CRRF10L100A
100V Trench MOS Barrier Schottky VF 0.65V@5A, 25℃
Features
• Trench MOS schottky technology
• Low stored charge Majority Carrier Conduction
• Ultra low forward voltage drop
• Low leakage current
• Low power loss and high efficiency
• High surge capacity
• ESD rating:>20K volts
Applications
• Schottky rectifier design for high frequency switched mode power supplies, such as
adaptators and on board DC/DC converters.
Product Summary
Symbol
I
F
(AV)
V
RRM
V
F(per diode)
T
j
(
max
)
Value
5A×2
100V
0.65V
150℃
TO-220F
Top view
Bottom view
10Amperes, 100 Volts
A1
A1
K
A2
A2
K
A1
A2
Package Marking and Ordering Information
Part #
CRRF10L100A
Marking
Package
TO-220F
Packing
Tube
Reel Size
N/A
Tape Width
N/A
Qty
50pcs
K
-
Major Rating and Characteristics(
per diode
)
Parameter
Repetitive peak reverse voltage
Storage temperature range
Maximum average forward current 50 % duty
cycle, rectangular waveform
Surge non repetitive forward current
Tc=125℃
8.3 ms sine
Symbol
V
RRM
T
J
I
F
(AV)
I
FSM
Value
100
-55 to 150
5
150
Unit
V
℃
A
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRRF10L100A
100V Trench MOS Barrier Schottky VF 0.65V@5A, 25℃
Thermal Characteristics
(at T
A
=25℃ unless otherwise noted)
℃
Parameter
Typical thermal resistance
R
JM
0.20
Symbol
R
JA
CRRF10L100A
4.00
°C/W
Unit
Electrical Characteristic
(at T
A
= 25 °C, unless otherwise note, per diode)
Parameter
Symbol
Value
min.
-
-
typ.
0.65
0.88
0.61
0.74
-
-
270
max.
0.71
-
Unit
Test Condition
I
F
=5A
I
F
=10A
T
A
=25℃
Forward Voltage Drop
V
F
(1)
V
-
-
0.66
-
50
15
-
uA
V
R
=100V
-
-
mA
pF
I
F
=5A
I
F
=10A
T
A
=25℃
T
A
=125℃
T
A
=125℃
Reverse leakage current
I
R(2)
C
j
-
Junction capacitance
V
R
=5V
DC
,25℃(1MHz)
Notes
(1) Pulse test: 300us pulse width,2% duty cycle
(2) Pulse test: 300us pulse width,2% duty cycle
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRRF10L100A
100V Trench MOS Barrier Schottky VF 0.65V@5A, 25℃
Characteristics Curves
(T
A
=25℃ unless otherwise noted, per diode)
℃
Fig.1 Typical Forward Voltage Characteristics
100
10
IF(A)
1
125℃
℃
150℃
℃
25℃
℃
75℃
℃
100℃
℃
0.1
0.1
0.2
0.3
0.4
VF(V)
0.5
0.6
0.7
0.8
0.9
Fig.2 Typical Reverse Leakage Characteristics
1.00E+00
1.00E-01
1.00E-02
T
A
=150℃
℃
1.00E-03
IR(A)
1.00E-04
1.00E-05
1.00E-06
T
A=
25℃
℃
1.00E-07
1.00E-08
10
20
30
40
50
VR(V)
60
70
80
90
100
T
A
=125℃
℃
T
A
=100℃
℃
T
A=
75℃
℃
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRRF10L100A
100V Trench MOS Barrier Schottky VF 0.65V@5A, 25℃
Fig.3 Junction capacitance versus reverse voltage applied (typical values)
1.00E-09
Cj(F)
1.00E-10
1.00E-11
0
5
10
15
20
25
VR(V)
30
35
40
45
50
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRRF10L100A
100V Trench MOS Barrier Schottky VF 0.65V@5A, 25℃
Package Outline Dimensions
（
unit：mm）
：
）
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 5
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