1N6263W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
•
Low Forward Voltage Drop
Guard Ring Construction for Transient
Protection
Fast Switching Time
Low Reverse Capacitance
Surface Mount Package Ideally Suited for
Automatic Insertion
D
E
SOD-123
Dim
A
B
C
D
E
G
H
J
Min
3.55
2.55
1.40
0.25
—
Max
3.85
2.85
1.70
1.35
0.10
A B
G
C
J
Mechanical Data
•
•
•
•
•
Case: SOD-123, Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Date Code and Type Code
Type Code: SB
Weight: 0.01 grams (approx.)
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
VRWM
V
R
0.55 Typical
0.15 Typical
H
All Dimensions in mm
Maximum Ratings
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t
≤
1.0s
@ t = 10ms
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
1N6263W
60
42
15
50
2.0
400
375
-65 to +175
Unit
V
V
mA
mA
A
mW
K/W
°C
V
R(RMS)
I
F
I
FSM
P
d
R
θJA
T
j
, T
STG
Electrical Characteristics
Characteristic
Reverse Leakage Current
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
@ T
A
= 25°C unless otherwise specified
Symbol
I
RM
V
FM
C
j
t
rr
Min
Typ
2.0
1.0
Max
200
0.41
1.0
Unit
nA
V
pF
ns
Test Condition
V
R
= 50V
I
F
= 1.0mA
I
F
= 15mA
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 5.0mA
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Note:
1. Valid provided that terminals from the case are maintained at ambient temperature.
DS11014 Rev. B-2
1 of 1
1N6263W