NT256D64S88AAG
256MB : 32M x 64
PC2700 Unbuffered DIMM
184pin One Bank Unbuffered DDR SDRAM MODULE
Based on DDR333 32Mx8 SDRAM
Features
• 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module
• 32Mx64 Double Data Rate (DDR) SDRAM DIMM
• Performance:
PC2700
Speed Sort
DIMM
CAS Latency
-6
• DRAM D
LL
aligns DQ and DQS transitions with clock
transitions.
• Address and control signals are fully synchronous to positive
clock edge
Unit
2
133
7.5
266
MHz
ns
MHz
• Programmable Operation:
- DIMM CAS Latency: 2, 2.5
- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
- Operation: Burst Read and Write
• Auto-Refresh (CBR) and Self-Refresh Modes
• Automatic and controlled precharge commands
• 13/10/2 Addressing (row/column/bank)
• 7.8
µ
s Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 66-pin TSOP Type II Package
2.5
166
6
333
f
CK
Clock Frequency
t
CK
Clock Cycle
f
DQ
DQ Burst Frequency
• Intended for 100 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
• V
DD
= 2.5Volt ± 0.2, V
DDQ
= 2.5Volt ± 0.2
• Single Pulsed RAS interface
• SDRAMs have 4 internal banks for concurrent operation
• Module has one physical bank
• Differential clock inputs
• Data is read or written on both clock edges
Description
NT256D64S88AAG is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM),
organized as a one-bank high-speed memory array. The 32Mx64 module is a single-bank DIMM that uses eight 32Mx8 DDR
SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 333MHz. The DIMM is intended for use
in applications operating from 133 MHz to 166 MHz clock speeds with data rates of 266 to 333 MHz. Clock enable CKE0 controls all
devices on the DIMM.
Prior to any access operation, the device CAS latency and burst type/ length/operation type must be programmed into the DIMM by
address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.
These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common
design files minimizes electrical variation between suppliers.
The DIMM uses serial presence detects implemented via a serial EEPROM using the two-pin IIC protocol. The first 128 bytes of serial PD
data are programmed and locked during module assembly. The last 128 bytes are available to the customer.
All NANYA 184 DDR SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
Ordering Information
Part Number
NT256D64S88AAG-6
Speed
166MHz (6ns @ CL = 2.5)
133MHz (7.5ns @ CL= 2)
PC2700
Organization
32Mx64
Leads
Gold
Power
2.5V
REV 1.0
06 / 2002
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256D64S88AAG
256MB : 32M x 64
PC2700 Unbuffered DIMM
Pin Description
CK0, CK1, CK2
CK0 , CK1 , CK2
CKE0
RAS
CAS
Differential Clock Inputs
Clock Enable
Row Address Strobe
Column Address Strobe
DQ0-DQ63
DQS0-DQS7,
DQS9-DQS16
V
DD
Data input/output
Bi-directional data strobes
Power (2.5V)
WE
S0
A0-A9, A11, A12
A10/AP
BA0, BA1
V
REF
V
DDID
Write Enable
Chip Selects
Address Inputs
Address Input/Auto-precharge
SDRAM Bank Address Inputs
Ref. Voltage for SSTL_2 inputs
V
DD
Identification flag.
V
DDQ
V
SS
NC
SCL
SDA
SA0-2
V
DDSPD
Supply voltage for DQs (2.5V)
Ground
No Connect
Serial Presence Detect Clock Input
Serial Presence Detect Data input/output
Serial Presence Detect Address Inputs
Serial EEPROM positive power supply (2.5V)
Pinout
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
Front
V
REF
DQ0
V
SS
DQ1
DQS0
DQ2
V
DD
DQ3
NC
NC
V
SS
DQ8
DQ9
DQS1
V
DDQ
CK1
CK1
V
SS
DQ10
DQ11
CKE0
V
DDQ
DQ16
DQ17
DQS2
V
SS
A9
DQ18
A7
V
DDQ
DQ19
Pin
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
Back
V
SS
DQ4
DQ5
V
DDQ
DQS9
DQ6
DQ7
V
SS
NC
NC
NC
V
DDQ
DQ12
DQ13
DQS10
V
DD
DQ14
DQ15
NC
V
DDQ
NC
DQ20
A12
V
SS
DQ21
A11
DQS11
V
DD
DQ22
A8
DQ23
53
54
55
56
57
58
59
60
61
Pin
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
KEY
DQ32
V
DDQ
DQ33
DQS4
DQ34
V
SS
BA0
DQ35
DQ40
145
146
147
148
149
150
151
152
153
Front
A5
DQ24
V
SS
DQ25
DQS3
A4
V
DD
DQ26
DQ27
A2
V
SS
A1
NC
NC
V
DD
NC
A0
NC
V
SS
NC
BA1
Pin
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
Back
V
SS
A6
DQ28
DQ29
V
DDQ
DQS12
A3
DQ30
V
SS
DQ31
NC
NC
V
DDQ
CK0
CK0
Pin
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
Front
V
DDQ
WE
DQ41
CAS
V
SS
DQS5
DQ42
DQ43
V
DD
NC
DQ48
DQ49
V
SS
CK2
CK2
V
DDQ
DQS6
DQ50
DQ51
V
SS
V
DDID
DQ56
DQ57
V
DD
DQS7
DQ58
DQ59
V
SS
NC
SDA
SCL
Pin
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
Back
RAS
DQ45
V
DDQ
S0
NC
DQS14
V
SS
DQ46
DQ47
NC
V
DDQ
DQ52
DQ53
NC
V
DD
DQS15
DQ54
DQ55
V
DDQ
NC
DQ60
DQ61
V
SS
DQS16
DQ62
DQ63
V
DDQ
SA0
SA1
SA2
V
DDSPD
V
SS
NC
A10
NC
V
DDQ
NC
KEY
V
SS
DQ36
DQ37
V
DD
DQS13
DQ38
DQ39
V
SS
DQ44
Note: All pin assignments are consistent for all 8-byte unbuffered versions.
REV 1.0
06 / 2002
2
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256D64S88AAG
256MB : 32M x 64
PC2700 Unbuffered DIMM
Input/Output Functional Description
Symbol
CK0, CK1, CK2
CK0 , CK1, CK2
CKE0
Type
(SSTL)
(SSTL)
(SSTL)
Polarity
Function
Positive The positive line of the differential pair of system clock inputs. All the DDR SDRAM
Edge address and control inputs are sampled on the rising edge of their associated clocks.
Negative
The negative line of the differential pair of system clock inputs.
Edge
Active
High
Active
Low
Active
Low
Activates the SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode, or the Self-Refresh
mode.
Enables the associated SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored
but previous operations continue.
When sampled at the positive rising edge of the clock, RAS
,
CAS
,
WE define the
operation to be executed by the SDRAM.
Reference voltage for SSTL-2 inputs
Isolated power supply for the DDR SDRAM output buffers to provide improved noise
immunity
-
S0
(SSTL)
RAS
,
CAS
,
WE
V
REF
V
DDQ
BA0, BA1
(SSTL)
Supply
Supply
(SSTL)
Selects which SDRAM bank is to be active.
During a Bank Activate command cycle, A0-A12 defines the row address (RA0-RA12)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A9 defines the column address (CA0-CA9)
when sampled at the rising clock edge. In addition to the column address, AP is used to
invoke Auto-precharge operation at the end of the Burst Read or Write cycle. If AP is high,
auto-precharge is selected and BA0/BA1 define the bank to be precharged. If AP is low,
auto-precharge is disabled.
During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control
which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the
state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to pre-charge.
Data and Check Bit input/output pins operate in the same manner as on conventional
DRAMs.
Data strobes: Output with read data, input with write data. Edge aligned with read data,
centered on write data. Used to capture write data.
Power and ground for the DDR SDRAM input buffers and core logic
Address inputs. Connected to either V
DD
or V
SS
on the system board to configure the
Serial Presence Detect EEPROM address.
This bi-directional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V
DD
to act as a pullup.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to V
DD
to act as a pullup.
Serial EEPROM positive power supply.
A0 - A9
A10/AP
A11, A12
(SSTL)
-
DQ0 - DQ63,
DQS0 - DQS7
DQS9 - DQS16
V
DD,
V
SS
SA0 – SA2
SDA
SCL
V
DDSPD
(SSTL)
(SSTL)
Supply
-
Active
High
-
-
-
Supply
REV 1.0
06 / 2002
3
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256D64S88AAG
256MB : 32M x 64
PC2700 Unbuffered DIMM
Functional Block Diagram
(1 Bank, 32Mx8 DDR SDRAMs)
S0
DQS0
DQS9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DQS10
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DQS11
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DQS12
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
S0
BA0-BA1
A0-A12
RAS
CAS
CKE0
WE
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DQS4
DQS13
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DQS14
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS6
DQS15
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DQS16
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
CK0
120 ohm
CK0
CK1
120 ohm
CK1
CK2
120 ohm
CK2
VDDQ
VDD
VREF
VSS
VDDID
D0 - D7
D0 - D7
D0 - D7
D0 - D7
Strap: see Note 4
SDRAM x 3
SDRAM x 3
SDRAM x 2
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
D0
D4
D1
D5
D2
D6
D3
D7
CS : SDRAMs D0 -D7
BA0 - BA1 : SDRAMs D0 -D7
A0 - A12: SDRAMs D0 -D7
RAS : SDRAMs D0 -D7
CAS : SDRAMs D0 -D7
CKE0 : SDRAMs D0 -D7
WE : SDRAMs D0 -D7
Serial PD
SCL
WP
A0
SA0
A1
SA1
A2
SA2
SDA
Notes :
1.
2.
3.
4.
DQ-to-I/O wring may be changed within a byte.
DQ/DQS/DM/CKE/S relationships are maintained as shown.
DQ/DQS/DM/DQS resistors are 22 Ohms.
VDDID strap connections (for memory device VDD, VDDQ):
STRAP OUT (OPEN): VDD = VDDQ
STRAP IN (VSS): VDD is not equal to VDDQ.
REV 1.0
06 / 2002
4
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256D64S88AAG
256MB : 32M x 64
PC2700 Unbuffered DIMM
Serial Presence Detect --
Part 1 of 2
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 2.5V DDR SDRAMs with SPD
SPD Entry Value
Byte
Description
Number of Serial PD Bytes Written during
Production
Total Number of Bytes in Serial PD device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of DIMM Bank
Data Width of Assembly
Data Width of Assembly (cont’)
Voltage Interface Level of this Assembly
DDR SDRAM Device Cycle Time at CL=2.5
DDR SDRAM Device Access Time from Clock
at CL=2.5
DIMM Configuration Type
Refresh Rate/Type
Primary DDR SDRAM Width
Error Checking DDR SDRAM Device Width
DDR SDRAM Device Attr: Min CLK Delay,
Random Col Access
DDR SDRAM Device Attributes:
Burst Length Supported
DDR SDRAM Device Attributes: Number of
Device Banks
DDR SDRAM Device Attributes: CAS Latencies
Supported
DDR SDRAM Device Attributes: CS Latency
DDR SDRAM Device Attributes: WE Latency
DDR SDRAM Device Attributes:
DDR SDRAM Device Attributes: General
Minimum Clock Cycle at CL=2
Maximum Data Access Time from Clock at
CL=2
Minimum Clock Cycle Time at CL=1
Maximum Data Access Time from Clock at
CL=1
Minimum Row Precharge Time (t
RP
)
Minimum Row Active to Row Active delay
(t
RRD
)
Minimum RAS to CAS delay (t
RCD
)
Minimum RAS Pulse Width (t
RAS
)
Module Bank Density
Address and Command Setup Time Before
Clock
Address and Command Hold Time After Clock
Data Input Setup Time Before Clock
Data Input Hold Time After Clock
Reserved
SPD Revision
Checksum Data
DDR333
-6
128
256
SDRAM DDR
13
10
1
X64
X64
SSTL 2.5V
6ns
0.7ns
Non-Parity
SR/1x(7.8
µ
s)
X8
N/A
1 Clock
2,4,8
4
2/2.5
0
1
Differential Clock
+/-0.2V Voltage Tolerance
7.5ns
0.7ns
N/A
N/A
18ns
12ns
18ns
42ns
256MB
0.75ns
0.75ns
0.45ns
0.45ns
Undefined
Initial
Serial PD Data Entry (Hexadecimal) Note
DDR333
-6
80
08
07
0D
0A
01
40
00
04
60
70
00
82
08
00
01
0E
04
0C
01
02
20
00
75
70
00
00
48
30
48
2A
40
75
75
45
45
00
00
0A
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36-61
62
63
REV 1.0
06 / 2002
5
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
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