Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
参数名称 | 属性值 |
厂商名称 | Toshiba(东芝) |
包装说明 | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code | unknown |
Is Samacsys | N |
最大集电极电流 (IC) | 0.15 A |
集电极-发射极最大电压 | 50 V |
配置 | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE) | 120 |
JESD-30 代码 | R-PDSO-G6 |
元件数量 | 2 |
端子数量 | 6 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | NPN |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 80 MHz |
Base Number Matches | 1 |
HN1C01FU-Y(5RMAA,F | HN1C01FU-Y(T5L,F,T | HN1C01FU-GR,LF | HN1C01FU-GR(5LMA,F | HN1C01FU-Y,LF | |
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描述 | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | TRANS 2NPN 50V 0.15A US6 | TRANS 2NPN 50V 0.15A US6 | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | Small Signal Bipolar Transistor |
厂商名称 | Toshiba(东芝) | - | - | Toshiba(东芝) | Toshiba(东芝) |
包装说明 | SMALL OUTLINE, R-PDSO-G6 | - | - | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code | unknown | - | - | unknown | unknown |
Is Samacsys | N | - | - | N | N |
最大集电极电流 (IC) | 0.15 A | - | - | 0.15 A | 0.15 A |
集电极-发射极最大电压 | 50 V | - | - | 50 V | 50 V |
配置 | SEPARATE, 2 ELEMENTS | - | - | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE) | 120 | - | - | 200 | 120 |
JESD-30 代码 | R-PDSO-G6 | - | - | R-PDSO-G6 | R-PDSO-G6 |
元件数量 | 2 | - | - | 2 | 2 |
端子数量 | 6 | - | - | 6 | 6 |
封装主体材料 | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | - | - | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | - | - | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | - | - | NPN | NPN |
表面贴装 | YES | - | - | YES | YES |
端子形式 | GULL WING | - | - | GULL WING | GULL WING |
端子位置 | DUAL | - | - | DUAL | DUAL |
晶体管应用 | AMPLIFIER | - | - | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | - | - | SILICON | SILICON |
标称过渡频率 (fT) | 80 MHz | - | - | 80 MHz | 80 MHz |
Base Number Matches | 1 | - | - | 1 | 1 |
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