CRXI08D065G1
Silicon Carbide Schottky Diode 650 V, 8 A, 23.6 nC
General Description
This product family offers state of the art
performance. It is designed for high frequency
applications where high efficiency and high
reliability are required. It is qualified and
manufactured on the productive 6 inch SiC line in
China fully owned by CR MICRO.
Features
• Low conduction loss due to low V
F
• Extremely low switching loss by tiny Q
C
• Highly rugged due to better surge current
• Industrial standard quality and reliability
Applications
• Server
• Telecom
• High performance SMPS
• Power factor correction
Product Summary
V
RRM
I
F
(T
C
=159℃)
Q
C
650 V
8A
23.6 nC
TO-220-2
Equivalent circuit
Package Marking
Part #
CRXI08D065G1
Marking
CRXI08D065G1
Package
TO-220-2
Page 1
CRXI08D065G1
Silicon Carbide Schottky Diode 650 V, 8 A, 23.6 nC
Maximum Ratings
Parameter
(at Tc = 25 ° unless otherwise specified)
C,
Symbol
V
RRM
V
RSM
V
R
Value
650
650
650
24
12
8
Unit
V
V
V
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
Continuous Forward Current
T
C
= 25°
C
T
C
= 135°
C
T
C
= 159°
C
Repetitive Peak Forward Surge Current
T
C
= 25°
p
=10ms,Half Sine Pulse
C,t
T
C
= 110°
p
=10ms,Half Sine Pulse
C,t
Non-Repetitive Forward Surge Current
T
C
= 25°
p
=10ms,Half Sine Pulse
C,t
T
C
= 110°
p
=10ms,Half Sine Pulse
C,t
Non-Repetitive Forward Surge Current
T
C
= 25°
p
=10ms,Half Sine Pulse
C,t
T
C
= 110°
p
=10ms,Half Sine Pulse
C,t
Power dissipation
T
C
= 25°
C
T
C
= 110°
C
Operating junction Range
Storage temperature Range
I
F
A
I
FRM
37
25
A
I
FSM
71
60
A
∫i
2
dt
25
17.8
A
2
s
P
tot
T
j
T
stg
107
46.5
-55 to +175
-55 to +150
W
°
C
°
C
Page 2
CRXI08D065G1
Silicon Carbide Schottky Diode 650 V, 8 A, 23.6 nC
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Symbol
R
thJC
Typ.
1.4
Unit
°
C/W
Electrical Characteristic
(at Tc = 25 ° unless otherwise specified)
C,
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
I
F
=8A
Forward Voltage
V
F
-
-
1.5
1.9
1.8
2.4
V
T
j
=25°
C
T
j
=175°
C
V
R
=650V
Reverse Current
I
R
-
-
-
-
60
200
μA
T
j
=25°
C
T
j
=175°
C
V
R
=400V，T
j
=25℃
Total Capacitive Charge
Q
C
-
23.6
-
nC
=
0
T
j
=25℃, f=1MHz
Total Capacitance
C
-
-
-
439
44.4
41.2
-
-
-
pF
V
R
=0V
V
R
=200V
V
R
=400V
Page 3
CRXI08D065G1
Silicon Carbide Schottky Diode 650 V, 8 A, 23.6 nC
Characteristics Curve：
Fig 1: Forward Characteristics
Fig 2: Reverse Characteristics
Fig 3: Current Derating
Fig 4: Power Derating
Fig 5: Capacitance vs. Reverse Voltage
Fig 6: Reverse Charge vs. Reverse Voltage
Page 4
CRXI08D065G1
Silicon Carbide Schottky Diode 650 V, 8 A, 23.6 nC
Fig 7: Typical Capacitance Stored Energy
Fig 8: Transient Thermal Impedance
Page 5
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