LITE-ON
SEMICONDUCTOR
ES3AB thru ES3GB
REVERSE VOLTAGE -
50
to
400
Volts
FORWARD CURRENT -
3.0
Amperes
SURFACE MOUNT
SUPER FAST RECTIFIERS
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification
94V-0
SMB
SMB
A
DIM.
A
B
B
C
C
D
E
F
F
E
D
G
H
MIN.
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
MAX.
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
G
H
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
ES3AB
50
35
50
ES3BB
100
70
100
ES3CB
150
105
150
3.0
100
0.92
10
500
25
45
10
50
-55 to +150
-55 to +150
1.25
ES3DB
200
140
200
ES3GB
400
280
400
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
C
J
R
0JL
R
0JA
@T
L
=100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 3.0A DC
@T
J
=25 C
Maximum DC Reverse Current
@T
J
=125 C
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Typical Thermal Resistance (Note 4)
Operating Temperature Range
Storage Temperature Range
A
V
uA
ns
pF
C/W
C/W
T
J
T
STG
C
C
REV. 2, 01-Dec-2000, KSGB02
NOTES : 1. Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance junction to Lead
4. Thermal Resistance junction to Ambient
RATING AND CHARACTERISTIC CURVES
ES3AB thru ES3GB
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
100
80
60
40
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
20
0
1
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
2
5
10
20
50
100
LEAD TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT, (A)
1000
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT, (uA)
T
J
= 125 C
100
ES3AA - ES3DA
1.0
ES3GA
10
T
J
= 25 C
0.1
1.0
T
J
= 25 C
PULSEWIDTH:300us
.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
REV. 2, 01-Dec-2000, KSGB02
stm32/stm8
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