2Gb DDR3 SDRAM B-Die
NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP
NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP
Feature
1.5V ± 0.075V /
1.35V -0.0675V/+0.1V
(JEDEC
Write Leveling
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
RoHS compliance and Halogen free
Packages:
Standard Power Supply)
8 Internal memory banks (BA0- BA2)
Differential clock input (CK,
)
Programmable
Latency: 6, 7, 8, 9, 10, 11
Programmable Additive Latency: 0, CL-1, CL-2
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
8 bit prefetch architecture
Output Driver Impedance Control
78-Ball BGA for x4 & x8 components
96-Ball BGA for x16 components
Description
The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing
2,147,483,648 bits. It is internally configured as an octal-bank DRAM.
The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank, 32Mbit x 8 I/O x 8 bank or 16Mbit x 16 I/O x 8 bank device. These
synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks
(CK rising and
falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source
synchronous fashion.
These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA
packages.
1
REV 1.1
08 / 2010
2Gb DDR3 SDRAM B-Die
NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP
NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP
Input / Output Functional Description
Symbol
Type
Function
Clock:
CK and
are differential clock inputs. All address and control input signals are sampled on
CK,
Input
the crossing of the positive edge of CK and negative edge of
.
Clock Enable:
CKE high activates, and CKE low deactivates, internal clock signals and device input
buffers and output drivers. Taking CKE low provides Precharge Power-Down and Self-Refresh
operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for
power down entry and exit and for Self-Refresh entry. CKE is asynchronous for Self-Refresh exit.
CKE
Input
After V
REF
has become stable during the power on and initialization sequence, it must be maintained
for proper operation of the CKE receiver. For proper self-refresh entry and exit, V
REF
must maintain
to this input. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK,
,
ODT and CKE are disabled during Power Down. Input buffers, excluding CKE, are
disabled during Self-Refresh.
Chip Select:
All commands are masked when
is registered high.
provides for external rank
Input
selection on systems with multiple memory ranks.
, ,
Input
is considered part of the command code.
Command Inputs:
,
and
(along with
)
define the command being entered.
Input Data Mask:
DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH coincident with that input data during a Write access. DM is sampled on both edges
DM, (DMU, DML)
Input
of DQS. For x8 device, the function of DM or TDQS /
is enabled by Mode Register A11 setting
in MR1
Bank Address Inputs:
BA0, BA1, and BA2 define to which bank an Active, Read, Write or
BA0 - BA2
Input
Precharge command is being applied. Bank address also determines which mode register is to be
accessed during a MRS cycle.
Address Inputs:
Provide the row address for Activate commands and the column address for
Read/Write commands to select one location out of the memory array in the respective bank.
A0 – A14
Input
(A10/AP and A12/ have additional function as below. The address inputs also provide the op-code
during Mode Register Set commands.
Burst Chop:
A12/ is sampled during Read and Write commands to determine if burst chop (on
A12 /
DQ
DQL,
Input
the fly) will be performed. (HIGH - no burst chop; LOW - burst chopped).
Input/output
Data Inputs/Output:
Bi-directional data bus.
Data Strobe:
output with read data, input with write data. Edge aligned with read data, centered
with write data. The data strobes DQS, DQSL, DQSU are paired with differential signals
, ,
DQU,
,
respectively, to provide differential pair signaling to the system during both reads and writes.
DQS,(),
DQSL,(),
DQSU,(),
Input/output
DDR3 SDRAM supports differential data strobe only and does not support single-ended.
5
REV 1.1
08 / 2010
嵌入式系统
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