Silicon
N-Channel
Power MOSFET
R
○
HPB600R160PC-G
General Description
：
HPB600R160PC-G, the silicon N-channel Enhanced
MOSFETs, is obtained by the super junction technology which
reduces the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package type is TO-263, which accords
with the RoHS standard.
V
DSS(Tjmax)
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
Eoss@400V
650
20
209
0.12
4.0
V
A
W
Ω
uJ
Features：
l
Fast Switching
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
l
Halogen Free
Applications
：
Power switch circuit of adaptor,PC power and server.
Absolute
（Tj=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
a1
a2
Parameter
Drain-to-Source Voltage(
V
GS=
0V)
Continuous Drain Current T
C
= 25
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt ruggedness
Maximum diode communication speed
Power Dissipation(T
C
=25°C)
Operating and Storage Temperature Range
Rating
600
20
60
±30
500
15
50
500
209
–55…+150
Units
V
A
A
V
mJ
V/ns
V/ns
A/us
W
℃
I
DM
V
GSS
E
AS
a3
a4
dv/dt
dv/dt
di
f
/dt
P
D
T
J
，T
stg
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
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HPB600R160PC-G
Electrical Characteristics
（Tj=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA
V
DS
= 600V, V
GS
= 0V,
Tj= 25℃
V
DS
=480V, V
GS
= 0V,
Tj = 125℃
Rating
Min.
Typ.
Max.
Units
V
V/
℃
µA
600
--
--
--
--
--
--
0.67
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V V
DS
= 0V,
V
GS
=-30V V
DS
= 0V,
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=9A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.12
--
0.14
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 100V
f = 1.0MHz
Test Conditions
f = 1.0MHz
Rating
Min.
Typ.
Max.
Units
Ω
pF
--
--
--
--
6.9
1882
81
1.0
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
V
plateau
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Gate Plateau Voltage
I
D
=11.3A V
DD
=400V
V
GS
= 10V
I
D
=11.3A V
DD
= 400V
V
GS
= 13V R
G
=1.7Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
--
18
7.7
75
8.1
45
8.2
18
4.8
--
--
--
--
--
--
--
--
ns
nC
V
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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HPB600R160PC-G
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
I
rrm
Parameter
Continuous Source Current (Body Diode)
Tc=25℃
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
A
--
--
I
S
=10A,V
GS
=0V
I
S
=11.3A,T
j
= 25°C
--
--
--
309
4010
26
20
60
1.2
--
--
--
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
dI
F
/dt=100A/us,
V
GS
=0V
--
--
--
--
Thermal Restistance
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.60
62.5
Units
℃/W
℃/W
：Limited
by Tjmax Maximum duty cycle D=0.75
：Repetitive
rating; pulse width limited by maximum junction temperature
a3
：L=20.0mH,
Rg=25
Ω，Vdd=50V,
Start T
J
=25
℃
a4
：Identical
low side and high side switch with identical Rg
a5
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
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HPB600R160PC-G
Characteristics Curve：
R
○
Figure.1 Maximum Forward Bias Safe Operating Area
Figure.2 Maximum Power Dissipation vs Case Temperature
Figure.3 Maximum Continuous Drain Current vs Case Temperature
Figure.4 Typical Output Characteristics
Figure.5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
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HPB600R160PC-G
R
○
Figure.6 Typical Transfer Characteristics
Figure.7 Typical Body Diode Transfer Characteristics
Figure.8 Typical Drain to Source ON Resistance
vs Drain Current
Figure.9 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
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