GS2N7002KW
60V N-Channel MOSFET
Main Product Characteristics
V
DS
R
DS(ON)
I
D
60V
2.5Ω
340mA
D
S
G
SOT-323
Schematic Diagram
Features and Benefits
§
Advanced MOSFET process technology
§
Ideal for high efficiency switched mode power supplies
§
Low on-resistance with low gate charge
§
Fast switching and reverse body recovery
Description
The GS2N7002KW utilizes the latest techniques to achieve high cell density and low on-resistance. These
features make this device extremely efficient and reliable for use in high efficiency switch mode power supply
and a wide variety of other applications.
Absolute Maximum Ratings
(T
A
=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous(T
A
=25°C)
Drain Current-Continuous(T
A
=70°C)
Drain Current-Pulsed
1
Power Dissipation(T
A
=25°C)
Thermal Resistance, Junction-to-Ambient
2
Storage Temperature Range
Operating Junction Temperature Range
unless otherwise specified)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
STG
T
J
Max.
60
±20
340
272
1.5
350
357
-55 To +150
-55 To +150
Unit
V
V
mA
A
mW
°C/W
°C
°C
1/5
GS2N7002KW
60V N-Channel MOSFET
Electrical Characteristics
(T
J
=25°C
Parameter
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
GSS1
Gate-Body Leakage Current
I
GSS2
I
GSS3
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Diode Forward Voltage
Maximum Body-Diode
Continuous Current
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Total Gate Charge
Turn-On Delay Time
Turn-Off Delay Time
Reverse Recovery Time
Note:
unless otherwise specified)
Conditions
Min.
Typ.
Max.
Unit
Symbol
V
GS
=0V, I
D
=250μA
V
DS
= 60V, V
GS
=0V
V
GS
= ±20V, V
DS
=0V
V
GS
= ±10V, V
DS
=0V
V
GS
= ±5V, V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
= 10V, I
D
=300mA
V
GS
=4.5V, I
D
=200mA
I
S
=300mA,V
GS
=0V
-
60
-
-
-
-
1
-
-
-
-
-
-
-
-
-
1.4
1.3
1.4
-
-
-
1
±9
±200
±100
2.5
2.5
3
1.2
340
V
μA
μA
nA
nA
V
Ω
V
mA
V
GS(th)
R
DS(ON)
V
SD
I
S
C
lss
C
oss
C
rss
V
DS
= 30V, V
GS
=0V,
F=1.0MHz
-
-
-
18
12
7
-
-
-
PF
PF
PF
Q
g
t
d(on)
t
d(off)
t
rr
V
DS
= 30V, I
D
=0.3A,
V
GS
=10V
V
DD
=30V, I
D
=300mA,
V
GS
=10V,R
GEN
=6Ω
V
GS
=0V,
I
S
=300mA,V
R
=25V,
dI
S
/dt=-100A/μs
-
-
-
-
1.7
5
17
30
2.4
-
-
-
nC
nS
nS
1. Pulse Test: Pulse Width≤300us,Duty cycle
≤2%.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2/5
GS2N7002KW
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristic Curves
Figure 1.
Output Characteristics
Figure 2.
Transfer Characteristics
Figure 3.
Capacitance Characteristics
Figure 4.
Gate Charge
Figure 5.
Drain-Source on Resistance
Figure 6
.
Drain-Source on Resistance
3/5
GS2N7002KW
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristic Curves
Figure
7. Safe Operation Area
Figure
8. Switching Wave
4/5
GS2N7002KW
60V N-Channel MOSFET
Package Outline Dimensions (SOT-323)
Recommended Pad
Layout
(Unit: mm)
www.goodarksemi.com
5/5
Doc.USGS2N7002KWxSY2.0
Sep.2019
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
