SGM2358
PRODUCT DESCRIPTION
The SGM2358 has dual rail-to-rail output voltage
feedback amplifiers in one package. It takes the
minimum operating supply voltage down to 3V and
the maximum recommended supply voltage is 5.5 V.
SGM2358 is specified over the extended -40°C to +85°C
temperature range.
The amplifier in SGM2358 provides 1MHz bandwidth,
Very low input bias currents of 10pA, these features
enable SGM2358 to be used for integrators, photodiode
amplifiers, and piezoelectric sensors. Rail-to-rail output
feature is useful for designers to buffer ASIC in
single-supply systems.
Applications of SGM2358 include safety monitoring,
portable equipment, battery and power supply control,
signal conditioning and interfacing for transducers in
low power systems.
The SGM2358 comes in SO-8 package.
1MHz, General Purpose
CMOS Operational Amplifier
FEATURES
•
Low Cost
•
Rail-to-Rail Output
1.7mV Typical V
OS
•
Unity Gain Stable
•
Gain Bandwidth Product: 1MHz
•
Very Low Input Bias Currents: 10pA
•
Input Common-Mode Voltage Range Includes
Ground
•
Operates from 3 V to 5.5 V
•
Small Packaging: SO-8
APPLICATIONS
ASIC Input or Output Amplifier
Sensor Interface
Piezo Electric Transducer Amplifier
Medical Instrumentation
Mobile Communication
Portable Systems
Smoke Detectors
Notebook PC
PCMCIA cards
Battery –Powered equipment
DSP interface
PIN CONFIGURATION
(Top View)
SGM2358
OUT A 1
-INA 2
+INA 3
-V
S
4
8
7
+V
S
OUT B
6 -INB
5 +INB
SO-8
Shengbang Microelectronics Co, Ltd
Tel: 86/451/84348461
www.sg-micro.com
REV. B
ELECTRICAL CHARACTERISTICS : V
S
= +5V
(At R
L
= 100kΩ connected to Vs/2, and V
OUT
= Vs/2, unless otherwise noted)
SGM2358
PARAMETER
CONDITION
TYP
+25℃
INPUT CHARACTERISTICS
Input Offset Voltage (V
OS
)
Input Bias Current (I
B
)
Input Offset Current (I
OS
)
Common-Mode Rejection Ratio(CMRR)
Open-Loop Voltage Gain( A
OL
)
Input Offset Voltage Drift (∆V
OS
/∆
T
)
OUTPUT CHARACTERISTICS
Output Voltage Swing from Rail
Output Current (I
OUT
)
POWER
SUPPLY
3.0
5.5
Power Supply Rejection Ratio (PSRR)
Quiescent Current / Amplifier (I
Q
)
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
Settling Time to 0.1%( t
S
)
Overload Recovery Time
Crosstalk
G = +1 , 2V Output Step
G = +1, 2 V Output Step
V
IN
·Gain = Vs
1KHz
1MHz
NOISE PERFORMANCE
Voltage Noise Density (e
n
)
f = 1kHz
f = 10kHz
42
38
nV/
nV/
Hz
Hz
MIN/MAX OVER TEMPERATURE
+25℃
-40℃ to +85℃
UNITS
MIN / MAX
1.7
10
10
V
S
= 5V, V
CM
= - 0.1V to 3.3 V
R
L
= 2KΩ ,Vo = 0.1V to 4.9V
R
L
=10KΩ ,Vo = 0.035V to 4.965V
88
100
110
3.5
7
7.5
mV
pA
pA
MAX
TYP
TYP
MIN
MIN
MIN
TYP
70
85
100
65
70
90
dB
dB
dB
µV/℃
R
L
= 2KΩ
R
L
= 10KΩ
0.8
0.008
43
35
30
V
V
mA
TYP
TYP
MIN
Operating Voltage Range
V
s
= +3 V to + 5.5 V
V
CM
=
(-V
S
) + 0.5V
I
OUT
= 0
C
L
= 100pF
1.0
0.65
9.0
4.0
-80
-65
80
0.4
3.0
5.5
65
1
V
V
dB
mA
MIN
MAX
MIN
MAX
70
0.95
MHz
V/µs
µs
µs
dB
dB
TYP
TYP
TYP
TYP
TYP
TYP
TYP
TYP
Specifications subject to change without notice.
２
SGM2358
PACKAGE/ORDERING INFORMATION
MODEL
SGM2358
ORDER
NUMBER
SGM2358YS/TR
PACKAGE
DESCRIPTION
SO-8
SPECIFIED
TEMPERATURE
RANGE
-40°C to +85°C
PACKAGE
OPTION
Tape and Reel, 2500
MARKING
INFORMATION
SGM2358YS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V- . . . . . . . . . . . . . . . . . . . . . 6.0 V
Storage Temperature Range . . . . . . . . .–65℃ to +150℃
Junction Temperature . . . . . . . . . . . . . . . .. . . . . . . .160℃
Operating Temperature Range . .. . . . . . -40℃ to +85℃
Package Thermal Resistance @ T
A
= 25℃
SO-8,
θ
JA
.............................
.....
....................................125
℃
/W
Lead Temperature Range (Soldering 10 sec)
.....................................................
260℃
ESD Susceptibility
HBM............................................
.....
...............................4000V
MM...............................
.................
....................................300V
CAUTION
This integrated circuit can be damaged by ESD.
Shengbang Micro-electronics recommends that all
integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes could
cause the device not to meet its published
specifications.
NOTES
1. Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
３
SGM2358
TYPICAL PERFORMANCE CHARACTERISTICS
At T
A
= +25℃, V
S
= +5V, and R
L
= 100kΩ connected to Vs/2,unless otherwise noted.
Small-Signal Step Response
G = +1
C
L
= 100pF
R
L
= 100KΩ
Large-Signal Step Response
G = +1
C
L
= 100pF
R
L
= 100KΩ
50mV/div
200mV/div
2µs/div
5
µs/div
60
Small-Signal Overshoot(%)
50
40
30
20
10
0
Small-Signal Overshoot vs.Load Capacitance
3
On Response vs.Frequency
G=-5
R
FB
=100KΩ
0
On Response(dB)
-3
V
S
= 5V
G = +1
V
IN
= 0.2V
P-P
C
L
=100pF
R
L
= 100kΩ
1
10
100
1000
Frequency(KHz)
10000
-6
-9
10
100
1000
Load Capacitance(pF)
10000
6
5
Output Voltage(Vp-p)
4
3
2
1
0
1
Maximum Output Voltage vs.Frequency
50
Quiescent Current(
μ
A)
Maximum Output Voltage
Without Slew-Rate
Induced Distortion
Quiescent And Short-Circuit Current
vs.Supply Voltage
30
25
Short-Circuit Current(mA)
45
40
35
30
25
I
Q
I
SC
20
15
10
5
V
S
= 5V
G = -5
R
L
= 100kΩ
C
L
=100pF
10
100
1000
Frequency(kHz)
10000
2
2.5
3
3.5
4
4.5
Supply Voltage(V)
5
5.5
４
SGM2358
TYPICAL PERFORMANCE CHARACTERISTICS
At T
A
= +25℃, V
S
= +5V, and R
L
= 100kΩ connected to Vs/2,unless otherwise noted.
Input Voltage Noise Spectral Density
vs.Frequency
1000
Voltage Noise(nV/
√
Hz)
CMRR And PSRR vs.Frequency
100
90
80
CMRR,PSRR(dB)
70
60
50
40
30
20
10
0
1
10
100
Frequency(kHz)
1000
10000
10
0.01
PSRR
100
CMRR
0.1
1
Frequency(kHz)
10
100
Supply Current vs.Temperature
0.46
0.44
Supply Current(mA)
0.42
0.4
0.38
0.36
0.34
0.32
-40
-20
0
20
40
Temperature(℃)
60
80
V
S
= 5V
Open-Loop Gain vs.Temperature
150
140
Open–Loop Gain(dB)
130
120
R
L
= 2kΩ
110
100
90
-40
-20
0
20
40
Temperature(℃)
60
80
R
L
= 10kΩ
Common-Mode Rejection Ratio
vs.Temperature
120
110
100
CMRR(dB)
-0.1V < V
CM
<
3
.5V
Power-Supply Rejection Ratio
vs.Temperature
120
110
100
PSRR(dB)
90
80
70
60
90
80
70
60
-40
-20
0
20
40
Temperature(℃)
60
80
-40
-20
0
20
40
Temperature(℃)
60
80
５
SGM2358
微控制器 MCU
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