MMSZ4687-V SERIES
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE
4.3 to 43 Volts
POWER
500 mWatts
SOD-123
Unit: inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives
.028(0.7)
.019(0.5)
.154(3.90)
.141(3.60)
.110(2.8)
.098(2.5)
MECHANICAL DATA
• Case: SOD-123, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.01grams
• Mounting Position: Any
.008(.20)MAX
.005(.12)MAX
.016(.40)MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Maximum Power Dissipation @T
A
=25
O
C (Notes A)
Operating Junction and StorageTemperature Range
Symbol
Value
500
-50 to +150
P
D
T
J
NOTES:
A. Mounted on 5.0mm
2
(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
STAD-FEB.14.2007
.053(1.35)
.037(0.95)
.071(1.8)
.055(1.4)
Units
mW
O
C
PAGE . 1
MMSZ4687-V SERIES
Nominal Zener Voltage
Part Number
No m. V
Max. Zener Impedance
Z
ZT
@ I
ZT
M a x. V
Ω
mA
Ω
Max Reverse
Leakage Current
Z
ZK
@ I
ZK
mA
µA
V
Z
@ I
ZT
M i n. V
I
R
@ V
R
V
Marking
C ode
CP
CT
CU
CV
CA
CX
CY
CZ
DC
DD
DE
DF
DH
DJ
DK
DM
DN
DP
DT
DU
DV
DA
DZ
DY
EA
EC
ED
EE
EF
EH
EJ
MMSZ4687-V
MMSZ4688-V
MMSZ4689-V
MMSZ4690-V
MMSZ4691-V
MMSZ4692-V
MMSZ4693-V
MMSZ4694-V
MMSZ4695-V
MMSZ4696-V
MMSZ4697-V
MMSZ4698-V
MMSZ4699-V
MMSZ4700-V
MMSZ4701-V
MMSZ4702-V
MMSZ4703-V
MMSZ4704-V
MMSZ4705-V
MMSZ4706-V
MMSZ4707-V
MMSZ4708-V
MMSZ4709-V
MMSZ4710-V
MMSZ4711-V
MMSZ4712-V
MMSZ4713-V
MMSZ4714-V
MMSZ4715-V
MMSZ4716-V
MMSZ4717-V
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.27
8.65
9.50
10.50
11.40
12.40
13.30
14.30
15.20
16.20
17.10
18.10
19.00
20.90
22.80
23.80
25.70
26.60
28.50
31.40
34.20
37.10
40.90
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.14
9.56
10.50
11.60
12.60
13.70
14.70
15.80
16.80
17.90
18.90
20.00
21.00
23.10
25.20
26.30
28.40
29.40
31.50
34.70
37.80
41.00
45.20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
10
10
10
10
10
10
1
1
1
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
2
3
3
4
5
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
20.4
21.2
22.8
25
27.3
29.6
32.6
STAD-FEB.14.2007
PAGE . 2
MMSZ4687-V SERIES
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
600
500
400
300
200
TK
VZ
- Temperature Coefficient of V
Z
(10
-4
/K)
P
tot
- Total Power Dissipation (mW)
15
10
5
I
Z
= 5 mA
0
100
0
0
40
80
120
160
200
-5
0
10
20
40
30
V
Z
- Z-Voltage (V)
50
T
amb
- Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
C
D
- Diode Capacitance (pF)
1000
V
Z
- Voltage Change (mV)
200
T
j
= 25 °C
150
V
R
= 2 V
T
j
= 25 °C
100
100
I
Z
= 5 mA
10
50
1
0
5
10
15
20
V
Z
- Z-Voltage (V)
0
25
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
Figure 5. Diode Capacitance vs. Z-Voltage
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
V
Ztn
- Relative Voltage Change
1.3
I
F
- Forward Current (mA)
V
Ztn
= V
Zt
/V
Z
(25 °C)
100
10
T
j
= 25 °C
1.2
1.1
1.0
0.9
0.8
- 60
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
1
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
0.1
0.01
0.001
0
60
120
180
240
0
0.2
0.4
0.6
0.8
1.0
T
j
- Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
V
F
- Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
STAD-FEB.14.2007
PAGE . 3
MMSZ4687-V SERIES
80
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
r
Z
- Differential Z-Resistance (Ω)
100
1000
I
Z
= 1 mA
100
5 mA
60
40
20
0
0
4
6
8
12
20
V
Z
- Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
10
10 mA
1
Tj = 25 °C
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Voltage
50
40
30
20
10
0
15
P
tot
= 500 mW
T
amb
= 25 °C
I
Z
- Z-Current (mA)
20
25
30
35
V
Z
- Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
Z
thp
- Thermal Resistance for Pulse Cond. (KW)
1000
t
P
/T = 0.5
100
t
P
/T = 0.2
Single Pulse
R
thJA
= 300 K/W
T = T
jmax
- T
amb
10
t
P
/T = 0.1
t
P
/T = 0.02
t
P
/T = 0.01
t
P
/T = 0.05
i
ZM
= (- V
Z
+ (V
Z2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
1
10
-1
10
0
10
1
t
P
- Pulse Length (ms)
10
2
Figure 10. Thermal Response
STAD-FEB.14.2007
PAGE . 4
MMSZ4687-V SERIES
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2007
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-DEC.01.2006
PAGE . 5
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