MMBZ5221B~MMBZ5267B
Zener diode
Features
1. High reliability
2. Wide voltage range available
3. Low reverse current level
4. Small outline package for space savings
5. Surface mount package
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
T
amb
≤75℃
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
410
P
V
/V
Z
150
-55~+150
Unit
mW
mA
℃
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
I=9.5mm(3/8”) T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=10mA
Type
Symbol
V
F
Min
Typ
Max
0.9
Unit
V
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MMBZ5221B~MMBZ5267B
V
Znom1)
I
ZT
for
r
zjT
r
zjK
at
I
ZK
I
R
at
V
R
TK
VZ
V
mA
Ω
Ω
mA
μA
V
%/K
MMBZ5221B
18A
2.4
20
<30
<1200
0.25
<100
1.0
<-0.085
MMBZ5222B
18B
2.5
20
<30
<1250
0.25
<100
1.0
<-0.085
MMBZ5223B
18C
2.7
20
<30
<1300
0.25
<75
1.0
<-0.080
MMBZ5224B
18D
2.8
20
<30
<1400
0.25
<75
1.0
<-0.080
MMBZ5225B
18E
3.0
20
<29
<1600
0.25
<50
1.0
<-0.075
MMBZ5226B
8A
3.3
20
<28
<1600
0.25
<25
1.0
<-0.070
MMBZ5227B
8B
3.6
20
<24
<1700
0.25
<15
1.0
<-0.065
MMBZ5228B
8C
3.9
20
<23
<1900
0.25
<10
1.0
<-0.060
MMBZ5229B
8D
4.3
20
<22
<2000
0.25
<5
1.0
<+0.055
MMBZ5230B
8E
4.7
20
<19
<1900
0.25
<5
2.0
<+0.030
MMBZ5231B
8F
5.1
20
<17
<1600
0.25
<5
2.0
<+0.030
MMBZ5232B
8G
5.6
20
<11
<1600
0.25
<5
3.0
<+0.038
MMBZ5233B
8H
6.0
20
<7
<1600
0.25
<5
3.5
<+0.038
MMBZ5234B
8J
6.2
20
<7
<1000
0.25
<5
4.0
<+0.045
MMBZ5235B
8K
6.8
20
<5
<750
0.25
<3
5.0
<+0.050
MMBZ5236B
8L
7.5
20
<6
<500
0.25
<3
6.0
<+0.058
MMBZ5237B
8M
8.2
20
<8
<500
0.25
<3
6.5
<+0.062
MMBZ5238B
8N
8.7
20
<8
<600
0.25
<3
6.5
<+0.065
MMBZ5239B
8P
9.1
20
<10
<600
0.25
<3
7.0
<+0.068
MMBZ5240B
8Q
10
20
<17
<600
0.25
<3
8.0
<+0.075
MMBZ5241B
8R
11
20
<22
<600
0.25
<2
8.4
<+0.076
MMBZ5242B
8S
12
20
<30
<600
0.25
<1
9.1
<+0.077
MMBZ5243B
8T
13
9.5
<13
<600
0.25
<0.5
9.9
<+0.079
MMBZ5244B
8U
14
9.0
<15
<600
0.25
<0.1
10
<+0.082
MMBZ5245B
8V
15
8.5
<16
<600
0.25
<0.1
11
<+0.082
MMBZ5246B
8W
16
7.8
<17
<600
0.25
<0.1
12
<+0.083
MMBZ5247B
8X
17
7.4
<19
<600
0.25
<0.1
13
<+0.084
MMBZ5248B
8Y
18
7.0
<21
<600
0.25
<0.1
14
<+0.085
MMBZ5249B
8Z
19
6.6
<23
<600
0.25
<0.1
15
<+0.086
MMBZ5250B
81A
20
6.2
<25
<600
0.25
<0.1
16
<+0.086
MMBZ5251B
81B
22
5.6
<29
<600
0.25
<0.1
17
<+0.087
MMBZ5252B
81C
24
5.2
<33
<600
0.25
<0.1
18
<+0.088
MMBZ5253B
81D
25
5.0
<35
<600
0.25
<0.1
19
<+0.089
MMBZ5254B
81E
27
4.6
<41
<600
0.25
<0.1
21
<+0.090
MMBZ5255B
81F
28
4.5
<44
<600
0.25
<0.1
21
<+0.091
MMBZ5256B
81G
30
4.2
<49
<600
0.25
<0.1
23
<+0.091
MMBZ5257B
81H
33
3.8
<58
<700
0.25
<0.1
25
<+0.092
MMBZ5258B
81J
36
3.4
<70
<700
0.25
<0.1
27
<+0.093
MMBZ5259B
81K
39
3.2
<80
<800
0.25
<0.1
30
<+0.094
MMBZ5260B
18F
43
3.0
<93
<900
0.25
<0.1
33
<+0.095
MMBZ5261B
81M
47
2.7
<105
<1000
0.25
<0.1
36
<+0.095
MMBZ5262B
81N
51
2.5
<125
<1100
0.25
<0.1
39
<+0.096
MMBZ5263B
81P
56
2.2
<150
<1300
0.25
<0.1
43
<+0.096
MMBZ5264B
81Q
60
2.1
<170
<1400
0.25
<0.1
46
<+0.097
MMBZ5265B
81R
62
2.0
<185
<1400
0.25
<0.1
47
<+0.097
MMBZ5266B
81S
68
1.8
<230
<1600
0.25
<0.1
52
<+0.097
MMBZ5267B
81T
75
1.7
<270
<1700
0.25
<0.1
58
<+0.098
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(T
L
)at 30℃,
Type
Marking
9.5mm(3/8”) from the diode body.
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
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MMBZ5221B~MMBZ5267B
Characteristics
(T
j
=25℃ unless otherwise specified)
Figure 1. Zener voltage versus zener current
Figure 2. Typical forward voltage
Figure 3. Typical leakage current
Figure 4. Effect of zener voltage on zener impendance
Figure 5. Typical capacitance
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
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MMBZ5221B~MMBZ5267B
Dimensions
Style 8:
PIN 1. Anode
2. No connection
3. Cathode
Notes:
1. Dimensioning and tolerance per
ANSI Y14.5M, 1982.
2. Controlling dimension: inch.
3. Maximum lead thickness includes lead finish
thickness. Minimum lead thickness is the
minimum thickness of base material.
SOT-23 Footprint
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
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