75A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 厂商名称 | Rochester Electronics |
| 零件包装代码 | D2PAK |
| 包装说明 | TO-263AB, 3 PIN |
| 针数 | 4 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 75 A |
| 最大漏源导通电阻 | 0.005 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | NOT SPECIFIED |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | COMMERCIAL |
| 表面贴装 | YES |
| 端子面层 | TIN |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| ISL9N303AS3ST | ISL9N303AP3 | ISL9N303AP3_NL | ISL9N303AS3 | |
|---|---|---|---|---|
| 描述 | 75A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | 75A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | 75A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | 75A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262AA, 3 PIN |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 零件包装代码 | D2PAK | TO-220AB | TO-220AB | TO-262AA |
| 包装说明 | TO-263AB, 3 PIN | TO-220AB, 3 PIN | TO-220AB, 3 PIN | TO-262AA, 3 PIN |
| 针数 | 4 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V |
| 最大漏极电流 (ID) | 75 A | 75 A | 75 A | 75 A |
| 最大漏源导通电阻 | 0.005 Ω | 0.005 Ω | 0.005 Ω | 0.005 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | TO-220AB | TO-220AB | TO-262AA |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSIP-T3 |
| JESD-609代码 | e3 | e3 | e3 | e3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT APPLICABLE | NOT SPECIFIED | NOT APPLICABLE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 表面贴装 | YES | NO | NO | NO |
| 端子面层 | TIN | MATTE TIN | TIN | MATTE TIN |
| 端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT APPLICABLE | NOT SPECIFIED | NOT APPLICABLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 湿度敏感等级 | NOT SPECIFIED | NOT APPLICABLE | - | NOT APPLICABLE |
| Base Number Matches | 1 | 1 | 1 | - |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 |
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