LT9435AC
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The LT9435AC is the P-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology.
This high density process is especially tailored to minimize on-state
resistance.
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and lower power loss that are needed in a
FEATURES
1.
2.
R
DS(ON)
≦40m
Ω@V
GS
=-10V
R
DS(ON)
≦60m
Ω@V
GS
=-4.5V
PIN CONFIGURATION
(SOP-8)
Top View
Ordering Information:
LT9435AC (Pb-free)
Absolute Maximum Ratings
(T
A
=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
Operating Junction Temperature
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
V
DSS
V
GSS
T
A
=25℃
I
D
I
DM
T
A
=25℃
P
D
T
J
R
θJC
10 secs
Steady State
-30
±20
-5.3
-20
2.5
Unit
V
V
A
A
W
℃
℃/W
-55 to 150
28
T≦10 sec
34
62
R
θJA
Steady State
℃/W
Rev.1, Nov. 2010
01
LT9435AC
30V P-Channel Enhancement Mode MOSFET
Electrical Characteristics
(T
A
=25℃ Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
DYNAMIC
Rg
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
tr
t
d(off)
t
f
Gate resistance
Input capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
=-15V, R
L
=15Ω
I
D
=-1A, V
GEN
=-10V
R
G
=6Ω
V
DS
=-15V, V
GS
=-10V,
I
D
=-5.3A
V
DS
=-15V, V
GS
=0V, f=1.0MHz
V
DS
=0V, V
GS
=0V, f=1MHz
5.5
840
120
35
21
6
5.4
32
13
58
6
40
16
75
9
ns
25
nC
960
pF
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
a
Parameter
Limit
V
GS
=0V, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
DS
=0V, V
GS
=±20V
V
DS
=-24 V
GS
=0V
V
GS
=-10V, I
D
= -5.3A
V
GS
=-4.5V, I
D
= -4.2A
Min Typ
-30
-1.0
-2.2
Max
Unit
V
-3.0
±100
-1
V
nA
μA
mΩ
31
40
40
60
Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing
Rev.1, Nov. 2010
02
LT9435AC
30V P-Channel Enhancement Mode MOSFET
Typical Characteristics (T
J
=25℃ Noted)
℃
Rev.1, Nov. 2010
03
LT9435AC
30V P-Channel Enhancement Mode MOSFET
Typical Characteristics (T
J
=25℃ Noted)
℃
Rev.1, Nov. 2010
04
LT9435AC
30V P-Channel Enhancement Mode MOSFET
SOP-8 Package Outline
NOTES:
1. PKG ALL SURFACES ARE Ra0.8-1.2um.
2. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both sides).
Rev.1, Nov. 2010
05
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