MMBZ5221B - MMBZ5262B
350mW SURFACE MOUNT ZENER DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
Planar Die Construction
350mW Power Dissipation on FR-4 PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly
Processes
SOT-23
Dim
A
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
A
B
B
C
C
D
E
G
H
J
Mechanical Data
TOP VIEW
•
•
•
•
•
•
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Marking Code (See Table on Page 2)
Weight: 0.008 grams (approx.)
Mounting Position: Any
E
D
G
H
K
J
L
M
K
L
M
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
@ I
F
= 10mA
V
F
P
d
R
θJA
T
j,
T
STG
Value
0.9
350
357
-65 to +150
Unit
V
mW
K/W
°C
Characteristic
Zener Current (See Table on page 2)
Forward Voltage
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, T
p
£
1.0ms.
DS18011 Rev. D
1 of 3
MMBZ5221B - MMBZ5262B
Electrical Characteristics
Type
Number
Marking
Code /
Alternate
Code
KC1
KC2
KC3
KC5
KG1/8A
KG2/8B
KG3/8C
KG4/8D
KG5/8E
KE1/8F
KE2/8G
KE4/8J
KE5/8K
KF1/8L
KF2/8M
KF4/8P
KF5/8Q
KH1/8R
KH2/8S
KH3/8T
KH5/8V
KJ1/8W
KJ3/8Y
KJ5/81A
KK1/81B
KK2/81C
KK4/81E
KK5/81F
KM1/81G
KM2/81H
KM3
KM4
KM5
KN1
KN2
@ T
A
= 25°C unless otherwise specified
Test
Current
I
ZT
Max (V)
2.52
2.63
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
29.40
31.50
34.65
37.80
40.95
45.15
49.35
53.55
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7.0
6.2
5.6
5.2
5.0
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
30
30
30
30
28
24
23
22
19
17
11
7.0
5.0
6.0
8.0
10
17
22
30
13
16
17
21
25
29
33
41
44
49
58
70
80
93
105
125
Maximum Zener
Impedance
Z
ZT @
I
ZT
W
1200
1250
1300
1600
1600
1700
1900
2000
1900
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
Z
ZK
@ I
ZK
= 0.25mA
Maximum Reverse
Leakage Current
I
R
mA
100
100
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
@ V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
5.0
6.0
6.5
7.0
8.0
8.4
9.1
9.9
11
12
14
15
17
18
21
21
23
25
27
30
33
36
39
Zener Voltage Range (Note 2)
V
Z
@ I
ZT
Nom (V)
Min (V)
2.28
2.38
2.57
2.85
3.14
3.42
3.71
4.09
4.4 7
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
26.60
28.50
31.35
34.20
37.05
40.85
44.65
48.45
MMBZ5221B
MMBZ5222B
MMBZ5223B
MMBZ5225B
MMBZ5226B
MMBZ5227B
MMBZ5228B
MMBZ5229B
MMBZ5230B
MMBZ5231B
MMBZ5232B
MMBZ5234B
MMBZ5235B
MMBZ5236B
MMBZ5237B
MMBZ5239B
MMBZ5240B
MMBZ5241B
MMBZ5242B
MMBZ5243B
MMBZ5245B
MMBZ5246B
MMBZ5248B
MMBZ5250B
MMBZ5251B
MMBZ5252B
MMBZ5254B
MMBZ5255B
MMBZ5256B
MMBZ5257B
MMBZ5258B
MMBZ5259B
MMBZ5260B
MMBZ5261B
MMBZ5262B
Notes:
2.4
2.5
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
30
33
36
39
43
47
51
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, T
p
£
1.0ms.
DS18011 Rev. D
2 of 3
MMBZ5221B - MMBZ5262B
1000
0.4
0.3
C
J
, JUNCTION CAPACITANCE (pF)
P
D
, POWER DISSIPATION (W)
0V BIAS
100
0.2
10
0.1
0
0
25
50
75
100
125
150
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 2 Typical Capacitance
100
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs Ambient Temperature
1000
100
DYNAMIC ZENER IMPEDANCE (
Ω
)
I
Z
= 1.0mA
100
P
PK
, PEAK SURGE POWER (W)
10
10
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 3 Zener Voltage vs. Zener Impedence
100
1
1
10
100
1000
PULSE WIDTH (ms)
Fig. 4 Maximum Non-repetitive Surge Power
DS18011 Rev. D
3 of 3
MMBZ5221B - MMBZ5262B
详细参数
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