产品规格书
Specification
GD SB370S½GD SB3B0S
GOODARK型号
构造
Construction:
用途
: 金属结合型二极管
接受印栏
请记入贵公司的名称、接受日期、责任者人名。
Schottky Barrier Diode
:
高速整流用
Application :
For High speed Rectifier
制造工厂(Manufacturer):
苏州固锝电子股½有限公司
Suzhou Good-ark Electronics Co., Ltd
½成年月日
2013年02月18日
Prepared on Fed. 18 , 2012
½成部门:产品开发事业部
Prepared: R & D Department
th
记½½内容
CONTENTS
1.
外½规格
Case Dimension
2.
印字规格
Marking Spec
3.
编带规格
Taping Spec
4.
内部结构
Inside Formation
5.
最大定格Maximum
Ratings and Electrical Characteristics
6.
包装规格
Packing Spec
7.
标贴规格
Description Of Box label
8.
特性曲线图
Characteristic Curve
1
5.
最大定格
Maximum Ratings and Electrical Characteristics
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length @T
L
=100℃
Peak forward surge current
8.3ms single half sine-wave superimposed on
rates load
(JEDEC
Method)
Maximum DC
reverse current @T
J
=25℃
IR
(AV)
0.5
20
0.79
0.69
25
90
-55
½
+125
-55
½
+150
mA
I
FSM
100
Amps
Symbol
V
RRM
V
RMS
V
DC
IF
(AV)
SB370S
70
49
70
SB380S
80
56
80
3.0
SB390S
90
63
90
SB3B0S
100
70
100
Units
Volts
Volts
Volts
Amp
at rated DC blocking voltage @T
J
=100℃
Maximum
voltage at
forward
I
F
=3.0A,T
J
=25℃
I
F
=3.0A,T
J
=100℃
VF
R
θJL
Cj
T
j
T
STG
Volts
℃/W
pF
℃
℃
Typical thermal resistance(Note 1)
Typical junction capacitance
(Note2)
Operating junction temperature range
storage temperature range
Notes:1. Thermal Resistance Junction to Lead.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4