CRST090N12N,CRSS087N12N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS3 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS3 N-MOSFET 120V, 7.5mΩ, 110A
Product Summary
V
DS
R
DS(on)
I
D
120V
7.5mΩ
110A
100% Avalanche Tested
CRST090N12N
CRSS087N12N
Package Marking and Ordering Information
Part #
CRST090N12N
CRSS087N12N
Marking
Package
TO-220
TO-263
Packing
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
50pcs
50pcs
-
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
※.
Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 23A.
Symbol
V
DS
Value
120
110
120
72
440
132
±20
227
-55...+150
Unit
V
I
D
A
I
D pulse
E
AS(Note 1)
V
GS
P
tot
T
j
,
T
stg
A
mJ
V
W
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST090N12N,CRSS087N12N
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.55
60
Unit
°C/W
SkyMOS3 N-MOSFET 120V, 7.5mΩ, 110A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
120
2
-
3
-
4
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=120V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
I
DSS
-
-
I
GSS
-
-
-
±10
1
100
100
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=±20V,V
DS
=0V
V
GS
=10V, I
D
=60A
R
DS(on)
-
-
g
fs
-
7.5
7.2
79.2
9.0
8.7
-
mΩ
S
TO-220
TO-263
V
DS
=5V,I
D
=60A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
3491.7
425
41
47
20.6
9.7
17.9
95.9
28.7
92.6
1.8
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
Vds=60V
Id=60A
Rg=2.7Ω
Vgs=10V;
nC
V
GS
=10V, V
DS
=60V,
I
D
=60A, f=1MHz
pF
V
GS
=0V, V
DS
=60V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST090N12N,CRSS087N12N
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
SkyMOS3 N-MOSFET 120V, 7.5mΩ, 110A
Value
min.
-
-
-
typ.
0.95
72.6
119.4
max.
1.4
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=60A
V
SD
t
rr
Q
rr
ISD=60A, VGS=0V,
dIF/dt=100A/us;
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST090N12N,CRSS087N12N
华润微电子(重庆)有限公司
SkyMOS3 N-MOSFET 120V, 7.5mΩ, 110A
Typical Performance Characteristics
300
280
260
240
220
200
180
Fig 1: Output Characteristics
10V
9.0V
8.0V
Fig 2: Transfer Characteristics
100
V
DS
=5V
80
I
D
(A)
160
140
120
100
80
60
40
20
0
0
1
2
3
6.5V
I
D
(A)
7.0V
60
40
5.5V
V
GS
=4.5V
4
5
20
150°C
25°C
0
0
1
2
V
DS
(V)
V
GS
(V)
3
4
5
6
7
9.0
8.7
8.4
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
30
28
26
24
I
D
=60A
R
DS(on)
(m )
8.1
7.8
7.5
7.2
6.9
6.6
6.3
6.0
10
20
30
40
50
60
70
80
90 100 110 120
R
DS(on)
(m )
22
20
18
16
14
12
10
8
6
5
6
7
8
9
10
150°C
V
GS
=10V
25°C
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
2.2
2.0
10000
Fig 6: Capacitance Characteristics
R
DS(on)
_Normalized
1.8
1.6
1.4
1.2
1.0
0.8
0.6
25
50
75
100
125
150
C - Capacitance (PF)
V
GS
=10V
I
D
=60A
Ciss
1000
Coss
100
Crss
V
GS
=0V
f=1MHz
10
0
30
60
90
120
Tj - Junction Temperature (°C)
(°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST090N12N,CRSS087N12N
华润微电子(重庆)有限公司
SkyMOS3 N-MOSFET 120V, 7.5mΩ, 110A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
8
V
DS
=60V
I
D
=60A
100
V
GS
(V)
6
10
4
1
150˚C
25˚C
2
0.1
0
0
10
20
30
40
50
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Qg (nC)
Fig 9: Power Dissipation
250
Fig 10: Drain Current Derating
140
120
200
100
P
tot
(W)
150
I
D
(A)
80
60
40
100
50
20
0
0
25
50
75
100
125
150
0
0
25
50
75
V
GS
≥1
0V
100
125
150
175
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
100
Limited by
Rds(on)
10us
100us
1ms
I
D
(A)
10
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
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