Silicon FS
Trench
IGBT
R
○
BT25T120 CKR
General Description
：
Using HUAJING's proprietary trench design, advanced FS(field stop)
technology and integrated with Free Wheeling Diode, the 1200V Trench FS
IGBT offers superior conduction and switching performances, high
avalanche ruggedness.
V
CES
I
C
P
tot
(
T
C
=25
℃
)
V
CE(SAT)
1200
25
208
1.95
V
A
W
V
Features：
Trench FS Technology, Positive temperature coefficient
Low saturation voltage: V
CE(sat)
, typ =1.95V
@ I
C
=25A
Extremely enhanced avalanche capability
Applications
：
Power switch circuit of induction cooker(IH).
Absolute Maximum Ratings
（T
j
= 25℃ unless otherwise specified）
：
Symbol
V
CES
V
GES
I
C
Collector Current @T
C
= 100 °
C
Parameter
Collector-Emitter Voltage
Gate- Emitter Voltage
Collector Current@T
C
= 25 °
C
Rating
1200
±20
50
25
75
25
75
208
83
150，-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
℃
℃
I
CM
a1
Pulsed Collector Current@T
C
= 25 °
C
Diode Continuous Forward Current @T
C
= 100 °
C
Diode Maximum Forward Current@T
C
= 25 °
C
Power Dissipation @ T
C
= 25°
C
I
F
I
FM
P
D
Power Dissipation @T
C
= 100 °
C
T
J
，T
stg
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
L
a1：Repetitive rating; pulse width limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to Ambient
Typ.
--
--
Max.
0.6
40
Units
℃/W
℃/W
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 8
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BT25T120 CKR
Electrical Characteristics of the IGBT
（T
j
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
CES
I
CES
I
GES(F)
I
GES(R)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Gate to Emitter Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GE
=0V,I
CE
=1mA
V
GE
=0V,V
CE
=V
CES
V
GE
=+20V
V
GE
=-20V
Rating
Min.
Typ.
Max.
Units
V
mA
nA
nA
1200
--
--
--
--
--
--
--
--
1.0
+250
-250
ON Characteristics
Symbol
V
CE(sat)
V
FM
V
GE(TH)
Parameter
Collector-Emitter Saturation Voltage
Diode Forward Voltage
Gate Threshold Voltage
Test Conditions
I
C
=25A,V
GE
=15V
I
F
=25A
I
C
=250uA,V
CE
=V
GE
Rating
Min.
Typ.
Max.
Units
V
V
V
--
--
4.5
1.95
2.7
5.8
2.5
3.2
7.5
Pulse width tp≤300µ
s,δ≤2%
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
V
CE
=30V,V
GE
=0V
f=1MHz
--
--
2370
59
43
--
--
--
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Eon
Eoff
Ets
Q
g
Q
ge
Q
gc
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
T
j
= 25℃
V
CE
=600V,I
C
=25A
V
GE
=0/15V,
R
g
=10Ω
Inductive Load
--
--
--
--
--
--
V
CE
=960V,I
C
=25A
V
GE
=15V
--
--
34
36
198
75
1.88
0.95
2.83
142
23
75
--
--
--
--
--
--
--
--
--
--
nC
mJ
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 8
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BT25T120 CKR
Characteristics Cure
R
○
Figure 1.
Typical Output Characteristics
Figure 2.
Typical Output Characteristics
Figure 3.
Typical Saturation Voltage vs.Junction
Temperature
Figure 4.
Typical Saturation Voltage vs. Gate-
Emitter Voltage
Figure 5.
Typical Saturation Voltage vs.
Gate-Emitter Voltage
F Figure 6.
Typical Capacitance Characteristics
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 8
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BT25T120 CKR
R
○
Figure 7.
Typical Turn-On Characteristics vs.
Figure 8.
Typical Turn-Off Characteristics vs.Gate
Resistance
Gate Resistance
Figure 9.
Typical Switching Losses vs. Gate
Resistance
Figure 10.
Typical Turn-On Characteristics vs.
Collector Current
Figure 11.
Typical Turn-Off Characteristics
vs. Collector Current
Figure 12.
Typical Switching Losses vs. Collector
Current
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 8
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BT25T120 CKR
R
○
Figure 13.
Typical IGBT Forward Safe Operating
Area
Figure 14.
Typical Gate Charge
Figure 15.
Collector Current vs.Case Temperature
Figure 16.
Power Dissipation vs.Case Temperature
Figure 17.
Typical Diode Forward Characteristics
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 8
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DSP 与 ARM 处理器
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