SD101A - SD101C
SCHOTTKY BARRIER DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
Low Forward Voltage Drop
Guard Ring Construction for Transient
Protection
Low Reverse Recovery Time
Low Reverse Capacitance
A
B
A
C
D
Mechanical Data
•
•
•
•
•
Case: DO-35, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Polarity: Cathode Band
Weight: 0.13 grams (approx.)
DO-35
Dim
A
B
C
D
Min
25.40
Max
4.00
0.60
2.00
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
@ t
≤
1.0s
@ t = 10µs
I
FSM
P
d
R
θJA
T
j
, T
STG
SD101A
60
42
SD101B
50
35
15
50
2.0
400
375
-65 to +175
SD101C
40
28
Unit
V
V
mA
mA
A
mW
K/W
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
Maximum Forward Voltage Drop
@ T
A
= 25°C unless otherwise specified
Symbol
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
Min
Max
0.41
0.40
0.39
1.00
0.95
0.90
200
2.0
2.1
2.2
1.0
Unit
Test Condition
I
F
= 1.0mA
I
F
= 1.0mA
I
F
= 1.0mA
I
F
= 15mA
I
F
= 15mA
I
F
= 15mA
V
R
= 50V
V
R
= 40V
V
R
= 30V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 5.0mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
V
FM
V
Maximum Peak Reverse Current
I
RM
nA
Junction Capacitance
C
j
t
rr
pF
ns
Reverse Recovery Time
Note:
1. Valid provided that leads are kept at ambient temperature.
DS11008 Rev. I-2
1 of 2
SD101A - SD101C
10
A
2
B
T
j
= 25
°
C
I
F
, FORWARD CURRENT (mA)
C
1.0
C
j
, CAPACITANCE (pF)
C
1
0.1
A
B
0.01
0
0.5
V
F
, FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristic
Variations for Primary Conduction
1.0
0
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (V)
Fig. 2 Typ. Junction Capacitance vs Reverse Voltage
DS11008 Rev. I-2
2 of 2
SD101A - SD101C