20A@T
J
=125
℃
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
V
F
V
@T
J
=25
℃
@T
J
=100
℃
I
R
C
J
T
RR
R
θ
JC
uA
pF
ns
℃
/W
Operating and Storage Temperature Range
T
J
,T
STG
-55 to +150
℃
REV.0, Dec-2003, KTGC13
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,I
RR
0.25A.
3.Thermal Resistance Junction to Case.
RATING AND CHARACTERISTIC CURVES
STPR2010CT thru STPR2060CT
AVERAGE FORWARD CURRENT
AMPERES
20
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
15
10
5
RESISTIVE OR INDUCTIVE LOAD
Single Half-Sine-Wave
(JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
200
180
VB@
300~400V
INSTANTANEOUS
REVERSE CURRENT ,(uA)
100
T
J
= 125 C
PERCENT OF FORWARD CURRE
(%)
160
140
120
100
80
60
40
20
0
VB@
100~200V
VB@
500~600V
10
T
J
= 100 C
1.0
0.1
T
J
= 25 C
.01
0
20
60
100
120
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
= 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 0, Dec-2003, KTGC13
Microchip MCU
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