CRTD10DN10L
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced Trench MOS technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Trench N-MOSFET 100V, 67mΩ, 15A
Product Summary
V
DS
R
DS(on) typ.
I
D
100V
67mΩ
15A
100% DVDS Tested
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRTD10DN10L
Marking
CRTD10DN10L
Package
TO-252
Packing
Reel
Reel Size
N/A
Tape Width
N/A
Qty
2500pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.1mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
sold
I
D
15
40
9
60
7
±20
40
-55...+150
260
A
mJ
V
W
°C
°C
A
Symbol
V
DS
Value
100
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTD10DN10L
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
3.12
105
Unit
°C/W
Trench N-MOSFET 100V, 67mΩ, 15A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BV
DSS
V
GS(th )
100
1.4
-
2
-
2.6
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=100V,V
GS
=0V
Zero gate voltage drain
current
Gate-source leakage
current
I
DSS
-
-
I
GSS
-
0.01
-
±10
1
50
±100
nA
µA
T
j
=25°C
T
j
=150°C
VGS=±20V,VDS=0V
V
GS
=10V, I
D
=8A,
Drain-source on-state
resistance
R
DS(on)
-
67
150
-
Transconductance
g
fs
-
74
22
100
180
110
-
S
mΩ
Tj=25°C
Tj=150°C
V
GS
=4.5V, I
D
=5A,
V
DS
=10V,I
D
=8A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
596
36
29
15
3.0
4.5
8.5
21
20
30
2.3
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
V
GS
=10V, V
DD
=50V,
R
G_ext
=2.7Ω
nC
V
GS
=10V, V
DS
=50V,
I
D
=8A, f=1MHz
pF
V
GS
=0V, V
DS
=50V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTD10DN10L
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Continuous
Forward Current
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Trench N-MOSFET 100V, 67mΩ, 15A
Value
min.
-
typ.
0.9
max.
1.3
15
-
-
28
29
-
-
Unit
V
A
ns
Test Condition
V
GS
=0V,I
SD
=8A
T
C
= 25°C
V
SD
I
S
t
rr
Q
rr
I
F
=8A, dI/dt=100A/µs
nC
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTD10DN10L
华润微电子(重庆)有限公司
Trench N-MOSFET 100V, 67mΩ, 15A
Typical Performance Characteristics
Fig 1: Output Characteristics
30
30
Fig 2: Transfer Characteristics
V
DS
=5V
24
10V
24
6V
4.0V
I
D
(A)
12
I
D
(A)
18
18
12
V
GS
=3.5V
6
6
150°C
25°C
3.0V
0
0
2
4
6
8
10
0
2.0
3.0
4.0
5.0
6.0
7.0
V
DS
(V)
V
GS
(V)
140
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
200
I
D
=8A
120
170
150°C
R
DS(on)
(mΩ)
R
DS(on)
(mΩ)
100
140
80
V
GS
=4.5V
110
60
V
GS
=10V
80
25°C
40
0
4
8
12
16
20
50
3
4
5
6
7
8
9
10
I
D
(A)
V
GS
(V)
Fig 5: Rds(on) vs. Temperature
3.0
Fig 6: Capacitance Characteristics
1000
C - Capacitance (PF)
2.5
V
GS
=10V
I
D
=8A
R
DS(on)
_Normalized
Ciss
2.0
1.5
100
Coss
Crss
1.0
0.5
10
-50
-25
0
25
50
75
100
125
150
175
0
V
GS
=0V
f=1MHz
20
40
0.0
60
80
100
Tj - Junction Temperature (°C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTD10DN10L
华润微电子(重庆)有限公司
Trench N-MOSFET 100V, 67mΩ, 15A
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
10
1000
8
I
S
- Diode Current(A)
100
V
GS
(V)
6
V
DS
=50V
I
D
=8A
10
150˚C
4
25˚C
1
2
0
0
3
6
9
12
15
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg (nC)
V
SD
- Diode Forward Voltage(V)
Fig 9: Power Dissipation
45
40
35
30
Fig 10: Drain Current Derating
16
14
12
P
tot
(W)
25
20
15
10
5
0
0
25
50
75
100
125
150
I
D
(A)
10
8
6
4
2
0
0
25
50
75
100
125
150
175
V
GS
≥10V
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
100
1us
Limited by
Rds(on)
10
10us
I
D
(A)
100us
1ms
10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1
1
10
V
DS
(V)
100
©China Resources Microelectronics (Chongqing) Limited
Page 5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
