Silicon
N-Channel
Power
MOSFET
R
○
HGD09N06A-G
General Description
：
HGD09N06A-G the silicon N-channel Enhanced
,
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy.
This device is suitable for use as a load switch and PWM
applications. The package form is TO-252, which accords with the
RoHS standard.
V
D S S
I
D
P
D
R
D S ( O N)Typ VGS=10V
60
55
59. 5
8. 1
V
A
W
mΩ
Features：
Fast Switching
Low ON Resistance
(
Rds on
≤ 9 . 8
mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications
：
Pow er s witch circuit of adaptor and c harger.
E-c igarette,Electric Tool
Abs olute
（T
j
= 25℃ unles s otherwise s pecified）
Symbol
V
D S S
I
D
I
DM
E
A S
P
D
T
J
，
T
stg
a2
Parameter
D rain-to-Source Voltage
Cont inuous Drain Current T
C
= 25 °
C
Cont inuous Drain Current T
C
= 100 °
C
P uls ed Drain Current
G at e-to-Source Voltage
Rating
60
55
34. 8
220
±20
145
59. 5
0. 47
150， –55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
V
G S
a2
Single P ulse Avalanche Energy
P ow er D issipation T
C
= 25 °
C
D erating F actor above 25°
C
O p erating Junction and Storage Temperature Range
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 1 of 7
2019V01
HGD09N06A-G
Electrical Characteristics
（
T
j
= 25℃ unless otherwise s pecified）
：
OFF Characteristics
Symbol
V
D S S
I
D SS
I
G S S ( F)
I
G S S ( R)
Parameter
D rain to Source Breakdown Voltage
D rain to Source Leakage Current
G at e to Source Forward Leakage
G at e to Source Reverse Leakage
R
○
Tes t Conditions
V
G S
= 0V, I
D
=250 µA
V
D S
= 6 0V, V
G S
= 0V,
T j = 25℃
V
D S
= 48V, V
GS
= 0V,
T j = 1 25℃
V
G S
= 20V
V
G S
= -2 0V
Rating
M in.
Ty p .
M ax.
Units
V
µA
nA
nA
60
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
D S ( O N)
V
G S ( TH )
Parameter
D rain-to-Source On-Resistance
V
G S
= 4.5V,I
D
=19 A
Tes t Conditions
V
G S
= 10V,I
D
=19A
Rating
Min.
Typ.
8. 1
11
1. 0
1. 75
Max.
9. 8
13. 5
2. 5
Units
mΩ
mΩ
V
G at e Threshold Voltage
V
D S
= V
GS
, I
D
= 250µA
Puls e width tp≤300µ
s,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
i s s
C
o s s
C
r s s
Parameter
G at e resistance
Inp ut Capacitance
O utput Capacitance
Reverse Transfer Capacitance
V
G S
= 0V V
D S
=3 0V
f = 1. 0MHz
Tes t Conditions
V
G S
= 0V, V
D S
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
1. 5
1226
348
9. 97
Max.
--
--
--
--
Units
Ω
pF
Re s istive Switching Characteristics
Symbol
t
d ( O N)
tr
t
d ( O FF )
t
f
Q
g
Q
g s
Q
g d
Parameter
T urn-on D elay Time
Ris e Time
T urn-Off Delay Time
F all Time
Tot al G ate Charge
I
D
= 1 4A
V
D D
=30V
V
G S
= 10V， R
G
=3Ω
V
D D
= 30 V，I
D
=14A
Tes t Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
11. 9
5. 5
30. 6
4. 8
18
3. 2
2. 95
Max.
--
--
--
--
--
--
--
Units
ns
G at e to Source Charge
G at e to D rain (“Miller”)Charge
V
G S
= 10V
nC
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 2 of 7
2019V01
HGD09N06A-G
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
S D
trr
Qrr
Parameter
Cont inuous Source Current (Body Diode)
T
C
= 25 °
C
M aximum P ulsed Current (Body Diode)
D iode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 1 9A,V
GS
=0V
di / dt=100A/us
IF = 1 4A
Test
Conditions
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
42
52. 5
Max.
55
220
1. 2
--
--
Units
A
A
V
ns
nC
Puls e width tp≤300µ
s,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
Parameter
J unction-to-Case
J unction-to-Ambient
Max.
2. 1
75
Units
℃
/W
℃
/W
：Calculat
ed continuous current bas ed on maximum allow able junction temperature. Bond w ire current limit
is 100A by source bonding technology. N ote that current limitations aris ing from heating of the device
leads may occur with some lead mounting arrangements.
a2
：
L=0.5mH, I
D
= 24.1A, Start T
J
=25℃
a3
：
Recommend soldering t emperature defined by IPC/JEDEC J-STD 020
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 3 of 10
2019V01
HGD09N06A-G
Characteristics Curve：
1000
70
60
100
10μ
s
R
○
P
D
,Power Dissipation,W
50
I
D
,Drain Current,A
10
Operation in This
Area
is Limited by R
DS(on)
100μ
s
40
30
1ms
1
10ms
DC
20
SINGLE PULSE
T
C
=25℃
T
J
=150℃
0.1
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
10
0
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
Figure 1
. Maximum Safe Operating Area
35
Figure 2. Maximum Power Dissipation vs
Case Temperature
60
50
30
Vgs=4.5V~10V
Vgs=3.6V
Vgs=3.4V
25
I
D
,Drain Current,A
40
Vgs=3.2V
30
I
D
,Drain Current[A]
20
Vgs=3.0V
15
20
10
10
5
Note:
1.250us Pulse Test
2.Tc=25℃
0
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
0
0
0.5
1
1.5
2
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
10
Figure 4. Typical output Characteristics
D=1
ZθJC,Thermal Response[℃/W]
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 4 of 10
2019V01
HGD09N06A-G
70
Note:
1.V
DS
=10V
2.250us Pulse Test
10
100
R
○
60
50
I
D
,Drain Current[A]
40
Is,Source Current[A]
1
Tj=150℃
30
Tj=25℃
0.1
20
Tj=150℃
Tj=25℃
10
0
1
2
3
4
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
V
SD
，Source-to-Drain
Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
1.8
20
R
DS(on),
Drain-to-Source On Resistance,mΩ
18
16
PULSED TEST
T
j
= 25℃
1.6
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
PULSED TEST
I
D
= 19A
V
GS
= 10V
1.4
14
12
V
GS
= 4.5V
1.2
V
GS
= 10V
10
8
1
V
GS
= 10V
6
4
0
5
10
I
D
,Drain Current,A
15
20
0.8
0.6
-50
0
50
100
150
T
J
,Junction Temperature(℃)
Figure 8. Drain-to-Source On Resistance vs
Drain Current
Figure 9. Normalized On Resistance vs
Junction Temperature
W UXI C H INA RES O URC ES H UAJ ING MIC RO ELEC TRO NIC S C O . , LTD.
Page 5 of 10
2019V01
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