Silicon
N-Channel
Power MOSFET
R
○
CS7N60 A4R
General Description
：
CS7N60 A4R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
600
7
100
1.0
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤1.3Ω)
l
Low Gate Charge
(Typical Data:24nC)
l
Low Reverse transfer capacitances
(Typical:5.5pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
J
= 25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25
°C
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Rating
600
7
4.4
28
±30
400
5.0
100
0.8
150，–55 to 150
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
V
GS
E
AS
a2
a3
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
dv/dt
P
D
T
J
，T
stg
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 9 V0 1
CS7N60 A4R
Electrical Characteristics
（T
J
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
=600V, V
GS
= 0V,
T
J
= 25℃
V
DS
=480V, V
GS
= 0V,
T
J
= 125℃
V
GS
=+30V
V
GS
=-30V
Rating
Min.
Typ.
Max.
Unit
s
V
V/℃
µA
µA
nA
nA
600
--
--
--
--
--
--
0.67
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=3.5A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
1.0
--
1.3
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=3.5A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
6.5
1121
96
5.5
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=7A V
DD
=480V
V
GS
= 10V
I
D
=7A V
DD
= 300V
R
G
=10Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
18
22
40
19
24
4.8
9.5
--
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 9 V0 1
CS7N60 A4R
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
I
RRM
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
I
S
=7A,T
j
= 25℃
I
S
=7A,V
GS
=0V
Test Conditions
T
C
= 25
°C
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
A
--
--
--
--
--
--
--
--
--
363
1920
10.6
7
28
1.5
--
--
--
Reverse Recovery Charge
Reverse Recovery Current
dI
F
/dt=100A/us,
V
GS
=0V
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
1.25
100
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10mH,
I
D
=9A, Start T
J
=25℃
a3
：I
SD
=7A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
a4
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
a2
a1
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 9 V0 1
CS7N60 A4R
Characteristics Curve：
100
R
○
120
PD , Power Dissipation
，Watts
Id , Drain Current , Amps
10
100us
90
1
1ms
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
10ms
60
0 .1
DC
30
0 .0 1
1
0
10
100
V d s , D r a in - t o - S o u r c e V o lta g e , V o lts
1000
0
25
50
100
75
TC , Case Temperature , C
125
150
Figure 1 Maximum Forward Bias Safe Operating Area
10.5
Id , Drain Current , Amps
Figure 2 Maximum Power Dissipation vs Case Temperature
14
V
GS
=10V
250us Pluse Test
Tc = 25℃
Id , Drain Current , Amps
7V
10.5
7
6V
5V
7
4.5V
3.5
3.5
0
0
25
75
100
125
50
TC , Case Tem perature , C
150
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 1 9 V0 1
CS7N60 A4R
13.5
Id , Drain Current , Amps
250us Pulse Test
V
DS
=20V
R
○
16
Isd, Reverse Drain Current , Amps
12
9
8
+150℃
4.5
+25℃
+150℃
4
+25℃
0
2
4
6
8
Vgs , Gate to Source Voltage , Volts
10
0
0
0.2
0.4
0.6
0.8
1
Vsd , Source - Drain Voltage , Volts
1.2
Figure 6 Typical Transfer Characteristics
Rds(on), Drain to Source ON Resistance,
Nomalized
1.8
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=3.5A
1.6
V
GS
=10V
1.4
1.2
1.0
0
2
4
6
Id , Drain Current , Amps
8
-50
0
50
100
Tj, Junction temperature , C
150
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 1 0
2 0 1 9 V0 1
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