TP181
Zero-Drift, Bi-directional Current Sense Amplifier
Features
VOLTAGE OFFSET:
±100uV (MAX)
WIDE COMMON MODE VOLTAGE:
-0.3V to +36V
SUPPLY VOLTAGE:
2.7V to +30V
ACCURACY and ZERO-DRIFT PERFORMANCE
±1% Gain Error (Max over temperature)
0.5μV/°C Offset Drift (Max)
10ppm/°C Gain Drift (Max)
TP181A1: 50V/V
TP181A2: 100V/V
TP181A3: 200V/V
Description
The TP181 series of zero-drift, bi-directional current sense
amplifier can sense voltage drops across shunts at common-
mode voltages from –0.3V to 36V, independent of the supply
voltage. Three fixed gains are available: 50V/V, 100V/V and
200V/V. The low offset of the zero-drift architecture enables
current sensing with maximum drops across the shunt as low as
10mV
full-scale.
TP181 devices operate from a single +2.7V to 30V power
supply, with drawing a typical of 120uA of supply current. All
versions are specified from –40°C +125°C, and offered in SC70-
6 packages.
THREE GAIN OPTIONS for VOLTAGE OUTPUT
LOW SUPPLY CURRENT: 120uA (TYP)
Rail-to-Rail Output
PACKAGE: SC70-6
Industrial –40°C to 125°C Operation Range
ESD Rating: Robust 3KV – HBM, 2KV – CDM
Higher performance Drop-In Compatible With
INA213, INA214, INA199, NCS199 Products
GAIN OPTIONS TABLE
PRODUCT
TP181A1
TP181A2
TP181A3
GAIN
50
100
200
R3 and R4
20kΩ
10kΩ
5kΩ
R1 and R2
1MΩ
1MΩ
1MΩ
Applications
CURRENT SENSING
BATTERY CHARGERS
POWER MANAGEMENT
CELL PHONE CHARGER
ELECTRICAL CIGIRATE
WIRELESS CHARGER
TELECOM EQUIPMENT
(High−Side/Low−Side)
Application schematic
Reference
voltage
Supply
R
SHUNT
Load
Pin Configuration
TP181
6-Pin SC70
(-C Suffix)
REF
OUT
Output
REF
GND
R
1
R
3
IN-
1
2
3
6
OUT
-
+
+2.7V to +30V
C
BYPASS
0.01µF
to 0.1µF
V+
R
2
R
4
IN+
GND
V+
5
4
IN-
IN+
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1/ 9
Rev.A.2
TP181
Zero-Drift, Bi-directional Current Sense Amplifier
Order Information
Model Name
Order Number
TP181A1-CR
TP181
TP181A2-CR
TP181A3-CR
Gain
50V/V
100V/V
200V/V
Package
6-Pin SC70
6-Pin SC70
6-Pin SC70
Transport Media, Quantity
Tape and Reel, 3,000
Tape and Reel, 3,000
Tape and Reel, 3,000
Package Marking
9A1
9A2
9A3
Absolute Maximum Ratings
Note 1
Supply Voltage
Note 2
…………………..................42.0V
Input Voltage.....................................GND– 0.3 to 42V
Input Current: +IN, –IN
Note 3
...............................±5mA
Output Current: OUT...................................... ±35mA
Current at Supply Pins……………............... ±60mA
Operating Temperature Range........–40°C to 125°C
Maximum Junction Temperature................... 150°C
Storage Temperature Range.......... –65°C to 150°C
Lead Temperature (Soldering, 10 sec) ......... 260°C
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to
any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.
Note 2:
The op amp supplies must be established simultaneously, with, or before, the application of any input signals.
Note 3:
The inputs are protected by ESD protection diodes to each power supply. If the input extends more than 500mV beyond the
power supply, the input current should be limited to less than 10mA.
ESD, Electrostatic Discharge Protection
Symbol
HBM
CDM
Parameter
Human Body Model ESD
Charged Device Model ESD
Condition
ANSI/ESDA/JEDEC JS-001
ANSI/ESDA/JEDEC JS-002
Minimum Level
±2
±2
Unit
kV
kV
Thermal Resistance
Package Type
6-Pin SC70
θ
JA
227
θ
JC
80
Unit
°C/W
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2/ 9
Rev.A.2
TP181
Zero-Drift, Bi-directional Current Sense Amplifier
Electrical Characteristics
The specifications are at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 5 V, VIN+ = 12V, and VREF = VS / 2, unless otherwise noted
Symbol
INPUT
V
OS
V
OS
TC
V
CM
CMRR
I
B
I
OS
PSRR
Input Offset Voltage
Input Offset Voltage Drift
Common-mode Input Range
Common Mode Rejection Ratio
Input Bias Current
Input Offset Current
Power Supply Rejection Ratio
VSENSE = 0 mV
VSENSE = 0 mV, -40°C to 125°C
-40°C to 125°C
VIN+ = 5~26 V, VSENSE = 0 mV, -40°C to 125°C
VSENSE = 0 mV
VSENSE = 0 mV
Vs = +2.7~18V, VIN+ = +18V, VSENSE = 0 mV
-0.3
95
120
35
0.4
±1
±10
0.1
±100
0.5
36
uV
μV/°C
V
dB
uA
uA
uV/V
Parameter
Conditions
Min
Typ
Max
Unit
NOISE RTI
Note 4
e
n
OUTPUT
TP181A1
G
Gain
TP181A2
TP181A3
GE
GE TC
C
LOAD
V
OH
V
OL
Gain Error
Gain Error Vs Temperature
Maxim capacitive load
Output Swing from Supply Rail
Output Swing from Supply Rail
VSENSE = -5~5mV, -40°C to 125°C
-40°C to 125°C
No oscillation
R
LOAD
= 10kΩ to REF, -40°C to 125°C
R
LOAD
= 10kΩ to REF, -40°C to 125°C
50
100
200
±0.1%
3
1
0.02
0.01
0.05
0.05
±1%
10
ppm
nF
V
V
V/V
V/V
V/V
Input Voltage Noise Density
f = 1kHz
30
nV/√Hz
FREQUENCY RESPONSE
CLOAD = 10pF, TP181A1
BW
Bandwidth
CLOAD = 10pF, TP181A2
CLOAD = 10pF, TP181A3
SR
Slew Rate
48
30
20
0.6
kHz
kHz
kHz
V/μs
POWER SUPPLY
V+
I
Q
Supply Voltage
Quiescent Current
VSENSE = 0 mV
2.7
120
30
150
V
μA
TEMPERATURE RANGE
Specified range
Operating range
-40
-55
125
150
°C
°C
Note 4:
RTI = referred to input
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3/ 9
Rev.A.2
TP181
Zero-Drift, Bi-directional Current Sense Amplifier
Typical Performance Characteristics
The TP181A1 is used for characteristics at TA = 25°C, VS = 5V, VIN+ =12V, and VREF=VS/2, unless otherwise noted
Voltage Offset vs Temperature
140
120
Voltage offset (uV)
CMRR vs. Temperature
1
-1
CMRR (uV/V)
-3
-5
-7
-9
100
80
60
40
20
0
-50
-20
10
40
70
100
130
Temperature(℃)
-11
-13
-15
-50
0
50
Temperature(℃)
100
Figure 1
Figure 2
Gain vs. Frequency
40
CMRR Vs Frequency
100
30
80
CMRR(dB)
20
200
2000
Frequency(Hz)
20000
200000
Gain(dB)
20
60
10
40
0
20
20
200
2000
Frequency(Hz)
20000
200000
Figure 3
Figure 4
PSRR vs. Frequency
120
100
PSRR (dB)
80
60
40
20
0
20
200
2000
Frequency(Hz)
20000
200000
0.1-Hz to 10Hz Voltage Noise (Referred-to-Input)
PSRR vs. Frequency
120
100
PSRR (dB)
Referred-to-Iput
Voltage Noise (1uV/div)
80
60
40
20
0
20
200
2000
Frequency(Hz)
Time(1s/div)
Figure 5
20000
200000
Figure 5
Figure 6
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4/ 9
Rev.A.2
TP181
Zero-Drift, Bi-directional Current Sense Amplifier
Typical Performance Characteristics
The TP181A1 is used for characteristics at TA = 25°C, VS = 5V, VIN+ =12V, and VREF=VS/2, unless otherwise noted
Step response (10-mVpp Input Step)
PSRR vs. Frequency
120
PSRR (dB)
Input Voltage Output Voltage
(10mV/
(200mV/div)
100
80
60
40
20
0
20
200
2000
Frequency(Hz)
Time(100us/div)
Figure 5
20000
200000
Common-Mode PSRR vs. Frequency
Voltage Transient Response
120
100
Output Voltage
PSRR (dB)
VCM
(200mV/div)
(2V/div)
80
60
40
20
0
20
200
2000
Frequency(Hz)
Time(50us/div)
Figure 5
20000
200000
Figure 7
Figure 8
Noninverting PSRR vs. Frequency
Differential Input Overload
120
100
PSRR (dB)
80
Inverting Differential Input Overload
PSRR vs. Frequency
120
100
PSRR (dB)
80
Input Voltage
Input Voltage
2V/div
40
20
2V/div
60
60
40
20
0V
Output Voltage
0V
0V
20
200
0
20
0V
200
2000
Frequency(Hz)
Time(100us/div)
Figure 5
20000
200000
0
Figure 9
Output Voltage
2000
Frequency(Hz)
Time(100us/div)
Figure 5
20000
200000
Figure 10
PSRR vs. Frequency
Start-up Response
120
100
PSRR
Recovery
Brownout
vs. Frequency
120
100
Supply Voltage
PSRR (dB)
Supply Voltage
PSRR (dB)
80
80
1V/div
1V/div
60
40
20
0
20
60
40
20
Output Voltage
0V
Output Voltage
0V
200
2000
Frequency(Hz)
Time(100us/div)
Figure 5
20000
200000
0
20
200
2000
Frequency(Hz)
Time(100us/div)
Figure 5
20000
200000
Figure 11
Figure 12
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5/ 9
Rev.A.2
嵌入式系统
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