CRJD390N65GC
华润微电子(重庆)有限公司
Features
• CRM(CQ) Super_Junction technology
• Much lower Ron*A performance for On-state efficiency
• Much lower FOM for fast switching efficiency
VDS
R
DS(on)_typ
I
D
Applications
• LED/LCD/PDP TV and monitor Lighting
• Solar/Renewable/UPS-Micro Inverter System
• Charger
• Power Supply
650V
0.39Ω
11A
SJMOS N-MOSFET 650V, 0.39Ω, 11A
Product Summary
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRJD390N65GC
Marking
Package
TO-252
Packing
Tape&Reel
Reel Size
N/A
Tape Width
N/A
Qty
2500pcs
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C
T
C
= 100°C
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=60mH, Rg=30Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
11
7.0
44
120
±30
74
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
650
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRJD390N65GC
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case. Max
Thermal resistance, junction – ambient. Max
Symbol
R
thJC
R
thJA
Value
1.68
73
Unit
°C/W
SJMOS N-MOSFET 650V, 0.39Ω, 11A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
650
3.5
-
-
-
4.5
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=650V,V
GS
=0V
Zero gate voltage drain current
I
DSS
-
-
Gate-source leakage current
I
GSS
-
-
10
0.3
1
-
80
nA
µA
T
C
=25°C
T
C
=150°C
V
GS
=±30V,V
DS
=0V
V
GS
=10V, I
D
=5.5A,
Drain-source on-state
resistance
Transconductance
R
DS(on)
-
-
g
fs
-
0.39
1
12
0.45
-
-
S
Ω
T
C
=25°C
T
C
=150°C
V
DS
=20V,I
D
=5.5A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
770
32
23
22
5.3
8.8
20
15
74
43
2.0
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
T
j
=25°C, V
GS
=10V,
I
D
=5.5A, V
DS
=400V,
R
g
=25Ω
nC
V
GS
=10V, V
DS
=480V,
I
D
=5.5A, f=1MHz
pF
V
GS
=0V, V
DS
=100V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRJD390N65GC
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Symbol
SJMOS N-MOSFET 650V, 0.39Ω, 11A
Value
min.
0.5
-
-
typ.
0.84
218
2.35
max.
1
-
-
Unit
V
ns
uC
Test Condition
V
GS
=0V,I
SD
=5.5A
Isd=5.5A
dI/dt=100A/us,Vds=10
0V
V
SD
t
rr
Q
rr
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRJD390N65GC
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 1. Output Characteristics (Tj=25℃)
℃
25
Fig 2. Output Characteristics (Tj=150℃)
℃
14
SJMOS N-MOSFET 650V, 0.39Ω, 11A
10V, 9V, 8V, 7V
20
15
I
D
(A)
I
D
(A)
12
10
10V, 9V, 8V, 7V,6V
5.5V
6.0V
10
8
6
5.5V
5
5.0V
4
2
5.0V
0
0
-5
V
DS
(V)
5
10
15
4.5V
V
GS
=4.0V
0
5
10
V
DS
(V)
15
20
25
V
GS
=4V
20
4.5V
25
0
-2
Fig 3: Transfer Characteristics
25
20
15
10
5
0
-5 0
1
2
3
4
5
6
7
8
9
10
Fig 4: V
TH
Vs Tj Temperature
Characteristics
5
25°C
4
3
2
1
0
0
V
GS
(V)
25
50
75
100
ID=250uA
I
D
(A)
150°C
V
TH
(V)
125
150
Temperature（
℃）
（
Fig 6: Rds(on) vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
Fig 5: Rdson Vs Ids Characteristics(Tc=25℃)
℃
600
550
R
DS(on)
(m )
500
450
400
350
300
250
200
0
2
4
6
8
10
12
14
V
GS
=10V
V
GS
=20V
R
DS(on)
_Normalized
V
GS
=10V
I
D
=5.5A
0
25
50
75
100
125
150
175
I
D
(A)
Tj - Junction Temperature (°C)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOS N-MOSFET 650V, 0.39Ω, 11A
Fig 7: BVDSS vs. Temperature
1.10
1.08
Fig 8: Rds(on) vs Gate Voltage
1200
1100
1000
900
800
700
600
500
400
I
D
=5.5A
150°C
BVdss (Nomalized)
1.06
1.04
1.02
1.00
0.98
0
25
50
75
100
125
150
175
R
DS(on)
(m )
25°C
300
200
4
5
6
7
8
9
10
Tj - Junction Temperature (°C)
V
GS
(V)
Fig 9: Body-diode Forward Characteristics
1000
Fig 10: Gate Charge Characteristics
12
10
I
S
- Diode Current(A)
V
DS
=480V
I
D
=5.5A
V
GS
(V)
100
8
6
4
2
10
1
150˚C
25˚C
0.1
0
0.3
0.6
0.9
1.2
1.5
1.8
0
0
2
4
6
8
10 12 14 16 18 20 22 24
V
SD
- Diode Forward Voltage(V)
Qg (nC)
Fig 11: Capacitance Characteristics
10000
1000
100
10
1
0
0
100
200
300
400
500
600
Fig 12: Safe Operating Area
100
V
GS
=0V
f=1MHz
C - Capacitance (PF)
Limited by
Rds(on)
Ciss
I
D
(A)
10
1ms
10ms
Coss
Crss
1
0.1
Single pulse
Tc=25˚C
0.01
1
10
100
DC
V
DS
(V)
1000
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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