Silicon
N-Channel
Power MOSFET
R
○
CS4N65 A3R
General Description
：
CS4N65 A3R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
650
4
75
2.4
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤2.8Ω)
l
Low Gate Charge
(Typical Data: 14.5nC)
l
Low Reverse transfer capacitances
(Typical:3.5pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
650
4
2.5
16
±30
200
5.0
75
0.60
150，–55 to 150
300
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
V
GS
E
AS
a2
a3
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
dv/dt
P
D
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 5 V0 1
CS4N65 A3R
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
=650V, V
GS
= 0V,
T
a
= 25℃
V
DS
=520V, V
GS
= 0V,
T
a
= 125℃
V
GS
=+30V
V
GS
=-30V
Rating
Min.
Typ.
Max.
Unit
s
V
V/℃
µA
µA
nA
nA
650
--
--
--
--
--
--
0.67
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=2A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
2.4
--
2.8
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=2A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
3.5
610
53
3.5
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=4A V
DD
=520V
V
GS
= 10V
I
D
=4A V
DD
= 325V
R
G
=10Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
14
16
32
11
14.5
3
6.5
--
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 5 V0 1
CS4N65 A3R
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
I
RRM
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
I
S
=4.0A,T
j
= 25℃
I
S
=4.0A,V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
A
--
--
--
--
--
--
--
--
--
256
1200
9.4
4
16
1.5
--
--
--
Reverse Recovery Charge
Reverse Recovery Current
dI
F
/dt=100A/us,
V
GS
=0V
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.67
100
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10mH,
I
D
=6.3A, Start T
J
=25℃
a3
：I
SD
=4A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
a2
a1
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 5 V0 1
CS4N65 A3R
Characteristics Curve：
100
R
○
80
PD , Power Dissipation
，Watts
70
60
50
40
30
20
10
Id , Drain Current , Amps
10
100us
1
1ms
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
DC
10ms
0 .1
0 .0 1
1
0
10
100
V d s , D r a in - t o - S o u r c e V o lta g e , V o lts
1000
0
25
50
75
100
TC , Case Temperature , C
125
150
Figure 1 Maximum Forward Bias Safe Operating Area
6
Id , Drain Current , Amps
5
Id , Drain Current , Amps
Figure 2 Maximum Power Dissipation vs Case Temperature
8
250us Pluse Test
Tc = 25℃
V
GS
=10V
6
V
GS
=7V
4
3
2
1
0
0
25
75
100
125
50
TC , C ase Tem perature , C
150
4
V
GS
=6V
V
GS
=5V
2
V
GS
=4V
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
20%
Figure 4 Typical Output Characteristics
0.1
10%
5%
2%
P
DM
0.01
Single pulse
t1
t2
1%
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 1 5 V0 1
CS4N65 A3R
9
Id , Drain Current , Amps
7.5
6
4.5
3
1.5
0
2
4
6
8
Vgs , Gate to Source Voltage , Volts
10
+25℃
+150℃
250us Pulse Test
V
DS
=10V
R
○
8
Isd, Reverse Drain Current , Amps
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1
Vsd , Source - Drain Voltage , Volts
1.2
+150℃
+25℃
Figure 6 Typical Transfer Characteristics
Rds(on), Drain to Source ON Resistance,
Nomalized
4
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
3.5
V
GS
=10V
3
2.5
2
0
1
2
3
Id , Drain Current , Amps
4
-50
0
50
100
Tj, Junction temperature , C
150
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 1 0
2 0 1 5 V0 1
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
