LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Features
* Meet ROHS, Green Product.
* Super Thin (0.55H mm) Chip LED.
* Ultra Bright AlInGaP Chip LED.
* Package In 8mm Tape On 7" Diameter Reels.
* EIA STD package.
* I.C. compatible.
* Compatible With Automatic Placement Equipment.
* Compatible With Infrared And Vapor Phase Reflow Solder Process.
Package
Dimensions
Part No.
LTST-C191KSKT-5A
Notes:
1. All dimensions are in millimeters (inches).
Lens
Water Clear
Source Color
AllnGaP Yellow
2. Tolerance is ± 0.10 mm (.004") unless otherwise noted.
Part
No. : LTST-C191KSKT-5A
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1
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Absolute
Maximum
Ratings
At
Ta=25
℃
LTST-C191KSKT-5A
75
Parameter
Power Dissipation
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
DC Forward Current
Derating Linear From 50°C
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Wave Soldering Condition
Infrared Soldering Condition
Vapor Phase Soldering Condition
Unit
mW
80
mA
30
0.4
5
-55°C to + 85°C
-55°C to + 85°C
260°C For 5 Seconds
260°C For 5 Seconds
215°C For 3 Minutes
mA
mA/°C
V
Part
No. : LTST-C191KSKT-5A
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2
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Suggestion Profile:
(1) Suggestion IR Reflow Profile For Normal Process
(2) Suggestion IR Reflow Profile For Pb Free Process
R e c o m m e n d e d P r o file B e t w e e n A s s e m b le A n d H e a t-R e s is t a n c e L in e
T h e P r o file is a v a ila b le th a t m u s t to u s e S n A g
Cu
s o ld e r p a s t e
Part
No. : LTST-C191KSKT-5A
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3
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Electrical
Optical
Characteristics
Symbol
At
Ta=25
℃
Min.
Typ.
Max.
Unit
Test Condition
IF = 5mA
Note 1
Parameter
Part No.
LTST-
Luminous Intensity
IV
C191KSKT-5A
11.2
-
45.0
mcd
Viewing Angle
2θ1/2
C191KSKT-5A
130
deg
Note 2 (Fig.6)
Peak Emission Wavelength
λP
C191KSKT-5A
588
nm
Measurement
@Peak (Fig.1)
IF = 5mA
Note 3
Dominant Wavelength
λd
C191KSKT-5A
587.0
-
594.5
nm
Spectral Line Half-Width
Δλ
C191KSKT-5A
15
nm
Forward Voltage
VF
C191KSKT-5A
1.70
2.00
2.30
V
IF = 5mA
Reverse Current
IR
C191KSKT-5A
10
μA
VR = 5V
Capacitance
C
C191KSKT-5A
40
PF
VF = 0
f = 1MHZ
Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the
CIE eye-response curve.
2.
θ1/2
is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength,
λd
is derived from the CIE chromaticity diagram and represents the
single wavelength which defines the color of the device.
Part
No. : LTST-C191KSKT-5A
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Bin Code List
Forward Voltage
Bin Code
E2
E3
E4
Min.
1.70
1.90
2.10
Unit: V @5mA
Max.
1.90
2.10
2.30
Tolerance on each Forward Voltage bin is +/-0.1 volt
Luminous Intensity
Bin Code
L
M
N
Min.
11.2
18.0
28.0
Tolerance on each Intensity bin is +/-15%
Dominant Wavelength
Bin Code
J
K
L
Min.
587.0
589.5
592.0
Unit : nm @5mA
Max.
589.5
592.0
594.5
Unit : mcd @5mA
Max.
18.0
28.0
45.0
Tolerance for each Dominate Wavelength bin is +/- 1nm
Part
No. : LTST-C191KSKT-5A
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BNS-OD-C131/A4
Microchip MCU
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