CRJH1K4N70G2E
华润微电子(重庆)有限公司
Features
• CRM(CQ) Super_Junction technology
• Much lower Ron*A performance for On-state efficiency
• Much lower FOM for fast switching efficiency
VDS
R
DS(on)_typ
I
D
Applications
• LED/LCD/PDP TV and monitor Lighting
• Solar/Renewable/UPS-Micro Inverter System
• Charger
• Power Supply
700V
1.15Ω
4A
SJMOS N-MOSFET 700V, 1.15Ω, 4A
Product Summary
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRJH1K4N70G2E
Marking
Package
TO-251
Packing
Tube
Reel Size
N/A
Tape Width
N/A
Qty
70pcs
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C
T
C
= 100°C
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=60mH, Rg=30Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
4
2.7
17
50
±30
50
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
700
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRJH1K4N70G2E
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case. Max
Thermal resistance, junction – ambient. Max
Symbol
R
thJC
R
thJA
Value
2.52
139
Unit
°C/W
SJMOS N-MOSFET 700V, 1.15Ω, 4A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
BV
DSS
V
GS(th )
700
3
-
3.5
-
4
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=700V,V
GS
=0V
I
DSS
-
-
Gate-source leakage current
I
GSS
-
-
5
-
1
-
5
uA
µA
T
C
=25°C
T
C
=150°C
V
GS
=±30V,V
DS
=0V
V
GS
=10V, I
D
=1.5A,
Drain-source on-state
resistance
Transconductance
R
DS(on)
-
-
g
fs
-
1.15
2.8
2.6
1.40
-
-
S
Ω
T
C
=25°C
T
C
=150°C
V
DS
=20V,I
D
=1.5A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
255
11
5
10.2
2
4.5
11.6
17
47.7
89.4
7.9
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
T
j
=25°C, V
GS
=10V,
I
D
=1.5A, V
DS
=400V,
R
g
=25Ω
nC
V
GS
=10V, V
DS
=480V,
I
D
=1.5A, f=1MHz
pF
V
GS
=0V, V
DS
=100V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRJH1K4N70G2E
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Symbol
SJMOS N-MOSFET 700V, 1.15Ω, 4A
Value
min.
0.5
-
-
typ.
0.84
133
0.78
max.
1
-
-
Unit
V
ns
uC
Test Condition
V
GS
=0V,I
SD
=1.5A
Isd=1.5A
dI/dt=100A/us,Vds=1
00V
V
SD
t
rr
Q
rr
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRJH1K4N70G2E
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 1. Output Characteristics (Tj=25℃)
℃
8
7
6
5
I
D
(A)
4
3
2
1
0
0
5
10
V
DS
(V)
15
Fig 2. Output Characteristics (Tj=150℃)
℃
4.5
SJMOS N-MOSFET 700V, 1.15Ω, 4A
10V, 9V, 8V, 7V
4
3.5
10V, 9V, 8V, 7V,6V
5.5V
6.0V
I
D
(A)
3
2.5
2
1.5
1
0.5
0
25
0
5
10
V
DS
(V)
15
5.0V
5.5V
5.0V
4.5V
20
4.5V
V
GS
=4.0V
20
25
V
GS
=4V
Fig 3: Transfer Characteristics
8
7
6
Fig 4: V
TH
Vs Tj Temperature
Characteristics
5
25°C
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
ID=250uA
I
D
(A)
4
3
2
1
0
150°C
V
TH
(V)
5
0
25
50
75
100
125
150
V
GS
(V)
Fig 5: Rdson Vs Ids Characteristics(Tc=25℃)
℃
4000
Temperature（
℃）
（
Fig 6: Rds(on) vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
3000
2500
2000
V
GS
=10V
V
GS
=20V
1500
1000
0
2
4
6
8
R
DS(on)
_Normalized
3500
V
GS
=10V
I
D
=1.5A
R
DS(on)
(m )
0
25
50
75
100
125
150
175
I
D
(A)
Tj - Junction Temperature (°C)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRJH1K4N70G2E
华润微电子(重庆)有限公司
SJMOS N-MOSFET 700V, 1.15Ω, 4A
Fig 7: BVDSS vs. Temperature
1.12
Fig 8: Rds(on) vs Gate Voltage
4700
1.10
1.08
4200
3700
I
D
=5.5A
=1.5A
150°C
BVdss (Nomalized)
1.06
1.04
1.02
1.00
0.98
0
25
50
75
100
125
150
175
R
DS(on)
(m )
3200
2700
2200
1700
1200
700
200
4
5
25°C
6
7
8
9
10
Tj - Junction Temperature (°C)
V
GS
(V)
Fig 9: Body-diode Forward Characteristics
100
Fig 10: Gate Charge Characteristics
12
10
I
S
- Diode Current(A)
V
DS
=480V
I
D
=1.5A
V
GS
(V)
10
8
6
4
2
1
150˚C
25˚C
0.1
0
0.3
0.6
0.9
1.2
1.5
1.8
0
0
2
4
6
8
10
12
V
SD
- Diode Forward Voltage(V)
Qg (nC)
Fig 11: Capacitance Characteristics
10000
1000
100
10
1
0
0
100
200
300
400
500
600
Fig 12: Safe Operating Area
100
V
GS
=0V
f=1MHz
C - Capacitance (PF)
Ciss
I
D
(A)
10
Limited by
Rds(on)
10us
100us
Coss
Crss
1
1ms
10ms
0.1
DC
Single pulse
Tc=25˚C
0.01
1
10
100
1000
V
DS
(V)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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