ZPD1 thru ZPD75
Zener Diodes
Zener Voltage Range: 1.0, 2.7 to 75 Volts
Power Dissipation: 500mW
Features
Silicon Planar Zener Diodes.
The Zener voltages are graded according to the international
E 12 standard. Offered with either 5% or 2% tolerance. Smaller
voltage tolerances and other Zener voltages are available upon
request.
These diodes are also available in MiniMELF case with the type
designation ZMM1 ... ZMM75.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
Parameter
Zener current (see Table "Characteristics")
Power dissipation at T
amb
=25
o
C
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
P
tot
R
θ
JA
T
j
T
S
500
0.3
(1)
Symbol
Value
Unit
mW
o
(2)
C/mW
o
175
-55 to +175
C
C
o
Notes:
1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
2. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
525
Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
Temperature coefficient
of z ener voltage at I
Z
=5mA
α
vz (10
-4
/
o
C)
Type
number
add suffix SB14686
for
+
2% tol.
ZPD1
(3)
Dynamic resistance
at I
Z
=5mA
f=1kHz
Ω
r
z j
(Ω)
6.5 (< 8)
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135
< 150
< 200
< 250
(4)
(4)
(4)
(4)
at I
Z
=1mA
f=1kHz
Ω
r
z j
(Ω)
< 50
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000
< 1000
< 1000
< 1500
(5)
(5)
(5)
(5)
Min.
-26
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
+2
+3
+4
+5
+5
+5
+6
+7
+7
+8
+8
+8
+8
+8
+8
+8
+8
+8
+10
+10
+10
+10
typ. +10
typ. +10
typ. +10
typ. +10
(4)
(4)
(4)
(4)
Max.
-23
-4
-3
-3
-3
-3
-1
+2
+4
+6
+7
+7
+7
+7
+8
+8
+9
+9
+9
+9
+9.5
+9.5
+10
+10
+10
+10
+10
+10
+10
+12
+12
+12
+12
Reverse
voltage
at I
R
=100
nA
V
R
(Volts)
-
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
Admissible z ener current
(2)
at
T
amb
=45
o
C
I
Z
(mA)
280
135
117
109
101
92
85
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
at
T
amb
=25
o
C
I
Z
(mA)
340
160
140
130
120
110
100
90
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
-
-
-
-
ZPD2.7
ZPD3
ZPD3.3
ZPD3.6
ZPD3.9
ZPD4.3
ZPD4.7
ZPD5.1
ZPD5.6
ZPD6.2
ZPD6.8
ZPD7.5
ZPD8.2
ZPD9.1
ZPD10
ZPD11
ZPD12
ZPD13
ZPD15
ZPD16
ZPD18
ZPD20
ZPD22
ZPD24
ZPD27
ZPD30
ZPD33
ZPD36
ZPD39
ZPD43
ZPD47
ZPD51
ZPD56
ZPD62
ZPD68
ZPD75
Notes:
1. Tested with pulses t
p
=5 ms.
2. Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
3. The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be "F" instead of "Z". Connect the cathode
terminal to the negative pole
4. at I
Z
=2.5 mA
5. at I
Z
=0.5 mA
526
Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
Zener voltage
range
(1)
at I
Z
V
Z
(Volts)
Min.
0.70
2.50
2.80
3.10
3.40
3.70
4.00
4.40
4.80
5.20
5.80
6.40
7.00
7.70
8.50
9.40
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
Max.
0.80
2.90
3.20
3.50
3.80
4.10
4.60
5.00
5.40
6.00
6.60
7.20
7.90
8.70
9.60
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
Test current
I
Z
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
Zener voltage
range
(1)
at I
Z
V
Z
(Volts)
Min.
-
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
Max.
-
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
Test current
I
Z
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
Type
number
+
5% Tol.
ZPD1
(3)
Type
number
add suffix SB14686
+
2% Tol.
ZPD1
(3)
ZPD2.7
ZPD3
ZPD3.3
ZPD3.6
ZPD3.9
ZPD4.3
ZPD4.7
ZPD5.1
ZPD5.6
ZPD6.2
ZPD6.8
ZPD7.5
ZPD8.2
ZPD9.1
ZPD10
ZPD11
ZPD12
ZPD13
ZPD15
ZPD16
ZPD18
ZPD20
ZPD22
ZPD24
ZPD27
ZPD30
ZPD33
ZPD36
ZPD39
ZPD43
ZPD47
ZPD51
ZPD56
ZPD62
ZPD68
ZPD75
Notes:
ZPD2.7
ZPD3
ZPD3.3
ZPD3.6
ZPD3.9
ZPD4.3
ZPD4.7
ZPD5.1
ZPD5.6
ZPD6.2
ZPD6.8
ZPD7.5
ZPD8.2
ZPD9.1
ZPD10
ZPD11
ZPD12
ZPD13
ZPD15
ZPD16
ZPD18
ZPD20
ZPD22
ZPD24
ZPD27
ZPD30
ZPD33
ZPD36
ZPD39
ZPD43
ZPD47
ZPD51
ZPD56
ZPD62
ZPD68
ZPD75
1. Measured with pulses t
p
=5 ms
3. The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be "F" instead of "Z". Connect the cathode
terminal to the negative pole
527
RATINGS AND CHARACTERISTIC CURVES
(T
A
= 25
o
C unless otherwise noted)
528
RATINGS AND CHARACTERISTIC CURVES
(T
A
= 25
o
C unless otherwise noted)
529
FPGA/CPLD
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