SMD LED
Product Data Sheet
LTST-C950TGKT
Spec No.: DS22-2015-0165
Effective Date: 01/13/2016
Revision: -
LITE-ON DCC
RELEASE
BNS-OD-FC001/A4
LITE-ON Technology Corp. / Optoelectronics
No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
http://www.liteon.com/opto
SMD LED
LTST-C950TGKT
1. Description
SMD LED lamps from Lite-On are available in miniature sizes and special configurations for automated PC board assembly and
space-sensitive applications. These SMD LED lamps are suitable for use in a wide variety of electronic equipment, including
cordless and cellular phones, notebook computers, network systems, home appliances, and indoor signboard applications.
1.1 Features
1.2 Applications
Meet RoHS
Dome lens Chip LED
Ultra bright InGaN Chip LED
Package in 8mm tape on 7" diameter reels.
EIA STD package
I.C. compatible
Compatible with automatic placement equipment
Compatible with infrared reflow solder process
Telecommunication, Office automation, home appliances,
industrial equipment
Keypad/Keyboard Backlighting
Status indicator
Micro-displays
Signal and Symbol Luminary
2. Package Dimensions
Part No.
LTST-C950TGKT
Notes:
1.
2.
Lens Color
Water Clear
Source Color
InGaN
Green
All dimensions are in millimeters.
Tolerance is ±0.1 mm (.004") unless otherwise noted.
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Part No. : LTST-C950TGKT
BNS-OD-FC002/A4
SMD LED
LTST-C950TGKT
3. Rating and Characteristics
3.1 Absolute Maximum Ratings at Ta=25°C
Parameter
LTST-C950TGKT
Unit
Power Dissipation
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
DC Forward Current
Operating Temperature Range
Storage Temperature Range
Infrared Soldering Condition
76
mW
100
mA
20
-20
°C
-30
°C
to +80
°C
to +100
°C
mA
260
°C
For 10 Seconds
3.2 Suggest IR Reflow Condition For Pb Free Process:
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Part No. : LTST-C950TGKT
BNS-OD-FC002/A4
SMD LED
LTST-C950TGKT
3.3 Electrical / Optical Characteristics at Ta=25°C
LTST-C950TGKT
Parameter
Symbol
MIN.
Luminous Intensity
IV
1120.0
TYP.
-
MAX.
7100.0
mcd
Unit
Test
Condition
IF = 20mA
Note 1
Viewing Angle
2
1/2
25
deg
Note 2 (Fig.5)
Measurement
Peak Emission Wavelength
λP
530.0
nm
@Peak (Fig.1)
Dominant Wavelength
Spectral Line Half-Width
Forward Voltage
λd
Δλ
VF
2.8
IF = 20mA
520.0
35
-
3.8
535.0
nm
Note 3
nm
V
IF = 20mA
VR = 5V
Note 5
Reverse Current
IR
-
-
10
μA
Notes:
1. Luminous intensity is measured with a light sensor and filter combination that approximates the
CIE eye-response curve.
2.
θ1/2
is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength,
λd
is derived from the CIE chromaticity diagram and represents the
single wavelength which defines the color of the device.
4. Caution in ESD:
Static Electricity and surge damages the LED. It is recommend to use a wrist band or anti-electrostatic
glove when handling the LED. All devices, equipment and machinery must be properly grounded.
5. Reverse voltage (VR) condition is applied to IR test only. The device is not designed for reverse operation.
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Part No. : LTST-C950TGKT
BNS-OD-FC002/A4
SMD LED
LTST-C950TGKT
4. Bin Rank
4.1 Bin code list
VF Rank
Forward Voltage
Bin Code
D7
D8
D9
D10
D11
Color: Green ,
Min.
2.80
3.00
3.20
3.40
3.60
Tolerance on each Forward Voltage bin is +/- 0.1V
Unit: V@20mA
Max.
3.00
3.20
3.40
3.60
3.80
IV Rank
Luminous Intensity
Bin Code
W
X
Y
Z
Color: Green ,
Min.
1120
1800
2800
4500
Tolerance on each Luminous Intensity bin is +/- 15%
Unit: mcd@20mA
Max.
1800
2800
4500
7100
Hue Rank
Dominate Wavelength
Bin Code
AP
AQ
AR
Color: Green ,
Min.
520.0
525.0
530.0
Unit: mcd@20mA
Max.
525.0
530.0
535.0
Tolerance for each Dominate Wavelength bin is +/- 1nm
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Part No. : LTST-C950TGKT
BNS-OD-FC002/A4
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