SSF1020J7
100V N-Channel MOSFET
Main Product Characteristics
V
DSS
R
DS(on)
I
D
100V
16mΩ(typ.)
60A
PQFN 5X6
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Ideal for PWM, load switching and general purpose
applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175°C operating temperature
Lead free
Description
The SSF1020J7 utilizes the latest processing techniques to achieve high cell density, low on-
resistance and high repetitive avalanche rating. These features make this device extremely
efficient and reliable for use in power switching applications and a wide variety of other
applications.
Absolute Max Ratings
(T
A
=25°C unless otherwise specified)
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
DS
V
GS
E
AS
I
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V①
Continuous Drain Current, V
GS
@ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
60
50
240
143
2.0
100
± 20
240
39
-55 to + 175
W
W/°C
V
V
mJ
A
°C
A
Units
1/7
SSF1020J7
100V N-Channel MOSFET
Thermal Resistance
Symbol
R
θJC
R
θJA
Characteristics
Junction-to-case③
Junction-to-ambient
④
Typ.
1.05
—
Max.
—
62
Units
°C/W
°C/W
Electrical Characteristics
(T
A
=25°C
unless otherwise specified)
Symbol
V
(BR)DSS
R
DS(on)
V
GS(th)
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Min.
100
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
16
—
2.0
—
—
—
—
90
14
24
18.2
15.6
70.5
13.8
3150
300
240
Max.
—
20
—
—
1
10
100
-100
—
—
—
—
—
—
—
—
—
—
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1MHz
ns
nC
Units
V
mΩ
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
=10V,I
D
= 30A
V
DS
= V
GS
, I
D
= 250μA
T
J
= 125°C
V
DS
= 100V,V
GS
= 0V
T
J
= 150°C
V
GS
=20V
V
GS
= -20V
I
D
= 30A,
V
DS
=30V,
V
GS
= 10V
V
GS
=10V, V
DS
=30V,
R
L
=15Ω,
R
GEN
=2.5Ω
I
DSS
Drain-to-Source leakage current
μA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
nA
Source-Drain Ratings and Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
60
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=30A, V
GS
=0V
T
J
= 25°C, I
F
=60A,
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
—
—
—
—
—
—
57
107
240
1.3
—
—
A
V
ns
nC
2/7
SSF1020J7
100V N-Channel MOSFET
Test Circuits and Waveforms
EAS Test Circuit
Gate
Charge Test Circuit
Switching Time Test Circuit
Switching Waveforms
Notes:
①Calculated
continuous current based on maximum allowable junction temperature.
②
Repetitive rating; pulse width limited by max. junction temperature.
③
The power dissipation P
D
is based on max. junction temperature, using junction-to-case thermal
resistance.
2
④
The value of
R
θJA
is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a
still air environment with T
A
=25°C
3/7
SSF1020J7
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
I
D
-Drain Source Current (A)
V
DS
-Drain to Source Voltage (V)
Figure 1. Transfer Characteristic
Figure 2. Capacitance
Figure 3. On Resistance vs. Junction
Temperature
Figure 4. Breakdown Voltage vs. Junction
Temperature
4/7
SSF1020J7
100V N-Channel MOSFET
Figure 5. Gate Charge
Figure 6. Source-Drain Diode Forward Voltage
I
D
-Drain Current (A)
Figure 7. Safe Operation Area
Figure 8. Max Drain Current vs. Junction
Temperature
Figure 9. Transient Thermal Impedance Curve
5/7
PCB设计
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