IC 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, PLASTIC, DIP-8, Programmable ROM
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | PLASTIC, DIP-8 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 其他特性 | 2 WIRE I2C INTERFACE; 32 BYTE PAGE WRITE; 40 YEARS DATA RETENTION |
| 最大时钟频率 (fCLK) | 0.1 MHz |
| 数据保留时间-最小值 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DDDR |
| JESD-30 代码 | R-PDIP-T8 |
| JESD-609代码 | e0 |
| 长度 | 9.817 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 8192 words |
| 字数代码 | 8000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 8KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP8,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | SERIAL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.08 mm |
| 串行总线类型 | I2C |
| 最大待机电流 | 0.00005 A |
| 最大压摆率 | 0.001 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| 最长写入周期时间 (tWC) | 5 ms |
| 写保护 | HARDWARE |
| Base Number Matches | 1 |
| NM24C65N | NM24C65XLZN | NM24C65LN | NM24C65XLZEN | |
|---|---|---|---|---|
| 描述 | IC 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, PLASTIC, DIP-8, Programmable ROM | IC 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, PLASTIC, DIP-8, Programmable ROM | IC 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, PLASTIC, DIP-8, Programmable ROM | IC 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, PLASTIC, DIP-8, Programmable ROM |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | PLASTIC, DIP-8 | DIP, DIP8,.3 | PLASTIC, DIP-8 | DIP, DIP8,.3 |
| Reach Compliance Code | compliant | unknown | compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | 2 WIRE I2C INTERFACE; 32 BYTE PAGE WRITE; 40 YEARS DATA RETENTION | 2 WIRE I2C INTERFACE; 32 BYTE PAGE WRITE; 40 YEARS DATA RETENTION | 2 WIRE I2C INTERFACE; 32 BYTE PAGE WRITE; 40 YEARS DATA RETENTION | 2 WIRE I2C INTERFACE; 32 BYTE PAGE WRITE; 40 YEARS DATA RETENTION |
| 最大时钟频率 (fCLK) | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz |
| 数据保留时间-最小值 | 40 | 40 | 40 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DDDR | 1010DDDR | 1010DDDR | 1010DDDR |
| JESD-30 代码 | R-PDIP-T8 | R-PDIP-T8 | R-PDIP-T8 | R-PDIP-T8 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 长度 | 9.817 mm | 9.817 mm | 9.817 mm | 9.817 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 |
| 字数 | 8192 words | 8192 words | 8192 words | 8192 words |
| 字数代码 | 8000 | 8000 | 8000 | 8000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 85 °C |
| 组织 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP8,.3 | DIP8,.3 | DIP8,.3 | DIP8,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL |
| 电源 | 5 V | 2/5 V | 3/5 V | 2/5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| 串行总线类型 | I2C | I2C | I2C | I2C |
| 最大待机电流 | 0.00005 A | 0.000002 A | 0.00001 A | 0.000002 A |
| 最大压摆率 | 0.001 mA | 0.003 mA | 0.001 mA | 0.003 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 1.8 V | 2.7 V | 1.8 V |
| 表面贴装 | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| 最长写入周期时间 (tWC) | 5 ms | 5 ms | 5 ms | 5 ms |
| 写保护 | HARDWARE | HARDWARE | HARDWARE | HARDWARE |
| Base Number Matches | 1 | 1 | 1 | - |
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