Silicon N-Channel Power MOSFET
CS3N06 AE-G
General Description
：
CS3N06 AE-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOP8,
which accords with the Halogen Free standard.
V
DSS
I
D
P
D
(T
a
=25℃)
R
DS(ON)
R
○
60
3
2
75
V
A
W
mΩ
Features：
Fast Switching
Low ON Resistance (
Rdson≤100mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
A
= 25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
A
= 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
60
3
2.2
12
±20
11.2
2
0.016
150，–55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
V
GS
E
AS
P
D
T
J
，T
stg
a2
Single Pulse Avalanche Energy
Power Dissipation
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 1 of 10
2 0 2 0 V0 1
CS3N06 AE-G
Electrical Characteristics
（T
J
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
= 60V, V
GS
= 0V,
T
J
= 25℃
V
DS
=48V, V
GS
= 0V,
T
J
= 125℃
Rating
Min.
Typ.
Max.
Units
V
60
--
--
--
--
--
--
--
--
--
--
1
Drain to Source Leakage Current
µA
100
100
-100
nA
nA
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=2A
Test Conditions
V
GS
=10V,I
D
=3A
Rating
Min.
Typ.
Max.
Units
mΩ
mΩ
V
--
--
1.2
75
101
1.6
100
125
2
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=15V
f = 1.0MHz
Test Conditions
f=1MHz
Rating
Min.
Typ.
Max.
Units
Ω
pF
--
--
--
--
2.9
297.6
25.0
17.2
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=3A V
DD
=30V
V
GS
= 10V
V
GS
=10V，R
G
=2Ω
V
DD
=30V，I
D
=3A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
6.2
2.3
15
2.1
6.8
1.1
1.8
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 2 of 10
2 0 2 0 V0 1
CS3N06 AE-G
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test
Conditions
T
C
= 25℃
I
S
=3A,V
GS
=0V
di/dt=100A/us
IF=3A
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
29.1
22.7
Max.
3
12
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JA
Parameter
Junction-to-Ambient
Max.
62.5
Units
℃/W
Notes：
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,
I
D
=6.7A, Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 3 of 10
2 0 2 0 V0 1
CS3N06 AE-G
Characteristics Curve
：
2.5
10
R
○
10μ
s
2
P
D
,Power Dissipation,W
100μ
s
I
D
,Drain Current,A
1
1ms
1.5
Operation in This Area
is Limited by R
DS(on)
10ms
1
0.1
DC
SINGLE PULSE
T
C
=25℃
T
J
=150℃
0.5
0.01
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
0
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
Figure 1
3.5
. Maximum Safe Operating Area
18
16
Figure 2. Maximum Power Dissipation vs
Case Temperature
3
14
2.5
Note:
1.250us Pulse Test
2.Tc=25℃
Vgs=5.0V~10V
I
D
,Drain Current,A
2
I
D
,Drain Current[A]
12
Vgs=4.5V
10
8
1.5
Vgs=4V
6
4
1
Vgs=3.5V
0.5
2
Vgs=3V
0
0
25
50
75
100
125
150
0
1
2
3
4
T
C
,Case Temperature,℃
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
Figure 4. Typical output Characteristics
D=1
0.5
10
ZθJA,Thermal Response[℃/W]
0.2
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
Notes:
1.Duty Cycle, D=t1/t2
2.T
JM
= P
DM
*R
θJA
+ T
A
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Ambient
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 4 of 10
2 0 2 0 V0 1
CS3N06 AE-G
R
○
10
Note:
1.V
DS
=5V
2.250us Pulse Test
10
Is,Source Current[A]
1
I
D
,Drain Current[A]
1
Tj=150℃
Tj=25℃
0.1
0.1
Tj=150℃
Tj=25℃
0.01
0.001
0
1
2
3
4
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
V
SD
，Source-to-Drain
Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
2.2
140
R
DS(on),
Drain-to-Source On Resistance,mΩ
PULSED TEST
T
j
= 25℃
120
2
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
V
GS
= 4.5V
100
1.8
1.6
1.4
1.2
V
GS
= 4.5V
I
D
= 2A
V
GS
= 10V
I
D
= 3A
80
V
GS
= 10V
60
1
0.8
0.6
40
20
0
1
2
3
4
5
6
I
D
,Drain Current,A
0.4
-50
-25
0
25
50
75
100
125
150
T
J
,Junction Temperature(℃)
Figure 8. Drain-to-Source On Resistance vs
Drain Current
Figure 9. Normalized On Resistance vs
Junction Temperature
1.3
1.1
1.2
V
GS
= V
DS
I
D
= 250μA
1.08
1.2
1.1
1
0.9
0.8
0.7
0.6
B
VDSS
,(Normalized)
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
1.15
1.06
1.04
1.1
1.02
V
GS(th)
,(Normalized)
Threshold Voltage
1.05
1
0.98
0.96
1
0.94
0.95
0.92
0.5
0.4
-50
-25
0
25
50
75
100
125
150
T
J
,Junction Temperature(℃)
0.9
0.9
-50
-100 -25 -50 0
0
25
50
50
75
100 100 150
125
200
150
T
T
J
,Junction Temperature(℃)
J
,Junction Temperature(℃)
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 5 of 10
2 0 2 0 V0 1
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