Silicon
N-Channel
Power MOSFET
R
○
CS1N60 C4H
General Description
：
CS1N60 C4H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
600
1.0
30
8
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤10.5Ω)
l
Low Gate Charge
(Typical Data:4.7nC)
l
Low Reverse transfer capacitances
(Typical:2.9pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
I
AR
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
600
1.0
0.6
4.0
±30
20
6
1.1
5.0
30
0.24
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 5 V0 1
CS1N60 C4H
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 600V, V
GS
= 0V,
T
a
= 25℃
V
DS
=480V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
V/℃
µA
600
--
--
--
--
--
--
0.67
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=0.5A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
8
10.5
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=30V, I
D
=0.5A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
0.8
127
14.5
2.9
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=1.0A V
DD
=300V
V
GS
= 10V
I
D
=1.0A V
DD
= 300V
V
GS
= 10V R
G
= 4.7Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
6.3
5
24
15.3
4.7
0.8
2.4
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 5 V0 1
CS1N60 C4H
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=1.0A,V
GS
=0V
I
S
=1.0A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
374
735
1.0
4.0
1.5
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
4.17
62
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=2A, Start T
J
=25℃
a3
：I
SD
=1.0A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 5 V0 1
CS1N60 C4H
Characteristics Curve：
10
Pd , Power Dissipation ,Watts
35
10μs
10ms
R
○
30
25
20
15
10
5
0
0
25
50
75
100
Tc , Case Temperature , C
125
150
Id,Drian current,Amps
1
0 .1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=150℃
T
C
=25℃
Single Pulse
100ms
0 .0 1
DC
0 .0 0 1
1
10
100
V d s ,D r a in - t o - s o u r c e V o l ta g e ,V o lts
1000
Figure 1 Maximum Forward Bias Safe Operating Area
Figure 2 Maximum Power Dissipation vs Case Temperature
1.6
1.4
Id,Drain Source,Volts
1.2
1
V
GS
=8V
V
GS
=9V
V
GS
=10V
0.8
0.6
0.4
0.2
0
0
5
10
15
20
Vds,Drain Source Voltage,Volts
25
30
V
GS
=5V
V
GS
=6V
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
50%
Figure 4 Typical Output Characteristics
Thermal Impedance,Normanlized
20%
0.1
10%
5%
0.01
2%
P
DM
0.001
1%
t1
t2
0.0001
Single pulse
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.00001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
Rectangular Pulse Duration,Seconds
2 0 1 5 V0 1
CS1N60 C4H
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
R
○
Idm , Peak Current , Amps
150
−
T
C
I
=
I
25
125
1
V
GS
=10V
0.1
1.00E-05
1.00E-04
1.00E-03
1.5
Id Drain to Source Current,Amps
1.00E-02
1.00E-01
t
Pulse W idth , Seconds
Figure 6 Maximum Peak Current Capability
14
Rds(on), Drain to Source ON
Resistance , Ohms
13
12
11
10
9
8
1.00E+00
1.00E+01
1.2
V
DS
=25V
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
= 1.2A
I
D
= 0.6A
I
D
= 0.3A
0.9
0.6
0.3
0
0
2
4
6
8
Vgs,Gate to Source Voltage,Volts
10
Figure 7 Typical Transfer Characteristics
14
Rds(on),Drain to source ON
Resistance. Ohms
6
8
10
12
14
Vgs , Gate to Source Voltage
，
Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
Rds(on),Drain to Source ON
Resistance,Normalized
2
4
13
V
GS
=10V
V
GS
=10V
I
D
=250μA
12
1.5
11
1
10
0.5
9
0
0.3
0.6
0.9
Id,Drain Current,Amps
1.2
1.5
0
-100
-50
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Pag e 5 of 1 0
0
50
100
Tj,Junction Temperature,C
150
200
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 5 V0 1
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