P
MBR20H200CT \ MBR20H200FCT \ MBR20H200DC SERIES
ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
Voltage
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Low power loss, high efficiency.
High current capability
High junction temperature capability
Lead free in compliance with EU RoHS 2011/65/EU directive
200~250 V
Current
20 A
TO-220AB
ITO-220AB
Mechanical Data
Case: TO-220AB, ITO-220AB,TO-263 package
Terminals: solder plated, solderable per MIL-STD-750,Method 2026
TO-220AB Weight: 0.067 ounces, 1.89 grams.
ITO-220AB Weight: 0.056 ounces, 1.6 grams.
TO-263 Weight: 0.051 ounces, 1.46 grams.
Marking: Part number
200V
TO-220AB
TO-263
ITO-220AB
MBR20H200CT
MBR20H200DC
MBR20H200FCT
250V
MBR20H250CT
MBR20H250DC
MBR20H250FCT
TO-263
Maximum Ratings And Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified per device
current
per diode
Peak forward surge current : 8.3ms single half sine-
wave superimposed on rated load per diode
Maximum forward voltage at 10A per diode
Maximum dc reverse current
at rated dc blocking voltage
T
J
=25
o
C
T
J
=125
o
C
TO-220AB(Note 1)
Typical thermal resistance
TO-263(Note 1)
ITO-220AB(Note 1)
Operating junction temperature range
Storage temperature range
Note : 1. Device mounted on a infinite heatsink
T
J
T
STG
R
JC
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
V
F
I
R
200V
200
140
200
20
10
200
0.9
0.55
2
3
3
7
-55 to +175
-55 to +175
o
o
o
o
250V
250
175
250
UNIT
V
V
V
A
A
V
A
mA
C/W
C
C
November 19,2014-REV.02
Page 1
P
MBR20H200CT \ MBR20H200FCT \ MBR20H200DC SERIES
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
per diode
C
J
, Junction Capacitance (pF)
I
F
, Forward Current (A)
1000
100
10
per diode
1
1
10
100
T
C
, Case Temperature (°C)
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
1000
100
10
T
J
= 125°C
1
0.1
0.01
T
J
= 25°C
0.001
10
20
30
40
50
60
70
80
90 100
T
J
= 75°C
per diode
Fig.2 Typical Junction Capacitance
I
R
, Reverse Current (μA)
I
F
, Forward Current (A)
T
J
= 150°C
100
10
T
J
= 150°C
1
T
J
= 125°C
T
J
= 75°C
T
J
= 25°C
per diode
0.1
0.01
0
0.2
0.4
0.6
0.8
1
Percent of Rated Peak Reverse Voltage (%)
V
F
, Forward Voltage (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
November 19,2014-REV.02
Page 2
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