BC556 - BC558
PNP EPITAXIAL PLANAR TRANSISTOR
POWER SEMICONDUCTOR
Features
•
•
•
Ideal for Switching and AF Amplifier
Applications
Divided into Current Gain subgroups
Complementary NPN Types
Available (BC546 thru BC548)
E
A
B
TO-92
Dim
A
B
Min
4.45
4.46
12.7
0.41
3.43
2.42
1.14
Max
4.70
4.70
—
0.63
3.68
2.67
1.40
Mechanical Data
•
•
•
•
Case: T0-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Pin Connections: See Diagram
Weight: 0.18 grams (approx)
D
BOTTOM
VIEW
C
C
D
E
G
H
E B C
All Dimensions in mm
H
G
H
Maximum Ratings
Collector-Base Voltage
25°C unless otherwise specified
Symbol
BC556
BC557
BC558
BC556
BC557
BC558
-V
CBO
Value
80
50
30
65
45
30
5.0
100
200
200
500
-65 to +150
Unit
V
Characteristic
Collector-Emitter Voltage
-V
CEO
-V
EBO
-I
C
-I
CM
-I
EM
P
d
T
j
, T
STG
V
V
mA
mA
mA
mW
°C
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Operating and Storage Temperature Range
DS21709 Rev. E-3
1 of 3
BC556-BC558
Electrical Characteristics
25°C unless otherwise specified
Characteristic
h-Parameters
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Group A
B
C
Output Admittance
Group A
B
C
Reverse Voltage Transfer Ratio
Group A
B
C
DC Current Gain
Current Gain Group A
B
C
Group A
B
C
Group A
B
C
Thermal Resistance, Junction to Ambient
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cutoff Current
BC556
BC557
BC558
BC556
BC557
BC558
—
—
—
110
200
420
—
—
—
—
—
—
600
—
90
150
270
180
290
500
120
200
400
—
80
250
700
900
660
—
0.2
0.2
0.2
—
—
—
—
—
150
—
2.0
—
—
—
220
450
800
—
—
—
250
300
650
—
750
800
15
15
15
4.0
4.0
4.0
15
5.0
—
6.0
10
h
fe
h
fe
h
fe
h
je
h
je
h
je
h
oe
h
oe
h
oe
h
re
h
re
h
re
—
—
—
1.6
3.2
6.0
—
—
—
—
—
—
220
330
600
2.7
4.5
8.7
18
30
60
1.5x10
-
4
2x10
-4
3x10
-4
—
—
—
4.5
8.5
15
30
60
110
—
—
—
—
—
—
kΩ
kΩ
kΩ
µS
µS
µS
—
—
—
Symbol
Min
Typ
Max
Unit
Test Condition
V
CE
= -5.0V, I
C
= -2.0mA, f = 1.0kHz,
Note 2
Note 2
V
CE
= -5.0V, I
C
= -10µA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -100mA
h
FE
—
R
θJA
-V
CE(SAT)
-V
BE(SAT)
-V
BE
-I
CES
-I
CES
-I
CES
-I
CES
-I
CES
-I
CES
-I
CBO
-I
CBO
f
T
C
CBO
NF
K/W
mV
mV
mV
nA
nA
nA
µA
µA
µA
nA
µA
MHz
pF
dB
Note 1
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
=-5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CE
= -80V
V
CE
= -50V
V
CE
= -30V
V
CE
= -80V, T
j
= 125°C
V
CE
= -50V, T
j
= 125°C
V
CE
= -30V, T
j
= 125°C
V
CB
= -30V
V
CB
= -30V, T
j
= 125°C
V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
V
CB
= -10V, f = 1.0MHz
V
CE
= -5V, I
C
= -200µA,
R
G
= 2.0kΩ, f = 1.0kHz,
∆f
= 200Hz
—
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
—
—
—
Notes:
1. Leads maintained at ambient temperature at a distance of 2mm from case.
2. Current gain subgroup “C” is not available for BC856.
DS21709 Rev. E-3
2 of 3
BC556-BC558
500
See Note 1
1000
V
CE
= -5V
P
d
, POWER DISSIPATION (mW)
400
h
FE
, DC CURRENT GAIN
100
100°C
T
A
= 25°C
300
-50°C
200
10
100
0
1
0
100
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
200
10
-2
10
-1
1
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
0.5
-V
CEsat
, COLLECTOR SATURATION VOLTAGE (V)
-I
C
/ -I
B
= 20
1000
¦
T
, GAIN-BANDWIDTH PRODUCT (MHz)
T
A
= 25°C
0.4
V
CE
= -10V
-5V
0.3
100
-2V
0.2
T
A
= 100°C
0.1
25°C
-50°C
0
0.1
1
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Collector Sat. Voltage vs Collector Current
10
0.1
1.0
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Gain-Bandwidth Product vs Collector Current
DS21709 Rev. E-3
3 of 3
BC556-BC558
详细参数
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