PJSD03TS~PJSD36TS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 120 Watts peak pules power( tp=8/20
μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• Lead free in comply with EU RoHS 2011/65/EU directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.034(0.85)
0.029(0.75)
0.050(1.25)
0.045(1.15)
3~36 Volts
POWER
120 Watts
SOD-523
Unit
：
inch(mm)
0.014(0.35)
0.009(0.25)
0.026(0.65)
0.021(0.55)
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.0014 grams
• Marking : PJSD03TS : KD
PJSD05TS : KE
PJSD07TS : KF
PJSD08TS : KR
PJSD12TS : LE
PJSD15TS : LM
PJSD24TS : LZ
PJSD36TS : MP
1
2
0.006(0.15)
0.002(0.05)
0.067(1.70)
0.059(1.50)
0.20 MIN.
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power Dissipation (tp=8/20
μs)
ESD Voltage
Operating Temperature
Storage Temperature
Symbol
P
PP
V
ESD
T
J
T
STG
Value
120
25
-50 to +150
-50 to +150
Units
W
KV
O
C
C
O
ELECTRICALCHATACTERISTICS
PJSD03TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=3.3V
I
PP
=5A
0Vdc Bias=f=1MHz
3.3Vdc Bias=f=1MHz
Min.
-
4
-
-
-
-
Typical
-
-
-
-
-
-
Max.
3.3
-
200
6.5
200
100
Units
V
V
μA
V
pF
pF
July 20.2010-REV.00
PAGE . 1
PJSD03TS~PJSD36TS
PJSD05TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=5V
I
PP
=5A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
6.0
-
-
-
-
Typical
-
-
-
-
-
-
Max.
5
-
5
9
110
60
Units
V
V
μA
V
pF
pF
PJSD07TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=7V
I
PP
=8.8A
0Vdc Bias=f=1MHz
Min.
-
7.5
-
-
-
Typical
-
-
-
-
-
Max.
7.0
-
150
22.7
85
Units
V
V
nA
V
pF
PJSD08TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=8V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
8.5
-
-
-
Typical
-
-
-
-
-
Max.
8
-
5
13
70
Units
V
V
μA
V
pF
PJSD12TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=12V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
13.3
-
-
-
Typical
-
-
-
-
-
Max.
12
-
5
17
60
Units
V
V
μA
V
pF
July 20.2010-REV.00
PAGE . 2
PJSD03TS~PJSD36TS
PJSD15TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=15V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
16.6
-
-
-
Typical
-
-
-
-
-
Max.
15
-
5
22
50
Units
V
V
μA
V
pF
PJSD24TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=24V
I
PP
=3A
0Vdc Bias=f=1MHz
Min.
-
26.7
-
-
-
Typical
-
-
-
-
-
Max.
24
-
5
32
25
Units
V
V
μA
V
pF
PJSD36TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=36V
I
PP
=1A
0Vdc Bias=f=1MHz
Min.
-
40
-
-
-
Typical
-
-
-
-
-
Max.
36
-
5
55
20
Units
V
V
μA
V
pF
July 20.2010-REV.00
PAGE . 3
PJSD03TS~PJSD36TS
I
PP
-Peak Pulse Current-% of I
PP
120
t
f
100
80
e
60
40
20
0
0
5
10
t
d
=t I
PP
/2
-t
100
Peak Value I
PP
TEST
m
m
%Of Rated Power
WAVEFORM
PARAMETERS
80
60
40
20
0
Peak Pulse Power
8/20
m
s
Average Power
0
25
50
75
100
125 150
O
15
T-Time-
m
s
20
25
30
T
L
-Lead Temperature- C
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
P
PP
-Peak Pulse Current-Watts
10000
1000
100
10
0.01
1
10
100
1000
10000
t
d
-Pulse Duration-
m
s
FIG. 3-Peak Pulse Power vs Pulse Time
July 20.2010-REV.00
PAGE . 4
PJSD03TS~PJSD36TS
MOUNTING PAD LAYOUT
SOD-523
Unit
：
inch(mm)
0.016
(0.40)
0.039
(1.00)
0.016
(0.40)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 5K per 7" plastic Reel
July 20.2010-REV.00
0.016
(0.40)
PAGE . 5
详细参数
全文预览
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
