CRRT20L150A
150V Trench MOS Barrier Schottky VF 0.87V@10A, 25℃
Features
• Trench MOS schottky technology
• Low stored charge Majority Carrier Conduction
• Ultra low forward voltage drop
• Low leakage current
• Low power loss and high efficiency
• High surge capacity
• ESD rating:>20K volts
Applications
• Schottky rectifier design for high frequency switched mode power supplies, such as
adaptators and on board DC/DC converters.
Product Summary
Symbol
I
F
(AV)
V
RRM
VF
typ (at IF=10A)
T
j
(
max
)
Value
10A×2
150V
0.87V
150℃
20Amperes, 150 Volts
A1
A1
K
A2
A2
Package Marking and Ordering Information
Part #
CRRT20L150A
Marking
Package
TO-220
Packing
Tube
Reel Size
N/A
Tape Width
N/A
K
Qty
50pcs
-
Major Rating and Characteristics(
per diode
)
Parameter
Repetitive peak reverse voltage
Storage temperature range
Maximum average forward current 50 % duty
cycle, rectangular waveform
Surge non repetitive forward current
Tc=125℃
8.3 ms sine
Symbol
V
RRM
T
J
I
F
(AV)
I
FSM
Value
150
-55 to 150
10
88
Unit
V
℃
A
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRRT20L150A
150V Trench MOS Barrier Schottky VF 0.87V@10A, 25℃
Thermal Characteristics
(at T
A
=25℃ unless otherwise noted)
℃
Parameter
Typical thermal resistance
R
JM
0.20
Symbol
R
JA
CRRT20L150A
4.00
°C/W
Unit
Electrical Characteristic
(at T
A
= 25 °C, unless otherwise note, per diode)
Parameter
Symbol
Value
min.
-
-
typ.
0.8
0.87
0.66
0.75
-
-
188
max.
-
-
Unit
Test Condition
I
F
=5A
I
F
=10A
T
j
=25℃
Forward Voltage Drop
V
F
(1)
V
-
-
-
-
20
10
-
uA
V
R
=150V
-
-
mA
pF
I
F
=5A
I
F
=10A
T
j
=25℃
T
j
=125℃
T
j
=125℃
Reverse leakage current
Junction capacitance
I
R(2)
C
j
-
V
R
=5V
DC
,25℃(1MHz)
Notes
(1) Pulse test: 300us pulse width,2% duty cycle
(2) Pulse test: 300us pulse width,2% duty cycle
Characteristics Curves(T
A
=25℃ unless otherwise noted, per diode)
℃
Fig.1 Typical Forward Voltage Characteristics
100
100℃
℃
10
IF(A)
25℃
℃
75℃
℃
150℃
℃
125℃
℃
1
0.1
0.2
0.3
0.4
0.5
VF(V)
0.6
0.7
0.8
0.9
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRRT20L150A
150V Trench MOS Barrier Schottky VF 0.87V@10A, 25℃
Fig.2 Typical Reverse Leakage Characteristics
1.00E+00
1.00E-01
1.00E-02
1.00E-03
IR(A)
1.00E-04
1.00E-05
1.00E-06
1.00E-07
1.00E-08
50
60
70
80
90
100
VR(V)
110
120
130
140
150
150℃
℃
125℃
℃
100℃
℃
75℃
℃
25℃
℃
Fig.3 Junction capacitance versus reverse voltage applied (typical values)
1.00E-08
1.00E-09
Cj(F)
1.00E-10
1.00E-11
0
5
10
15
20
VR(V)
25
30
35
40
45
50
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRRT20L150A
150V Trench MOS Barrier Schottky VF 0.87V@10A, 25℃
Package Outline Dimensions (unit: mm)
Symbol
A
A1
A2
b
b2
c
D
D1
D2
e
E
E1
H1
L
L1
L2
Q
P
Dimensions In Millimeters
Min.
4.30
1.20
2.20
0.69
1.00
0.33
14.70
8.59
11.75
2.54 BSC.
9.60
7.00
6.20
12.60
2.70
12.13
2.40
3.50
10.60
8.46
7.00
14.80
3.80
16.50
3.10
3.90
Max.
4.80
1.45
2.90
0.95
1.60
0.65
16.20
9.65
13.60
Dimensions In Inches
Min.
0.169
0.047
0.087
0.027
0.039
0.013
0.579
0.338
0.463
0.100 BSC.
0.378
0.276
0.244
0.496
0.106
0.478
0.094
0.138
0.417
0.333
0.276
0.583
0.150
0.650
0.122
0.154
Max.
0.189
0.057
0.114
0.037
0.063
0.026
0.638
0.380
0.535
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRRT20L150A
150V Trench MOS Barrier Schottky VF 0.87V@10A, 25℃
Revision History
Revison
2.0
Date
2020-6-12
Major changes
Release of formal version
Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product andsemicondutor products have certain probability to fail or malfunction, which may result in personal
Any and all is not intended for use in applications that require extraordinary levels of quality and reliability,
injury, death or property damage. Customer aredesign, responsible for providing adequate safe measures when
CRM(CQ) reserves the right to improve product solely function and reliability without notice.
Rev 2.0
©China Resources Microelectronics (Chongqing) Limited
Page 5
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