Silicon
N-Channel
Power MOSFET
R
○
CS3N40 A4H
General Description
：
CS3N40 A4H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)TYP
400
3
30
2.8
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤3.4Ω)
l
Low Gate Charge
(Typical Data:5nC)
l
Low Reverse transfer capacitances
(Typical:4.5pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of LCD Power and adaptor.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
I
AR
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
400
3
1.8
12
±30
50
6.4
1.2
5
30
0.24
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa g e 1 of 1 0
2 0 1 5 V0 1
CS3N40 A4H
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
=400V, V
GS
= 0V,
T
a
= 25℃
V
DS
=320V, V
GS
= 0V,
T
a
= 125℃
V
DS
=0V, V
GS
= 30V
V
DS
=0V,V
GS
=-30V
Rating
Min.
Typ.
Max.
Units
V
V/℃
µA
nA
nA
400
--
--
--
0.7
--
--
--
1
10
--
--
--
--
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=1A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
2.8
3.4
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=1A
Rating
Min.
Typ.
Max.
Units
S
pF
1
--
--
--
139
21
4.5
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=3.0A V
DD
=200V
V
GS
= 10V
I
D
=3.0A V
DD
= 200V
V
GS
= 10V R
G
= 25Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
6
7
30
9
5
0.9
2.5
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa g e 2 of 1 0
2 0 1 5 V0 1
CS3N40 A4H
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=2A,V
GS
=0V
I
S
=2A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
60
139
3
12
1.5
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
4.17
100
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=3.2A, Start T
J
=25℃
a3
：I
SD
=3A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2015V01
CS3N40 A4H
Characteristics Curve：
100
R
○
40
PD , Power Dissipation
，Watts
10
Id , Drain Current , Amps
100μs
1 ms
30
1
100ms
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
20
0 .1
DC
10
0 .0 1
1
10
100
1000
V d s , D r a in - to - S o u r c e V o lta g e , V o lts
0
0
25
50
75
100
TC , Case Temperature , C
125
150
Figure 1 Maximum Forward Bias Safe Operating Area
Figure 2 Maximum Power Dissipation vs Case Temperature
4
V
GS
=15V
Id , Drain Current , Amps
3.0
Id , Drain Current , Amps
3
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
V
GS
=7V
2
V
GS
=6V
V
GS
=6.5V
V
GS
=5.5V
1.5
1
V
GS
=4.5V
0
0
25
50
75
100
TC , Case Temperature , C
125
150
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
20%
Figure 4 Typical Output Characteristics
0.1
10%
5%
2%
P
DM
0.01
Single pulse
t1
t2
1%
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2015V01
CS3N40 A4H
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
○
Idm , Peak Current , Amps
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
150
−
T
C
I
=
I
25
125
10
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
t
，
Pulse Width , Seconds
1.00E-01
1.00E+00
1.00E+01
Figure 6 Maximum Peak Current Capability
6
Id , Drain Current , Amps
Rds(on), Drain to Source ON
5.5
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
V
DS
=30V
5
4
3
2
1
0
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
=2A
4.5
I
D
=1A
I
D
=0.5A
I
D
=0.25A
-55℃
+25℃
+150℃
3.5
2
3
4
5
Vgs , Gate to Source Voltage , Volts
6
2.5
4
6
8
10
12
Vgs , Gate to Source Voltage , Volts
14
Figure 7 Typical Transfer Characteristics
6.5
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Rds(on), Drain to Source ON Resistance,
Nomalized
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1.5A
5.5
4.5
V
GS
=10V
3.5
2.5
0
2
3
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
1
4
-50
0
50
100
Tj, Junction temperature , C
150
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Page 5 of 10
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2015V01
嵌入式系统
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