Silicon N-Channel
Power MOSFET
R
○
CS8N50 A3R
General Description
：
CS8N50 A3R, the
silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
500
8
100
0.7
V
A
W
Ω
Features：
Fast Switching
Low ON Resistance
(Rdson≤0.9Ω)
Low Gate Charge
(Typical Data:24nC)
Low Reverse transfer capacitances
(Typical:7pF)
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
500
8
5
32
±30
440
5.0
100
0.8
150，–55 to 150
300
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
a2
a3
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
dv/dt
P
D
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 1 of 10
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CS8N50 A3R
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
=500V, V
GS
= 0V,
T
a
= 25℃
V
DS
=400V, V
GS
= 0V,
T
a
= 125℃
V
GS
=+30V
V
GS
=-30V
Rating
Min.
Typ.
Max.
Unit
s
V
V/℃
µA
µA
nA
nA
500
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=4A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.7
--
0.9
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=4A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
7
1136
112
7
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=8A V
DD
=400V
V
GS
= 10V
I
D
=8A V
DD
= 250V
R
G
=10Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
18
20
44
15
24
5
9
--
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 2 of 10
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CS8N50 A3R
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
I
RRM
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
I
S
=8A,T
j
= 25℃
I
S
=8A,V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
A
--
--
--
--
--
--
--
--
--
374
1830
9.8
8
32
1.5
--
--
--
Reverse Recovery Charge
Reverse Recovery Current
dI
F
/dt=100A/us,
V
GS
=0V
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.25
100
Units
℃/W
℃/W
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10mH,
I
D
=9.4A, Start T
J
=25℃
a3
：I
SD
=8A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS8N50 A3R
Characteristics Curve：
100
PD , Power Dissipation
，Watts
R
○
120
Id , Drain Current , Amps
10
100us
90
1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
1ms
10ms
60
0.1
30
DC
0.01
1
0
10
100
Vds , Drain-to-Source Voltage , Volts
1000
0
25
50
75
100
TC , Case Temperature , C
125
150
Figure 1 Maximum Forward Bias Safe Operating Area
12
Figure 2 Maximum Power Dissipation vs Case Temperature
20
250us Pluse Test
Tc = 25℃
Id , Drain Current , Amps
Id , Drain Current , Amps
15
V
GS
=10V
8
V
GS
=7V
10
V
GS
=6V
V
GS
=5V
4
5
V
GS
=4.5V
0
0
25
75
100
125
50
TC , Case Temperature , C
150
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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2 0 1 6 V0 1
CS8N50 A3R
21
Id , Drain Current , Amps
250us Pulse Test
V
DS
=20V
R
○
16
Isd, Reverse Drain Current , Amps
12
14
8
+150℃
7
+25℃
+150℃
4
+25℃
0
2
4
6
8
Vgs , Gate to Source Voltage , Volts
10
0
0
0.2
0.4
0.6
0.8
1
Vsd , Source - Drain Voltage , Volts
1.2
Figure 6 Typical Transfer Characteristics
Rds(on), Drain to Source ON Resistance,
Nomalized
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=3.5A
1.4
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
1.2
V
GS
=10V
1.0
0.8
0.6
0
2
4
6
Id , Drain Current , Amps
8
-50
0
50
100
Tj, Junction temperature , C
150
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 5 of 10
2 0 1 6 V0 1
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