LT4542AC
N- and P-Channel 30-V Power MOSFET
GENERAL DESCRIPTION
The LT4542AC is the N-Channel and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density,DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power
management and other battery powered circuits where high-side switching,
and low in-line power loss are needed in a very small outline surface mount
package.
FEATURES
●
●
●
●
●
●
30V/6.7A,RDS(ON)=25m @VGS=10V (N-Ch)
30V/0.5A,RDS(ON)=40m @VGS=4.5V (N-Ch)
-30V/-6.1A,RDS(ON)=42m
@VGS=-10V (P-Ch)
-30V/-0.5A, RDS(ON)=60m @ VGS=-4.5V (P-Ch)
Super high density cell design for extremely low RDS
(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
●
●
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
PIN CONFIGURATION
(SOP-8)
Top View
●
●
●
Absolute Maximum Ratings
(T
A
=25℃Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150℃)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Energy with Single Pulse
Maximum Power Dissipation
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
V
DSS
V
GSS
T
A
=25℃
T
A
=70℃
I
D
I
DM
I
S
EAS
T
A
=25℃
T
A
=70℃
P
D
T
J
R
θJA
R
θJC
N-Channel
30
±20
6.9
5.5
30
1.7
10
2.0
1.3
P-Channel
-30
±20
-6.1
-4.9
-30
-1.7
20
Unit
V
V
A
A
A
mJ
W
℃
-55 to 150
Steady
10sec
44
75
47
Steady
10sec
30
65
35
℃/W
℃/W
Rev.1, Nov. 2010
LT4542AC
N- and P-Channel 30-V Power MOSFET
Electrical Characteristics
(T
A
=25℃ Unless Otherwise Specified)
Symbol
STATIC
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250µA
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±20V
V
DS
=30V, V
GS
=0V
V
DS
=-30V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V,T
J
=85℃
V
DS
=-24V, V
GS
=0V,T
J
=85℃
V
DS
≧5V,
V
GS
=
10V
V
DS
≦-5V,
V
GS
= -10V
V
GS
=10V, I
Ds
=0.5A
V
GS
=-10V,I
Ds
= -0.5A
V
GS
=4.5V, I
Ds
= 0.5A
V
GS
=-4.5V,I
Ds
=-0.5A
V
SD
DYNAMIC
Qg
Qgs
Qgd
C
iss
C
oss
C
rss
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
V
DS
=15V, V
GS
=0V, f=1MHz
P-Channel
V
DS
=-15V, V
GS
=0V, f=1MHz
N-Channel
V
DS
=15V, V
GS
=-10V,I
D
=6.1A
P-Channel
V
DS
=-15V, V
GS
=-10V, I
D
=-6.1A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
20
1.3
2.9
2.2
4
600
1150
100
170
75
120
0.5
5.5
9
8
10
11
33
49
11
21
17
15
19
21
60
89
21
39
14
28
nC
Diode Forward Voltage
I
S
=1.7A, V
GS
=0V
I
S
=-1.7A, V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
21
32
31
50
0.7
-0.8
25
42
40
60
1.3
-1.3
1
-1.3
1.7
-1.8
3
-2.5
±100
±100
1
-1
30
-30
µA
V
Parameter
Limit
Min
Typ
Max
Unit
I
GSS
Gate Leakage Current
nA
I
D(ON)
On-State Drain Current
A
R
DS(ON)
Drain-Source On-State Resistance
m
V
-
-
pF
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
=0V, V
GS
=0V, f=1MHz
N-Channel
V
DD
=15V, R
L
=15
I
D
=1A, V
GEN
=10V, R
G
=6
P-Channel
V
DD
=-15V, R
L
=15
I
D
=-1A, V
GEN
=-10V,R
G
=6
t
d(on)
t
r
t
d(off)
t
f
ns
Rev.1, Nov. 2010
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
