1N4148 / 1N4448
FAST SWITCHING DIODE
POWER SEMICONDUCTOR
Features
•
•
•
Fast Switching Speed
General Purpose Rectification
Silicon Epitaxial Planar Construction
A
B
A
Mechanical Data
•
•
•
•
•
Case: DO-35
Leads: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.13 grams (approx.)
DO-35
Dim
A
B
C
D
Min
25.40
C
D
Max
4.00
0.60
2.00
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0µs
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
θJA
T
j
, T
STG
300
150
1.0
2.0
500
1.68
300
-65 to +175
1N4148
100
75
53
500
1N4448
Unit
V
V
V
mA
mA
A
mW
mW/°C
K/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
1N4148
1N4448
1N4448
V
FM
Min
0.62
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
µA
µA
µA
nA
pF
ns
Test Condition
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
V
R
= 75V
V
R
= 70V, T
j
= 150°C
V
R
= 20V, T
j
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100Ω
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
I
RM
C
j
t
rr
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
DS12019 Rev. B-2
1 of 2
1N4148 / 1N4448
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10,000
100
I
R
, LEAKAGE CURRENT (nA)
1000
10
100
1.0
10
0.1
V
R
= 20V
0.01
0
1
2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
1
0
100
200
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 2, Leakage Current vs Junction Temperature
DS12019 Rev. B-2
2 of 2
1N4148 / 1N4448
详细参数
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