SSF8N60
600V N-Channel MOSFET
FEATURES
■
■
■
■
■
■
■
Extremely high dv/dt capability
Low Gate Charge Qg results in Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Lead free product
VDSS = 600V
ID = 8A
Rdson = 0.85Ω (typ.)
DESCRIPTION
The SSF8N60 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and is
obtained through an extreme optimization layout design, in
additional to pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability, provide
superior switching performance, withstand high energy pulse in
the avalanche, and increases packing density.
APPLICATIONS
■
■
SSF8N60 TOP View (TO220)
High current, high speed switching
Ideal for off-line power supply, adaptor, PFC
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C
ID@Tc=100ْC
IDM
PD@TC=25ْC
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-case
Case-to-Sink,Flat,Greased Surface
Junction-to-Ambient
Min.
—
—
—
Typ.
—
0.50
—
Max.
0.86
—
62.5
ْC/W
Units
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
①
Power Dissipation
Linear derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Operating Junction and
Storage Temperature Range
Max.
8.2
5.5
32.8
145
0.8
±30
586
4
15
4.5
–55 to +150
W
W/ْ C
V
mJ
A
mJ
V/ns
ْC
A
Units
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Page 1 of 7
Rev.2.1
SSF8N60
600V N-Channel MOSFET
Electrical Characteristics @T
J
=25 ْC (unless otherwise specified)
Parameter
V(BR)DSS
△
V(BR)DSS/
△
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp.Coefficient
Static Drain-to-Source On-resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage current
Gate-to-Source Forward leakage
Gate-to-Source Reverse leakage
Total Gate Charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
600
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.6
0.85
—
6.4
—
—
—
—
28.5
7
14.6
29
78
65
60
1000
125
16
Max. Units
—
—
1.1
4.0
—
1
10
0.5
-0.5
15
—
—
70
160
130
128
1350
165
21
pF
nS
nC
V
V/ْC
Ω
V
S
uA
uA
Test Conditions
VGS=0V,ID=250μA
Reference to 25ْC,ID=250μA
VGS=10V,ID=3.8A
④
VDS=VGS,ID=250μA
VDS=40V,ID=3.8A
VDS=600V,VGS=0V
VDS=480V,VGS=0V,TJ=150ْC
VGS=30V
VGS=-30V
ID=7.5A
VDS=480V
VGS=10V
VDD=300V
ID=7.5A
RG=25Ω
VGS=0V
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
VSD
Trr
Qrr
Notes:
①
Repetitive rating; pulse width limited by maximum. junction temperature
②
L = 23.5mH, IAS =6.5A, VDD = 50V, RG = 25ΩStarting, TJ = 25°C
③
ISD≤4A, di/dt≤200A/μs, VDD≤V(BR)DSS, TJ≤25°C
④
Pulse width≤300μS; duty cycle≤2%
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
—
—
—
—
Typ.
—
—
—
300
1.8
Max.
8.2
A
32.8
1.3
—
V
nS
uC
Units
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ=25ْC,IS=7.2A,VGS=0V
④
TJ=25ْC,IF=7.2A
di/dt=100A/μs
④
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Page 2 of 7
Rev.2.1
SSF8N60
600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1 On-Region Characteristics
Figure 2 Transfer Characteristics
Figure 3 On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4 Body diode forward Voltage Variation
vs. Source Current and temperature
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Page 3 of 7
Rev.2.1
SSF8N60
600V N-Channel MOSFET
Figure 5 Capacitance Characteristics
Typical Performance Characteristics
Figure 6 Gate Charge Characteristics
Figure 7 Breakdown Voltage Variation
vs. Temperature
Figure 8 On-Resistance Variation
vs. Temperature
Figure 9 Maximum Safe Operation Area
Figure 10 Maximum Drain Current vs.
Case Temperature
Figure 12 Transient Thermal Response Curve
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Page 4 of 7
Rev.2.1
SSF8N60
600V N-Channel MOSFET
Test Circuit and Waveform
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
Unclamped Inductive Switching Test Circuit & Waveform
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Page 5 of 7
Rev.2.1
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