60V P-Channel MOSFET
Description
The SSFA6035 uses advanced trench
technology to provide excellent R
DS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
D
SSFA6035
Features
●
Schematic
Diagram
S
●
●
●
V
DS
=- 60V,I
D
=-10A
R
DS(ON)
< 40mΩ @ V
GS
=-10V
R
DS(ON)
< 55mΩ @ V
GS
=-4.5V
High Power and Current Handling Capability
Lead Free
Surface Mount Package
Marking and
Pin
Assignment
Applications
●
●
●
PWM Applications
Load Switch
Power Management
TO-263 (D
2
PAK)
Package Marking
Device Marking
SSFA6035
Device
SSFA6035
Device Package
TO-263(D
2
PAK)
Absolute
Maximum Ratings
(T
A
=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
I
D
(25
°C
)
I
D
(70
°C
)
I
DM
P
D
T
J
,T
STG
Limit
-60
±20
-26
-20
-60
60
-55 to 150
Unit
V
V
A
A
A
W
°C
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal
Characteristics
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
41
°C/W
1/4
60V P-Channel MOSFET
Electrical
Characteristics
(T
A
=25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
= -1A
V
GS
=0V,I
S
-0.72
-1
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
I
F
=-20A, dI/dt=100A/µs
V
DS
=-30V,I
D
=-20A,V
GS
=-10V
V
DS
=-30V,V
GS
=-10V,R
GEN
=3Ω
I
D
=1A
14
22
40
20
50
12
10
40
50
nS
nS
nS
nS
nC
nC
nC
nS
nC
C
lss
C
oss
C
rss
V
DS
=-30V,V
GS
=0V,
F=1.0MHz
3300
500
250
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
-20A
=
V
GS
=-4.5V, I
D
-20A
=
V
DS
=-5V,I
D
-20A
=
20
-1.2
-1.8
32
43
-2.4
40
55
V
mΩ
mΩ
S
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-48V,V
GS
0V
=
V
GS
=±20V,V
DS
0V
=
-60
-1
±100
V
μA
nA
SSFA6035
Symbol
Condition
Min
Typ
Max
Unit
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on 1in
2
FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
Notes:
2/4
60V P-Channel MOSFET
Typical
Electrical and Thermal Characteristics
t
d(on)
t
on
t
r
90%
SSFA6035
t
d(off)
t
off
t
f
90%
10%
90%
V
OUT
V
IN
10%
INVERTED
10%
50%
50%
PULSE WIDTH
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
Z
thJA
Normalized Transient
Thermal Resistance
Figure 3. Normalized Maximum Transient Thermal Impedance
vs
Square Wave
Pluse Duration
3/4
嵌入式系统
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