Silicon N-Channel Power MOSFET
CS7N03 AE-1
General Description
：
CS7N03 AE-1, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is SOP-8, which accords with the RoHS standard.
V
DSS
I
D
P
D
R
DS(ON)Typ
30
7
2
15
R
○
V
A
W
mΩ
Features：
Fast Switching
Low ON Resistance
(Rdson≤20
mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
A
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
，T
stg
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
A
= 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
30
7
5.6
28
±
20
150.1
2
0.016
150，–55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
a2
Avalanche Energy
Power Dissipation
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P ag e 1 of 10
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CS7N03 AE-1
Electrical Characteristics
（T
j
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=30V, V
GS
= 0V,
Tj = 25℃
V
DS
=24V, V
GS
= 0V,
Tj = 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
30
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=5A
Test Conditions
V
GS
=10V,I
D
=7A
Rating
Min.
--
--
1.8
Typ.
15
29
2.3
Max.
20
40
2.8
Units
mΩ
mΩ
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=15V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
3
577.86
153.18
71.3
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=7A V
DD
=15V
V
GS
= 10V
V
GS
=10V，R
G
=3Ω
V
DD
=15V，I
D
=7A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
8.9
2.7
20.7
3.8
11.7
2.1
3.1
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS7N03 AE-1
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
R
○
Test
Conditions
T
C
= 25℃
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
34.8
26.1
Max.
7
28
1.2
--
--
Units
A
A
V
ns
nC
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=7A,V
GS
=0V
di/dt=100A/us
IF=7A
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JA
a1
a2
Parameter
Junction-to-Ambient
Max.
62.5
Units
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,Ias=24.5A
Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS7N03 AE-1
Characteristics Curve：
100
R
○
2.5
10μ
s
2
10
100μ
s
P
D
,Power Dissipation,W
100
I
D
,Drain Current,A
1ms
1.5
1
10ms
Operation in This Area
is Limited by R
DS(on)
1
0.1
DC
SINGLE PULSE
T
C
=25℃
T
J
=150℃
0.5
0.01
0.1
1
10
0
0
25
50
75
100
125
150
V
DS
,Drain-to-Source Voltage,V
T
C
,Case Temperature,℃
Figure 1
8
. Maximum Safe Operating Area
40
Figure 2. Maximum Power Dissipation vs
Case Temperature
Vgs=6.0V~10V
7
6
35
30
I
D
,Drain Current,A
I
D
,Drain Current[A]
Vgs=5V
25
20
15
10
Vgs=4V
5
4
3
2
1
0
25
50
75
100
125
150
Vgs=4.5V
Note:
1.250us Pulse Test
2.Tc=25℃
5
Vgs=3.5V
0
0
0.5
1
1.5
2
2.5
T
C
,Case Temperature,℃
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
D=1
0.5
Figure 4. Typical output Characteristics
ZθJA,Thermal Response[℃/W]
10
0.2
0.1
0.05
0.02
0.01
1
0.1
Single Pulse
0.01
Notes:
1.Duty Cycle, D=t1/t2
2.T
JM
= P
DM
*R
θJA
+ T
A
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.001
0.000001
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Ambient
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS7N03 AE-1
10
10
Note:
1.V
DS
=5V
2.250us Pulse Test
R
○
1
I
D
,Drain Current[A]
Is,Source Current[A]
Tj=150℃
0.1
Tj=25℃
Tj=150℃
1
Tj=25℃
0.01
0.001
0
1
2
3
4
5
6
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
V
SD
，Source-to-Drain
Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
1.8
40
R
DS(on),
Drain-to-Source On Resistance,mΩ
35
30
PULSED TEST
T
j
= 25℃
1.6
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
V
GS
= 4.5V
25
20
15
1.4
V
GS
= 10V
I
D
= 7A
1.2
1
V
GS
= 4.5V
I
D
= 5A
V
GS
= 10V
10
5
0
0.8
0.6
0.4
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
-50
-25
0
25
50
75
100
125
150
I
D
,Drain Current,A
T
J
,Junction Temperature(℃)
Figure 8. Drain-to-Source On Resistance vs
Drain Current
Figure 9. Normalized On Resistance vs
Junction Temperature
1.3
1.2
1.1
V
GS
= V
DS
I
D
= 250μA
1.1
1.2
1.08
1
0.9
0.8
B
VDSS
,(Normalized)
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
1.15
1.06
V
GS(th)
,(Normalized)
Threshold Voltage
1.04
1.1
1.02
1.05
1
0.98
0.96
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100
125
150
1
0.94
0.95
0.92
0.9
0.9
-50
-100 -25 -50 0
0
25
50
50
75
100 100 150
125
200
150
T
T
J
,Junction Temperature(℃)
J
,Junction Temperature(℃)
T
J
,Junction Temperature(℃)
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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