Silicon
N-Channel
Power
MOSFET
R
○
CS10N06 A4
General Description
：
CS10N06 A4, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-252, which accords with the RoHS standard.
V
DSS
I
D
P
D
R
DS(ON)Typ
60
10
14.6
75
V
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤105mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
J
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25
°C
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Rating
60
10
6.3
40
±20
11
14.6
0.12
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a2
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 8 V0 1
CS10N06 A4
Electrical Characteristics
（T
J
= 25
℃
unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=60V, V
GS
= 0V,
T
J
= 25℃
V
DS
=48V, V
GS
= 0V,
T
J
= 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
60
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=2A
Test Conditions
V
GS
=10V,I
D
=3A
Rating
Min.
--
--
0.8
Typ.
75
98
--
Max.
105
125
2.0
Units
mΩ
mΩ
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
FS
R
g
C
iss
C
oss
C
rss
Parameter
Forward tranconductance
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=30V
f = 1.0MHz
Test Conditions
V
DS
=15V,I
D
=2A
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
--
Typ.
4.7
2.9
282
24
17
Max.
--
--
--
--
--
Units
S
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
(
V
GS
=4.5V
)
Q
g
(
V
GS
=10V
)
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
V
GS
=10V
V
DD
=30V,I
D
=3A
V
GS
=10V,Rg=1Ω
V
DD
=30V,I
D
=3A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
--
Typ.
6.2
3.1
18.5
2.6
4.3
7.8
1.0
2.6
Max.
--
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 8 V0 1
CS10N06 A4
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=3A,V
GS
=0V
di/dt=100A/us
IF=3A
Test
Conditions
T
C
= 25
°C
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
12.6
8.3
Max.
10
40
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
8.5
100
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=1mH,Ias=4.7A
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2 0 1 8 V0 1
CS10N06 A4
Characteristics Curve：
R
○
Figure 1. Maximum Safe Operating Area
Figure 2. Maximum Power Dissipation vs Case Temperature
Figure 3. Maximum Continuous Drain Current vs
Case Temperature
Figure 4. Typical output Characteristics
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2 0 1 8 V0 1
CS10N06 A4
`
R
○
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer Characteristics
Figure 8. Drain-to-Source On Resistance vs Drain Current
Figure 9. Normalized On Resistance vs Junction Temperature
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
Page 5 of 10
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 8 V0 1
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
