DL5221B~DL5271B
Zener diode
Features
1. High reliability
2. Very sharp reverse characteristic
3. Low reverse current level
4. V
Z
-tolerance±5%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
T
amb
≤75℃
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
200
-65~+200
Unit
mW
mA
℃
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
I=9.5mm(3/8”) T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V
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DL5221B~DL5271B
V
Znom1)
I
ZT
for
r
zjT
r
zjK
at
I
ZK
I
R
at
V
R
V
mA
Ω
Ω
mA
μA
V
DL5221B
2.4
20
<30
<1200
0.25
<100
1.0
DL5222B
2.5
20
<30
<1250
0.25
<100
1.0
DL5223B
2.7
20
<30
<1300
0.25
<75
1.0
DL5224B
2.8
20
<30
<1400
0.25
<75
1.0
DL5225B
3.0
20
<29
<1600
0.25
<50
1.0
DL5226B
3.3
20
<28
<1600
0.25
<25
1.0
DL5227B
3.6
20
<24
<1700
0.25
<15
1.0
DL5228B
3.9
20
<23
<1900
0.25
<10
1.0
DL5229B
4.3
20
<22
<2000
0.25
<5
1.0
DL5230B
4.7
20
<19
<1900
0.25
<5
2.0
DL5231B
5.1
20
<17
<1600
0.25
<5
2.0
DL5232B
5.6
20
<11
<1600
0.25
<5
3.0
DL5233B
6.0
20
<7
<1600
0.25
<5
3.5
DL5234B
6.2
20
<7
<1000
0.25
<5
4.0
DL5235B
6.8
20
<5
<750
0.25
<3
5.0
DL5236B
7.5
20
<6
<500
0.25
<3
6.0
DL5237B
8.2
20
<8
<500
0.25
<3
6.5
DL5238B
8.7
20
<8
<600
0.25
<3
6.5
DL5239B
9.1
20
<10
<600
0.25
<3
7.0
DL5240B
10
20
<17
<600
0.25
<3
8.0
DL5241B
11
20
<22
<600
0.25
<2
8.4
DL5242B
12
20
<30
<600
0.25
<1
9.1
DL5243B
13
9.5
<13
<600
0.25
<0.5
9.9
DL5244B
14
9.0
<15
<600
0.25
<0.1
10
DL5245B
15
8.5
<16
<600
0.25
<0.1
11
DL5246B
16
7.8
<17
<600
0.25
<0.1
12
DL5247B
17
7.4
<19
<600
0.25
<0.1
13
DL5248B
18
7.0
<21
<600
0.25
<0.1
14
DL5249B
19
6.6
<23
<600
0.25
<0.1
15
DL5250B
20
6.2
<25
<600
0.25
<0.1
16
DL5251B
22
5.6
<29
<600
0.25
<0.1
17
DL5252B
24
5.2
<33
<600
0.25
<0.1
18
DL5253B
25
5.0
<35
<600
0.25
<0.1
19
DL5254B
27
4.6
<41
<600
0.25
<0.1
21
DL5255B
28
4.5
<44
<600
0.25
<0.1
21
DL5256B
30
4.2
<49
<600
0.25
<0.1
23
DL5257B
33
3.8
<58
<700
0.25
<0.1
25
DL5258B
36
3.4
<70
<700
0.25
<0.1
27
DL5259B
39
3.2
<80
<800
0.25
<0.1
30
DL5260B
43
3.0
<93
<900
0.25
<0.1
33
DL5261B
47
2.7
<105
<1000
0.25
<0.1
36
DL5262B
51
2.5
<125
<1100
0.25
<0.1
39
DL5263B
56
2.2
<150
<1300
0.25
<0.1
43
DL5264B
60
2.1
<170
<1400
0.25
<0.1
46
DL5265B
62
2.0
<185
<1400
0.25
<0.1
47
DL5266B
68
1.8
<230
<1600
0.25
<0.1
52
DL5267B
75
1.7
<270
<1700
0.25
<0.1
58
DL5268B
82
1.5
<330
<2000
0.25
<0.1
62
DL5269B
87
1.4
<370
<2200
0.25
<0.1
68
DL5270B
91
1.4
<400
<2300
0.25
<0.1
69
DL5271B
100
1.3
<500
<2600
0.25
<0.1
76
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(T
L
) at 30℃,
Type
9.5mm (3/8”) from the diode body.
TK
VZ
%/K
<-0.085
<-0.085
<-0.080
<-0.080
<-0.075
<-0.070
<-0.065
<-0.060
<+0.055
<+0.030
<+0.030
<+0.038
<+0.038
<+0.045
<+0.050
<+0.058
<+0.062
<+0.065
<+0.068
<+0.075
<+0.076
<+0.077
<+0.079
<+0.082
<+0.082
<+0.083
<+0.084
<+0.085
<+0.086
<+0.086
<+0.087
<+0.088
<+0.089
<+0.090
<+0.091
<+0.091
<+0.092
<+0.093
<+0.094
<+0.095
<+0.095
<+0.096
<+0.096
<+0.097
<+0.097
<+0.097
<+0.098
<+0.098
<+0.099
<+0.099
<+0.11
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
2/5
DL5221B~DL5271B
Characteristics
(T
j
=25℃ unless otherwise specified)
Figure 1. Zener Voltage versus Zener Current – Vz=1 thru 16 Volts
Figure 2. Zener Voltage versus Zener Current – Vz=15 thru 30 Volts
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
3/5
DL5221B~DL5271B
Figure 3. Zener Voltage versus Zener Current – Vz=30 thru 75 Volts
Figure 4. Thermal resistance from junction to ambient as a function of pulse duration
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
4/5
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